2N5427 [SAVANTIC]
Silicon NPN Power Transistors; 硅NPN功率晶体管
| 型号： | 2N5427 |
| 厂家： | 
Savantic, Inc. |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总3页 (文件大小：116K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2N5427 2N5429
DESCRIPTION
·With TO-66 package
·Excellent safe operating area
·Low collector saturation voltage
APPLICATIONS
·For switching and wide-band
amplifier applications.
PINNING(see Fig.2)
PIN
1
DESCRIPTION
Base
2
Emitter
Fig.1 simplified outline (TO-66) and symbol
3
Collector
Absolute maximum ratings(Ta=ꢀ )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
2N5427
2N5429
2N5427
2N5429
80
100
80
VCBO
Collector-base voltage
Open emitter
V
VCEO
Collector-emitter voltage
Open base
V
100
6
VEBO
IC
Emitter-base voltage
Collector current
Open collector
V
A
A
W
ꢀ
7
IB
Base current
1
PD
Tj
Total power dissipation
Junction temperature
Storage temperature
TC=25ꢀ
40
200
-65~200
Tstg
ꢀ
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE
UNIT
Rth j-c
Thermal resistance junction to case
4.37
ꢀ/W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2N5427 2N5429
CHARACTERISTICS
Tj=25ꢀ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
80
TYP.
MAX
UNIT
2N5427
2N5429
Collector-emitter
sustaining voltage
VCEO(SUS)
IC=50mA ;IB=0
V
100
VCEsat-1
VCEsat-2
VBE sat-1
VBE sat-2
ICBO
Collector-emitter saturation voltage IC=2A; IB=0.2A
Collector-emitter saturation voltage IC=7A ;IB=0.7A
0.7
1.2
1.2
2.0
0.1
V
V
Base-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
IC=2A; IB=0.2A
V
IC=7A ;IB=0.7A
V
VCB=Rated VCBO; IE=0
mA
VCE= 75V; VBE(off)=-1.5V
TC=150ꢀ
0.1
1.0
2N5427
Collector
cut-off current
ICEX
mA
mA
VCE= 90V; VBE(off)=-1.5V
TC=150ꢀ
0.1
1.0
2N5429
IEBO
hFE-1
hFE-2
hFE-3
fT
Emitter cut-off current
DC current gain
VEB=6V; IC=0
0.1
IC=0.5A ; VCE=2V
IC=2A ; VCE=2V
30
30
20
20
DC current gain
120
DC current gain
IC=5A ; VCE=2V
Transition frequency
IC=0.5A ; VCE=10V;f=10MHz
MHz
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2N5427 2N5429
PACKAGE OUTLINE
Fig.2 outline dimensions
3
相关型号：
2N5427LEADFREE
Power Bipolar Transistor, 7A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-66, Metal, 2 Pin, TO-66, 2 PIN
CENTRAL
2N5428
Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-66, Metal, 2 Pin,
APITECH
2N5428LEADFREE
Power Bipolar Transistor, 7A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-66, Metal, 2 Pin, TO-66, 2 PIN
CENTRAL
©2020 ICPDF网 联系我们和版权申明