2SK3505-01 [SANYO]
N CHANNEL SILICON POWER MOSFET; N沟道硅功率MOSFET
| 型号： | 2SK3505-01 |
| 厂家： | 
SANYO SEMICON DEVICE |
| 描述： | N CHANNEL SILICON POWER MOSFET |
| 文件： | 总4页 (文件大小：108K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
FUJI POWER MOSFET
2SK3505-01MR
Super FAP-G Series
N-CHANNEL SILICON POWER MOSFET
Outline Drawings
TO-220F
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DCconverters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Symbol
VDS
Ratings
500
Unit
V
Drain-source voltage
Continuous drain current
Pulsed drain current
Gate-source voltage
Repetitive or non-repetitive
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
Peak Diode Recovery dV/dt
Max. power dissipation
Equivalent circuit schematic
A
ID
±14
±56
±30
14
A
ID(puls]
VGS
V
Drain(D)
A
IAR *2
mJ
kV/µs
kV/µs
W
EAS*1
dVDS/dt *4
dV/dt *3
PD Ta=25
Tc=25
Tch
242
20
5
Gate(G)
°C
°C
2.1
Source(S)
60
+150
-55 to +150
Operating and storage
temperature range
°C
°C
Tstg
<
<
<
<
*3 IF -ID, -di/dt=50A/µs, Vcc BVDSS, Tch 150°C
*1 L=2.27mH, Vcc=50V *2 Tch 150°C
=
=
=
=
<
*4 VDS 500V
=
Electrical characteristics (Tc =25°C unless otherwise specified)
Min.
Typ.
Max. Units
Symbol
V(BR)DSS
VGS(th)
Test Conditions
Item
µ
ID= 250 A
VGS=0V
Drain-source breakdown voltaget
Gate threshold voltage
500
V
µ
ID= 250 A
VDS=VGS
3.0
5.0
25
V
Tch=25°C
µA
VDS=500V VGS=0V
Zero gate voltage drain current
IDSS
Tch=125°C
250
100
VDS=400V VGS=0V
VGS=±30V VDS=0V
IGSS
RDS(on)
gfs
10
nA
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
ID=7A VGS=10V
0.35
0.46
Ω
7
14
1600
160
7
S
ID=7A VDS=25V
VDS=25V
Ciss
2400
240
pF
Coss
Crss
td(on)
tr
VGS=0V
Output capacitance
f=1MHz
10.5
Reverse transfer capacitance
Turn-on time ton
ns
VCC=300V ID=7A
18
27
24
50
15
50
19
16
16
VGS=10V
35
td(off)
tf
Turn-off time toff
RGS=10 Ω
8
33
QG
VCC=250V
ID=14A
nC
Total Gate Charge
12.5
10.5
QGS
QGD
IAV
Gate-Source Charge
Gate-Drain Charge
VGS=10V
14
L=2.27mH Tch=25°C
A
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
1.00
1.50
VSD
trr
Qrr
IF=14A VGS=0V Tch=25°C
IF=14A VGS=0V
V
0.65
6.0
µs
µC
-di/dt=100A/µs
Tch=25°C
Thermalcharacteristics
Item
Min.
Typ.
Max. Units
Symbol
Test Conditions
Rth(ch-c)
channel to case
2.08
°C/W
Thermal resistance
Rth(ch-a)
channel to ambient
62.0
°C/W
1
2SK3505-01MR
FUJI POWER MOSFET
Characteristics
Allowable Power Dissipation
PD=f(Tc)
Maximum Avalanche Energy vs. starting Tch
E(AV)=f(starting Tch):Vcc=50V,I(AV)<=14A
80
70
60
50
40
30
20
10
0
300
250
200
150
100
50
0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
starting Tch [°C]
Tc [°C]
Typical Transfer Characteristic
ID=f(VGS):80µs Pulse test, VDS=25V,Tch=25°C
Typical Output Characteristics
ID=f(VDS):80µs Pulse test,Tch=25°C
30
20V
10V
8V
28
26
24
22
20
18
16
14
12
10
8
7.5V
7.0V
10
1
VGS=6.5V
6
4
0.1
2
0
0
2
4
6
8
10 12 14 16 18 20 22
VDS [V]
0
1
2
3
4
5
6
7
8
9
10
VGS[V]
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80µs Pulse test, Tch=25°C
Typical Transconductance
gfs=f(ID):80µs Pulse test, VDS=25V,Tch=25°C
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
100
7.5V
VGS=6.5V
7.0V
10
8V
10V
20V
1
0.1
0.1
1
10
0
5
10
15
20
25
30
ID [A]
ID [A]
2
2SK3505-01MR
FUJI POWER MOSFET
Gate Threshold Voltage vs. Tch
Drain-Source On-state Resistance
VGS(th)=f(Tch):VDS=VGS,ID=1mA
RDS(on)=f(Tch):ID=7A,VGS=10V
7.0
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
max.
typ.
max.
min.
typ.
-50
-25
0
25
50
75
100 125 150
-50
-25
0
25
50
75
100
125
150
Tch [°C]
Tch [°C]
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
Typical Gate Charge Characteristics
VGS=f(Qg):ID=14A, Tch=25°C
24
22
20
18
16
14
12
10
8
10n
1n
Vcc= 100V
Ciss
250V
400V
100p
10p
1p
Coss
Crss
6
4
2
0
10-1
100
101
102
103
0
10
20
30
40
50
60
70
80
VDS [V]
Qg [nC]
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80µs Pulse test,Tch=25°C
Typical Switching Characteristics vs. ID
t=f(ID):Vcc=300V, VGS=10V, RG=10Ω
100
10
1
102
101
100
tr
td(off)
td(on)
tf
0.1
100
101
0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00
VSD [V]
ID [A]
3
2SK3505-01MR
FUJI POWER MOSFET
Transient Thermal impedance
Zth(ch-c)=f(t) parameter:D=t/T
101
100
10-1
10-2
0.5
0.2
0.1
t
0.05
t
D=
T
0.02
T
0.01
0
10-5
10-4
10-3
10-2
10-1
100
101
t [s]
Maximum Avalanche Current Pulsewidth
IAV=f(tAV):starting Tch=25°C. Vcc=50V
102
101
100
10-1
10-2
Single Pulse
10-8
10-7
10-6
10-5
10-4
10-3
10-2
tAV [sec]
4
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