2N5868 [SAVANTIC]
Silicon PNP Power Transistors; 硅PNP功率晶体管
| 型号： | 2N5868 |
| 厂家： | 
Savantic, Inc. |
| 描述： | Silicon PNP Power Transistors |
| 文件： | 总3页 (文件大小：111K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2N5867 2N5868
DESCRIPTION
·With TO-3 package
·Low collector saturation voltage
APPLICATIONS
·For medium-speed switching and
amplifier applications
PINNING
PIN
1
DESCRIPTION
Base
2
Emitter
Fig.1 simplified outline (TO-3) and symbol
3
Collector
Absolute maximum ratings(Ta=ꢀ )
SYMBOL
PARAMETER
CONDITIONS
VALUE
-60
UNIT
2N5867
2N5868
2N5867
2N5868
VCBO
Collector-base voltage
Open emitter
V
-80
-60
VCEO
Collector-emitter voltage
Open base
V
-80
VEBO
IC
Emitter-base voltage
Collector current
Open collector
-5
V
A
W
ꢀ
-5
PD
Tj
Total Power Dissipation
Junction temperature
Storage temperature
TC=25ꢀ
87.5
150
-65~200
Tstg
ꢀ
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE
UNIT
Rth j-c
Thermal resistance junction to case
1.17
ꢀ/W
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2N5867 2N5868
CHARACTERISTICS
Tj=25ꢀ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
-60
-80
TYP.
MAX
UNIT
2N5867
2N5868
Collector-emitter
sustaining voltage
VCEO(SUS)
IC=-0.1A ;IB=0
V
VCEsat
VBEsat
ICBO
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
IC=-5A;IB=-1A
-1.0
-1.5
-1.0
V
V
IC=-5A; IB=-1A
VCB=ratedVCBO; IB=0
VCE=-30V; IB=0
mA
2N5867
Collector cut-off current
2N5868
ICEO
-2.0
mA
mA
VCE=-40V; IB=0
IEBO
hFE
fT
Emitter cut-off current
DC current gain
VEB=-5V; IC=0
-1.0
100
IC=-1.5A ; VCE=-4V
IC=-0.5A ; VCE=-10V;f=1MHz
20
4
Trainsistion frequency
MHz
2
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2N5867 2N5868
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.10mm)
3
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