ENA0537 [SANYO]
N-Channel Silicon MOSFET General-Purpose Switching Device Applications; N沟道MOSFET硅通用开关设备的应用
| 型号： | ENA0537 |
| 厂家： | 
SANYO SEMICON DEVICE |
| 描述： | N-Channel Silicon MOSFET General-Purpose Switching Device Applications |
| 文件： | 总6页 (文件大小：74K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Ordering number : ENA0537
SANYO Sem iconductors
DATA S HEET
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
EFC4601
Features
• 2.5V drive.
• Best suited for LiB charging and discharging switch.
• Common-drain type.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Source-to-Source Voltage
Gate-to-Source Voltage
Source Current (DC)
Source Current (Pulse)
Total Dissipation
Symbol
Conditions
Ratings
Unit
V
V
24
±12
6
SSS
V
V
GSS
I
S
A
I
PW≤10μs, duty cycle≤1%
40
A
SP
P
T
When mounted on ceramic substrate (5000mm2✕0.8mm)
1.6
150
W
°C
°C
Channel Temperature
Storage Temperature
Tch
Tstg
--55 to +150
Electrical Characteristics at Ta=25°C
Ratings
typ
Unit
Parameter
Symbol
Conditions
min
max
Source-to-Source Breakdown Voltage
Zero-Gate Voltage Source Current
Gate-to-Source Leakage Current
Cutoff Voltage
V
I =1mA, V =0V
GS
Test Circuit 1
Test Circuit 1
Test Circuit 2
Test Circuit 3
Test Circuit 4
Test Circuit 5
Test Circuit 5
Test Circuit 5
Test Circuit 5
Test Circuit 5
24
V
(BR)SSS
S
I
V
=20V, V =0V
GS
1
μA
μA
V
SSS
SS
I
V
V
V
=±8V, V =0V
SS
±10
GSS
GS
V
(off)
GS
=10V, I =1mA
0.5
5
1.3
SS
SS
S
Forward Transfer Admittance
yfs
⏐
=10V, I =3A
8.5
S
⏐
S
R
R
R
R
R
(on)1
I =3A, V =4.5V
S GS
23.5
25
34
36
38
42
50
44
47
49
55
70
mΩ
mΩ
mΩ
mΩ
mΩ
SS
SS
SS
SS
SS
(on)2
(on)3
(on)4
(on)5
I =3A, V =4.0V
S GS
Static Source-to-Source On-State Resistance
I =3A, V =3.7V
S GS
27
I =3A, V =3.1V
S GS
27
I =3A, V =2.5V
S GS
30
Marking : FA
Continued on next page.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer
equipment.
's products or
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
32608PE TI IM TC-00001280
No. A0537-1/6
EFC4601
Continued from preceding page.
Ratings
typ
Unit
Parameter
Symbol
Conditions
min
max
Input Capacitance
Ciss
Coss
Crss
V
V
V
=10V, f=1MHz
=10V, f=1MHz
=10V, f=1MHz
Test Circuit 8
Test Circuit 8
Test Circuit 8
Test Circuit 7
Test Circuit 7
Test Circuit 7
Test Circuit 7
950
pF
pF
pF
ns
ns
ns
ns
nC
V
SS
SS
SS
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
170
120
20
t (on)
d
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
t
r
185
54
Turn-OFF Delay Time
Fall Time
t (off)
d
t
f
200
8.1
1
Total Gate Charge
Qg
V
SS
=10V, V =10V, I =6A
GS
S
Forward Source-to-Source Voltage
V
I =6A, V =0V
S GS
Test Circuit 6
1.2
F(S-S)
Package Dimensions
unit : mm (typ)
Electrical Connection
7056-001
1
1.81
4
3
2
1
2
1 : Source1
2 : Gate1
3
3 : Gate2
4 : Source2
0.65
4
Top view
1 : Source1
2 : Gate1
1
2
3 : Gate2
4 : Source2
4
3
0.37
SANYO : EFCP1818-4CA-055
No. A0537-2/6
EFC4601
Test Circuits are example of measuring FET1 side
Test Circuit 1
Test Circuit 2
V
/ I
I
(+) / (--)
SSS SSS
GSS
S2
S2
G2
G1
G2
G1
S1
S2
S1
S2
IT11565
IT11566
Test Circuit 3
(off)
Test Circuit 4
⏐yfs⏐
V
GS
G2
G2
G1
10V 1mA
G1
S1
S2
S1
S2
IT11567
IT11568
Test Circuit 5
(on)
Test Circuit 6
V (S-S)
F
R
SS
4.5V
G2
G2
G1
G1
S1
S1
IT11569
IT11570
Test Circuit 7
t (on), t , t (off), t
f
d
r d
V
=10V
DD
R
L
V
OUT
S1
V
IN
G1
G2
PW=10μs
D.C.≤1%
* Note: Connect the mesurement terminal reversely
if you want to measure the FET2 side.
