2N6659 [SEME-LAB]
N-CHANNEL ENHANCEMENT MODE MOS TRANSISTOR; N沟道增强型MOS晶体管
| 型号： | 2N6659 |
| 厂家： | 
SEME LAB |
| 描述： | N-CHANNEL ENHANCEMENT MODE MOS TRANSISTOR |
| 文件： | 总2页 (文件大小：22K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2N6659
MECHANICAL DATA
Dimensions in mm (inches)
N–CHANNEL
ENHANCEMENT MODE
MOS TRANSISTOR
8.89 (0.35)
9.40 (0.37)
7.75 (0.305)
8.51 (0.335)
4.19 (0.165)
4.95 (0.195)
0.89
(0.035)
max.
FEATURES
12.70
(0.500)
min.
7.75 (0.305)
8.51 (0.335)
dia.
• Switching Regulators
• Converters
5.08 (0.200)
typ.
• Motor Drivers
2.54
2
(0.100)
1
3
0.66 (0.026)
1.14 (0.045)
0.71 (0.028)
0.86 (0.034)
45˚
TO–39 METAL PACKAGE
Underside View
PIN 1 – Source
PIN 2 – Gate
PIN 3 – Drain
CASE – Drain
ABSOLUTE MAXIMUM RATINGS (T
= 25°C unless otherwise stated)
CASE
V
V
Drain – Source Voltage
Gate – Source Voltage
Drain Current
35V
±20V
DS
GS
I
I
I
@ T
= 25°C
1.4A
D
CASE
Drain Current
@ T
= 100°C
1A
D
CASE
Pulsed Drain Current *
Power Dissipation
Power Dissipation
3A
DM
P
P
@ T
@ T
= 25°C
6.25W
2.5W
D
D
CASE
= 100°C
CASE
T
T
T
Operating Junction Temperature Range
–55 to 150°C
–55 to 150°C
300°C
j
Storage Temperature Range
stg
L
1
Lead Temperature ( / ” from case for 10 sec.)
16
* Pulse width limited by maximum junction temperature.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
Prelim. 4/00
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
2N6659
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise stated)
CASE
Parameter
Test Conditions
Min.
Typ.
Max. Unit
STATIC CHARACTERISTICS
V
V
Gate – Source Breakdown Voltage
Gate Threshold Voltage
V
V
V
V
V
V
= 0V
I = 10 A
35
70
(BR)DSS
GS
DS
GS
DS
DS
DS
D
V
= V
I = 1mA
0.8
1.6
2
GS(th)
GS
D
= ±15V
= 0V
±100
nA
I
Gate – Body Leakage Current
GSS
T
= 125°C
±500
CASE
= 90V
= 72V
V
V
= 0V
10
GS
GS
I
I
Zero Gate Voltage Drain Current
On–State Drain Current
= 0V
= 125°C
A
DSS
500
T
CASE
V
V
V
= 15V
= 5V
V = 10V
GS
1.5
1.8
1.8
A
D(on)*
DS
GS
GS
I = 0.3A
5
D
R
Drain – Source On Resistance
= 10V
1.3
1.8
3.6
1.5
DS(on)*
I = 1A
T
= 125°C
CASE
2.6
D
V
V
= 5V
I = 0.3A
0.54
1.3
GS
GS
D
V
Drain – Source On Voltage
= 10V
1.8
3.6
V
DS(on)*
I = 1A
T
= 125°C
CASE
2.6
D
g
g
Forward Transconductance
V
V
= 10V
= 10V
I = 0.5A
170
350
1100
ms
s
FS*
DS
DS
D
Common Source Output Conductance
I = 0.1A
D
OS*
DYNAMIC CHARACTERISTICS
Small Signal Drain – Source
On Resistance
V
= 10V
I = 1A
D
GS
R
1.3
1.8
DS(on)
f = 1kHz
C
C
C
C
Drain – Source Capacitance
Input Capacitance
30
35
28
2
40
50
40
10
ds
V
V
= 24V
= 0V
DS
iss
oss
rss
pF
ns
GS
Output Capacitance
f = 1MHz
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
V
= 25V
V
= 10V
GEN
DD
t
t
Turn–On Time
8
9
10
10
ON
R = 23
R = 25
G
L
Turn–Off Time
OFF
I = 1A
D
* Pulse Test: t
80 s ,
1%
p
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Prelim. 4/00
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