2N5869 [ISC]
Silicon NPN Power Transistors; 硅NPN功率晶体管
| 型号： | 2N5869 |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总3页 (文件大小：119K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2N5869 2N5870
DESCRIPTION
·With TO-3 package
·Low collector saturation voltage
APPLICATIONS
·For medium-speed switching and
amplifier applications
PINNING
PIN
DESCRIPTION
1
Base
2
3
Emitter
Fig.1 simplified outline (TO-3) and symbol
Collector
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
CONDITIONS
VALU
60
UNIT
2N5869
2N5870
2N5869
2N5870
VCBO
Collector-base voltage
Open emitter
V
80
60
VCEO
Collector-emitter oltage
Open base
V
80
VEBO
IC
Emitter-base voltage
Collector current
Open collector
5
V
A
5
PD
Tj
Total Power Dissipation
Junction temperature
Storage temperature
TC=25℃
87.5
150
-65~200
W
℃
℃
Tstg
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE
UNIT
Rth j-c
Thermal resistance junction to case
1.17
℃/W
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2N5869 2N5870
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
60
TYP.
MAX
UNIT
2N5869
2N5870
Collector-emitter
sustaining voltage
VCEO(SUS)
IC=0.1A ;IB=0
V
80
VCEsat
VBEsat
ICBO
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
IC=5A;IB=1A
1.0
1.5
1.0
V
V
IC=5A; IB=1A
VCB=ratedVCBO; IB=0
VCE=30V; IB=0
mA
2N5869
ICEO
Collector cut-off current
2.0
mA
mA
2N5870
VCE=40V; IB=0
IEBO
hFE
fT
Emitter cut-off current
DC current gain
VEB=5V; IC=0
1.0
IC=1.5A ; VCE=4V
IC=0.5A ; VCE=10V;f=1MHz
20
4
100
Trainsistion frequency
MHz
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2N5869 2N5870
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.10mm)
3
相关型号：
2N5871E3
Power Bipolar Transistor, 7A I(C), 60V V(BR)CEO, PNP, Silicon, TO-3, Metal, 2 Pin,
MICROSEMI
©2020 ICPDF网 联系我们和版权申明