S2
IT11571
No. A0537-3/6
EFC4601
Test Circuit 8
Ciss
Coss
S2
S2
G2
G2
Capacitance
bridge
G1
G1
Capacitance
bridge
S1
S1
IT11972
IT11973
Crss
S2
G2
G1
Capacitance
bridge
S1
* Note: Connect the mesurement terminal reversely
if you want to measure the FET2 side.
IT11974
I
-- V
SS
I
-- V
GS
S
S
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
6
5
4
3
V =10V
SS
2
1
0
0.5
0
0
0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50
0
0.5
1.0
1.5
2.0
IT11919
Source-to-Source Voltage, V
SS
-- V
IT11976
Gate-to-Source Voltage, V
GS
-- V
R
SS
(on) -- V
R (on) -- Ta
SS
GS
100
90
80
70
60
50
40
30
20
100
90
80
70
60
50
40
30
20
Ta=25°C
I =1.5A
S
3A
10
0
10
0
0
2
4
6
8
10
IT11920
--50
0
50
100
150
200
IT11921
Gate-to-Source Voltage, V
GS
-- V
Ambient Temperature, Ta -- °C
No. A0537-4/6
EFC4601
⏐
yfs⏐ -- I
I
-- V (S-S)
F
S
S
3
2
10
7
V =10V
SS
V =0V
GS
5
3
2
1.0
7
5
10
3
2
7
5
0.1
7
5
3
2
3
2
0.01
7
5
3
2
1.0
0.001
7
0.1
2
3
5
7
2
3
5
7
0
0.2
0.4
0.6
0.8
1.0
1.2
IT11923
1.0
10
Source Current, I -- A
S
SW Time -- I
IT11922
Forward Source-to-Source Voltage, V (S-S) -- V
F
Ciss, Coss, Crss -- V
S
SS
3
2
5
f=1MHz
3
2
Ciss
1000
7
5
100
7
5
3
2
3
2
t (on)
d
100
7
10
0.1
2
3
5
7
2
3
5
7
0
1
2
3
4
5
6
7
8
1.0
10
IT11928
Source Current, I -- A
IT11924
Source-to-Source Voltage, V
-- V
S
SS
A S O
V
-- Qg
GS
4.0
3.5
3.0
2.5
2.0
1.5
1.0
7
5
I
=40A
PW≤10μs
V
I =6A
S
=10V
SP
SS
3
2
10
7
5
I =6A
S
3
2
1.0
7
5
3
2
Operation in this area
is limited by R (on).
SS
0.1
7
5
Ta=25°C
Single pulse
3
2
0.5
0
When mounted on ceramic substrate (5000mm2✕0.8mm)
0.01
0.01
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
0
1
2
3
4
5
6
7
8
9
10
0.1
1.0
10
Source-to-Source Voltage, V
SS
-- V
IT12017
Total Gate Charge, Qg -- nC
IT11929
P
-- Ta
T
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
When mounted on ceramic substrate
(5000mm2✕0.8mm)
0.2
0
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta -- °C
IT12018
No. A0537-5/6
EFC4601
Note on usage : Since the EFC4601 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise
to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt
safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not
limited to protective circuits and error prevention circuits for safe design, redundant design, and structural
design.
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are
controlled under any of applicable local export control laws and regulations, such products may require the
export license from the authorities concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise,
without the prior written consent of SANYO Semiconductor Co.,Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
Upon using the technical information or products described herein, neither warranty nor license shall be granted
with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third
party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s
intellectual property rights which has resulted from the use of the technical information and products mentioned
above.
This catalog provides information as of March, 2008. Specifications and information herein are subject
to change without notice.
PS No. A0537-6/6
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