ENA1457A [SANYO]
General-Purpose Switching Device Applications; 通用开关设备的应用
| 型号： | ENA1457A |
| 厂家： | 
SANYO SEMICON DEVICE |
| 描述： | General-Purpose Switching Device Applications |
| 文件： | 总7页 (文件大小：465K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Ordering number : ENA1457A
SANYO Sem iconductors
DATA S HEET
P-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
ATP301
Features
•
•
ON-resistance R (on)=57m (typ.)
10V drive
Input capacitance Ciss=4000pF (typ.)
Halogen free compliance
Ω
DS
•
•
Specifications
at Ta=25°C
Absolute Maximum Ratings
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Symbol
Conditions
Ratings
Unit
V
V
--100
±20
--28
--112
70
DSS
V
V
GSS
I
A
D
Drain Current (Pulse)
I
PW 10 s, duty cycle 1%
A
≤
μ
≤
DP
Allowable Power Dissipation
Channel Temperature
P
Tc=25 C
W
°C
°C
mJ
A
°
D
Tch
150
Storage Temperature
Tstg
--55 to +150
Avalanche Energy (Single Pulse) *1
Avalanche Current *2
E
54
AS
I
--28
AV
Note : 1 V =--30V, L=100 H, I =--28A
*
μ
DD
2 L 100 H, Single pulse
AV
*
≤
μ
Package Dimensions
unit : mm (typ)
Product & Package Information
• Package
: ATPAK
7057-001
• JEITA, JEDEC
: -
• Minimum Packing Quantity : 3,000 pcs./reel
ATP301-TL-H
1.5
6.5
4.6
2.6
Packing Type: TL
Marking
0.4
0.4
4
ATP301
LOT No.
TL
Electrical Connection
2,4
2
0.55
1
3
0.8
0.6
1 : Gate
2 : Drain
3 : Source
4 : Drain
0.4
2.3
2.3
1
SANYO : ATPAK
3
http://semicon.sanyo.com/en/network
62712 TKIM/42209QA MS IM TC-00001941
No.A1457-1/7
ATP301
at Ta=25°C
Electrical Characteristics
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
--100
max
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
V
I
=-- 1mA, V =0V
V
μA
μA
V
(BR)DSS
D
GS
=-- 100V, V =0V
I
I
V
V
V
V
-- 1
DSS
DS
GS
DS
DS
GS
=±16V, V =0V
DS
±10
GSS
V
(off)
GS
=-- 10V, I =-- 1mA
--2.0
--3.5
D
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
| yfs |
(on)
=-- 10V, I =--14A
32
S
D
R
I
=-- 14A, V =-- 10V
D GS
57
4000
270
150
32
75
mΩ
pF
pF
pF
ns
DS
Ciss
Output Capacitance
Coss
Crss
V
=--20V, f=1MHz
DS
Reverse Transfer Capacitance
Turn-ON Delay Time
t
t
t
t
(on)
d
r
Rise Time
130
330
190
73
ns
See specified Test Circuit.
Turn-OFF Delay Time
(off)
ns
d
f
Fall Time
ns
Total Gate Charge
Qg
nC
nC
nC
V
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Qgs
Qgd
V
=--60V, V =--10V, I =--28A
GS
16
DS
D
14
V
I =--28A, V =0V
GS
--1.0
--1.5
SD
S
Switching Time Test Circuit
Avalanche Resistance Test Circuit
V = --60V
DD
V
IN
0V
--10V
L
≥50Ω
RG
I
= --14A
D
V
IN
R =4.3Ω
L
D
V
OUT
PW=10μs
D.C.≤1%
ATP301
0V
--10V
V
DD
50Ω
G
ATP301
P. G
50Ω
S
Ordering Information
Device
Package
ATPAK
Shipping
memo
Pb Free and Halogen Free
ATP301-TL-H
3,000pcs./reel
No.A1457-2/7
ATP301
I
D
-- V
DS
I
-- V (off)
D GS
--60
--50
--40
--30
--20
--60
--50
--40
--30
--20
V
= --10V
Tc=25°C
DS
--10
0
--10
0
0
--0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0 --4.5 --5.0
IT14592
0
--1
--2
--3
--4
--5
--6
IT14593
Drain-to-Source Voltage, V
DS
-- V
Cutoff Voltage, V (off) -- V
GS
R
(on) -- V
R
(on) -- Tc
DS
GS
DS
160
140
120
100
80
200
180
160
140
120
100
80
Single pulse
Single pulse
I = --14A
D
Tc=75°C
60
25°C
60
--25°C
40
40
20
0
20
0
--50
--25
0
25
50
75
100
125
150
--2
--3
--4
--5
--6
--7
--8
--9
--10
Gate-to-Source Voltage, V
-- V
IT14594
Case Temperature, Tc -- °C
IT14595
GS
| yfs | -- I
I
-- V
D
S SD
--100
100
7
5
V
= --10V
V
=0V
DS
GS
7
Single pulse
3
2
5
--10
3
2
7
5
3
2
--1.0
7
5
10
7
5
3
2
--0.1
7
5
3
2
3
2
--0.01
7
5
1.0
3
2
7
5
--0.001
2
3
5
7
2
3
5
7
2
3
5
0
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
IT14597
--0.1
--1.0
--10
Diode Forward Voltage, V
SD
-- V
Drain Current, I -- A
IT14596
D
SW Time -- I
Ciss, Coss, Crss -- V
D
DS
1000
10000
f=1MHz
V
V
= --60V
= --10V
DD
GS
7
5
7
5
3
2
3
2
