2SJ684 [SANYO]
P-Channel Silicon MOSFET General-Purpose Switching Device Applications; P沟道MOSFET硅通用开关设备的应用
| 型号： | 2SJ684 |
| 厂家： | 
SANYO SEMICON DEVICE |
| 描述： | P-Channel Silicon MOSFET General-Purpose Switching Device Applications |
| 文件： | 总4页 (文件大小：58K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Ordering number : ENA1058
SANYO Sem iconductors
DATA S HEET
P-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
2SJ684
Features
• Low ON-resistance.
•
Load S/W Applicaions.
•
Avalanche resistance guarantee.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Symbol
Conditions
Ratings
Unit
V
V
--100
±20
--45
--180
50
DSS
GSS
Gate-to-Source Voltage
Drain Current (DC)
V
V
I
D
A
Drain Current (Pulse)
I
PW≤10μs, duty cycle≤1%
Tc=25°C
A
DP
Allowable Power Dissipation
Channel Temperature
P
W
°C
°C
mJ
A
D
Tch
150
Storage Temperature
Tstg
--55 to +150
Avalanche Energy (Single Pulse) *1
Avalanche Current *2
E
70
AS
I
--45
AV
Note : *1 V =--30V, L=50μH, I =-- 45A
DD
AV
*2 L≤50μH, Single pulse
Electrical Characteristics at Ta=25°C
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
--100
max
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Marking : J684
V
I
=--1mA, V =0V
D GS
V
(BR)DSS
I
V
V
=--100V, V =0V
GS
--1
μA
μA
DSS
DS
I
= ±16V, V =0V
DS
±10
GSS
GS
Continued on next page.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer
equipment.
's products or
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
22708QA TI IM TC-00001246 No. A1058-1/4
2SJ684
Continued from preceding page.
Ratings
typ
Parameter
Symbol
Conditions
=--10V, I =--1mA
Unit
min
--1.2
32
max
--2.6
Cutoff Voltage
V (off)
GS
V
V
V
S
DS
D
Forward Transfer Admittance
yfs
⏐
=--10V, I =--23A
53
⏐
DS
D
R
(on)1
(on)2
I
=--23A, V =--10V
GS
18.5
22
24
31
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
DS
D
D
Static Drain-to-Source On-State Resistance
R
DS
I
=--23A, V =--4V
GS
Input Capacitance
Ciss
V
V
V
=--20V, f=1MHz
=--20V, f=1MHz
=--20V, f=1MHz
14500
700
550
110
DS
DS
DS
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Coss
Crss
t (on)
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
d
t
r
270
1020
400
270
40
Turn-OFF Delay Time
Fall Time
t (off)
d
t
f
Total Gate Charge
Qg
V
V
V
=--50V, V =--10V, I =--45A
GS
DS
DS
DS
D
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Qgs
Qgd
=--50V, V =--10V, I =--45A
GS
D
=--50V, V =--10V, I =--45A
GS
60
D
V
I =--45A, V =0V
S GS
--0.9
--1.5
SD
Package Dimensions
unit : mm (typ)
7002-001
8.2
7.8
6.2
0.6
3
1
2
0.3
0.6
1.0
2.54
1.0
2.54
5.08
1 : Gate
2 : Source
3 : Drain
7.8
10.0
6.0
SANYO : ZP
Switching Time Test Circuit
Avalanche Resistance Test Circuit
V
= --50V
V
DD
IN
L
≥50Ω
RG
0V
--10V
I
= --23A
D
V
IN
R =2.2Ω
L
2SJ684
D
V
OUT
0V
--10V
PW=10μs
D.C.≤1%
V
50Ω
DD
G
2SJ684
P.G
50Ω
S
No. A1058-2/4
2SJ684
I
-- V
I
-- V
D GS
D
DS
--90
--80
--70
--60
--50
--40
--30
--20
--90
--80
--70
--60
--50
--40
--30
--20
Tc=25°C
Single pulse
V
= --10V
DS
Single pulse
--10
0
--10
0
0
--0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 --1.8 --2.0
0
--0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0 --4.5
IT13309
Drain-to-Source Voltage, V
-- V
IT13308
Gate-to-Source Voltage, V -- V
GS
DS
R
(on) -- V
R
(on) -- Tc
DS
GS
DS
60
50
40
30
20
50
45
40
35
30
25
20
15
10
I = --23A
Single pulse
Single pulse
D
10
0
5
0
0
--1
--2
--3
--4
--5
--6
--7
--8
--9
--10
--50
--25
0
25
50
75
100
125
150
IT13310
Case Temperature, Tc -- °C
IT13311
Gate-to-Source Voltage, V
GS
-- V
⏐yfs⏐ -- I
I
-- V
D
S
SD
3
2
2
V
=0V
V
DS
= --10V
GS
--100
Single pulse
Single pulse
7
5
3
2
100
7
--10
5
7
5
3
2
3
2
--1.0
7
5
3
2
10
7
5
--0.1
7
5
3
2
3
2
--0.01
1.0
--0.1
2
3
5
7
2
3
5
7
2
3
5 7
--100
0
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
IT13313
--1.0
--10
IT13312
Diode Forward Voltage, V -- V
SD
Ciss, Coss, Crss -- V
Drain Current, I -- A
D
SW Time -- I
DS
D
3
2
5
V
V
= --50V
= --10V
f=1MHz
DD
GS
3
2
Ciss
1000
10000
7
5
7
5
t
f
3
2
3
2
1000
t (on)
d
100
7
5
7
5
--0.1
3
2
3
5
7
2
3
5
7
--10
2
3
5
7
0
--5
--10
--15
--20
--25
--30
IT13315
--1.0
IT13314
Drain-to-Source Voltage, V
DS
-- V
Drain Current, I -- A
D
No. A1058-3/4
2SJ684
A S O
V
-- Qg
GS
5
--10
--9
--8
--7
--6
--5
--4
--3
--2
V
= --100V
3
2
DS
I
= --180A
≤10μs
DP
I = --45A
D
--100
7
5
I = --45A
D
3
2
--10
7
5
Operation in this area
is limited by R (on).
3
2
DS
--1.0
7
5
3
2
--1
0
Tc=25
°C
Single pulse
--0.1
--0.1
0
50
100
150
200
250
300
IT13316
2
3
5
7
2
3
5
7
2
3
5
7
2
--1.0
--10
--100
IT13317
Total Gate Charge, Qg -- nC
Drain-to-Source Voltage, V
-- V
DS
P
-- Ta
E
-- Ta
D
AS
120
60
50
40
30
20
100
80
60
40
10
0
20
0
0
25
50
75
100
125
150
175
0
20
40
60
80
100
120
140
160
IT13307
Ambient Temperature, Ta -- °C
IT10478
Ambient Temperature, Ta -- °C
Note on usage : Since the 2SJ684 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise
to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt
safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not
limited to protective circuits and error prevention circuits for safe design, redundant design, and structural
design.
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are
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export license from the authorities concerned in accordance with the above law.
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without the prior written consent of SANYO Semiconductor Co.,Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
Upon using the technical information or products described herein, neither warranty nor license shall be granted
with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third
party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s
intellectual property rights which has resulted from the use of the technical information and products mentioned
above.
This catalog provides information as of February, 2008. Specifications and information herein are subject
to change without notice.
PS No. A1058-4/4
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