t
f
1000
100
7
5
7
5
3
2
t (on)
d
3
2
100
10
--0.1
7
2
3
5
7
2
3
5
7
2
3
5
0
--5
--10
--15
--20
--25
--30
IT14599
--1.0
--10
Drain Current, I -- A
IT14598
Drain-to-Source Voltage, V -- V
DS
D
No.A1457-3/7
ATP301
A S O
V
GS
-- Qg
--10
--9
--8
--7
--6
--5
--4
--3
--2
3
2
I
= --112A
= --28A
V
= --60V
PW≤10μs
DP
DS
= --28A
--100
I
D
7
5
3
2
I
D
--10
7
5
3
2
--1.0
Operation in
this area is
limited by R (on).
7
5
3
2
DS
--0.1
7
5
3
2
--1
0
Tc=25°C
Single pulse
--0.01
2
3
5
7
2
3
5
7
2
3
5
7
2
0
10
20
30
40
50
60
70
80
--0.1
--1.0
--10
--100
IT14601
Total Gate Charge, Qg -- nC
IT14600
Drain-to-Source Voltage, V
-- V
DS
P
-- Tc
E
-- Ta
D
AS
120
80
70
60
50
40
30
20
100
80
60
40
20
0
10
0
0
20
40
60
80
100
120
140
160
0
25
50
75
100
125
150
175
IT14603
IT14602
Ambient Temperature, Ta -- °C
Case Temperature, Tc -- °C
No.A1457-4/7
ATP301
Taping Specification
ATP301-TL-H
No.A1457-5/7
ATP301
Outline Drawing
Land Pattern Example
ATP301-TL-H
Mass (g) Unit
Unit: mm
0.266
mm
* For reference
6.5
1.5
2.3
2.3
No.A1457-6/7
ATP301
Note on usage : Since the ATP301 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment. The products mentioned herein
shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life,
aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal
system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten
human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they
grant any guarantee thereof. If you should intend to use our products for new introduction or other application
different from current conditions on the usage of automotive device, communication device, office equipment,
industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.)
prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be
solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer's
products or equipment.
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating
condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
Co.,Ltd. products described or contained herein.
Regarding monolithic semiconductors, if you should intend to use this IC continuously under high temperature,
high current, high voltage, or drastic temperature change, even if it is used within the range of absolute
maximum ratings or operating conditions, there is a possibility of decrease reliability. Please contact us for a
confirmation.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures
or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give
rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment,
adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but
are not limited to protective circuits and error prevention circuits for safe design, redundant design, and
structural design.
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are
controlled under any of applicable local export control laws and regulations, such products may require the
export license from the authorities concerned in accordance with the above law.
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mechanical, including photocopying and recording, or any information storage or retrieval system, or
otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Upon using the technical information or products described herein, neither warranty nor license shall be
granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any
third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third
party's intellectual property rights which has resulted from the use of the technical information and products
mentioned above.
This catalog provides information as of June, 2012. Specifications and information herein are subject
to change without notice.
PS No.A1457-7/7
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