2SJ687-ZK-E1-AY [NEC]
MOS FIELD EFFECT TRANSISTOR; MOS场效应
| 型号： | 2SJ687-ZK-E1-AY |
| 厂家： | 
NEC |
| 描述： | MOS FIELD EFFECT TRANSISTOR |
| 文件： | 总8页 (文件大小：161K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ687
SWITCHING
P-CHANNEL POWER MOSFET
DESCRIPTION
The 2SJ687 is P-channel MOSFET device and a excellent switch that can be driven by a low power-supply voltage.
FEATURES
• Low on-state resistance
RDS(on)1 = 7.0 mΩ MAX. (VGS = −4.5 V, ID = −10 A)
RDS(on)2 = 9.0 mΩ MAX. (VGS = −3.0 V, ID = −10 A)
RDS(on)3 = 20 mΩ MAX. (VGS = −2.5 V, ID = −10 A)
• 2.5 V drive available
• Avalanche capability ratings
ORDERING INFORMATION
PART NUMBER
LEAD PLATING
Pure Sn (Tin)
PACKING
PACKAGE
2SJ687-ZK-E1-AY Note
2SJ687-ZK-E2-AY Note
TO-252 (MP-3ZK)
0.27 g TYP.
Tape 2500 p/reel
Note Pb-free (This product does not contain Pb in external electrode.)
(TO-252)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
VDSS
VGSS
ID(DC)
ID(pulse)
PT1
−20
m12
V
V
m20
A
m60
A
Total Power Dissipation (TC = 25°C)
Total Power Dissipation (TA = 25°C)
Channel Temperature
36
W
W
°C
°C
A
PT2
1.0
Tch
150
Storage Temperature
Tstg
−55 to +150
−20
Single Avalanche Current Note2
Single Avalanche Energy Note2
IAS
EAS
40
mJ
Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, VDD = −10 V, RG = 25 Ω, VGS = −12 → 0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D18719EJ2V0DS00 (2nd edition)
Date Published May 2007 NS
Printed in Japan
2007
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
2SJ687
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate Leakage Current
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
−10
UNIT
μA
nA
V
IDSS
VDS = −20 V, VGS = 0 V
<R>
<R>
IGSS
VGS = m12 V, VDS = 0 V
VDS = −10 V, ID = −1 mA
VDS = −10 V, ID = −10 A
VGS = −4.5 V, ID = −10 A
VGS = −3.0 V, ID = −10 A
VGS = −2.5 V, ID = −10 A
VDS = −10 V,
m100
−1.45
Gate to Source Cut-off Voltage
Forward Transfer Admittance Note
Drain to Source On-state Resistance Note
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
−0.6
−1.2
20
S
5.4
7.1
7.0
9.0
20
mΩ
mΩ
mΩ
pF
pF
pF
ns
10.8
4400
1070
760
36
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Coss
VGS = 0 V,
Crss
f = 1 MHz
td(on)
tr
VDD = −10 V, ID = −10 A,
VGS = −4.5 V,
220
270
310
57
ns
Turn-off Delay Time
Fall Time
td(off)
tf
RG = 3 Ω
ns
ns
Total Gate Charge
QG
VDD = −16 V,
nC
nC
nC
V
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage Note
Reverse Recovery Time
Reverse Recovery Charge
QGS
VGS = −4.5 V,
12
QGD
VF(S-D)
trr
ID = −20 A
28
IF = −20 A, VGS = 0 V
IF = −20 A, VGS = 0 V,
di/dt = −100 A/μs
0.85
200
240
1.5
ns
Qrr
nC
Note Pulsed
TEST CIRCUIT 2 SWITCHING TIME
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
D.U.T.
L
RG
= 25 Ω
50 Ω
V
V
GS(−)
R
L
90%
90%
V
GS
V
GS
10%
0
V
DD
PG.
GS = −12 → 0 V
Wave Form
RG
V
PG.
V
DD
DS(−)
90%
−
BVDSS
I
AS
V
DS
V
0
GS(−)
V
DS
10% 10%
V
DS
0
Wave Form
I
D
t
d(on)
t
r
t
d(off)
t
f
V
DD
τ
t
on
t
off
τ = 1
μ
s
Starting Tch
Duty Cycle ≤ 1%
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
I
G
= −2 mA
RL
PG.
V
DD
50 Ω
2
Data Sheet D18719EJ2V0DS
2SJ687
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
120
100
80
60
40
20
0
40
35
30
25
20
15
10
5
0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
Tch - Channel Temperature - °C
TC - Case Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
-1000
-100
-10
I
D(pulse)
D(DC)
I
PW = 1 ms
10 ms
R
DS(on) Limited
(VGS = −4.5 V)
-1
T
C
= 25°C
Single Pulse
-0.1
-0.1
-1
-10
-100
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
100
10
Rth(ch-A) = 125°C/Wi
Rth(ch-C) = 3.47°C/Wi
1
0.1
0.01
Single Pulse
100 μ
1 m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
3
Data Sheet D18719EJ2V0DS
2SJ687
DRAIN CURRENT vs.
FORWARD TRANSFER CHARACTERISTICS
DRAIN TO SOURCE VOLTAGE
-60
-40
-20
0
-100
-10
V
DS = −10 V
Pulsed
V
GS = −4.5 V
-1
−2.5 V
-0.1
T
ch = −55°C
−25°C
25°C
75°C
125°C
150°C
-0.01
-0.001
-0.0001
Pulsed
0
-1
-2
-3
0
-1
-2
-3
VDS - Drain to Source Voltage - V
VGS - Gate to Source Voltage - V
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
<R>
-2
-1.5
-1
100
10
T
ch = −55°C
−25°C
1
25°C
75°C
125°C
150°C
-0.5
0
0.1
V
DS = −10 V
= −1 mA
V
DS = −10 V
I
D
Pulsed
0.01
-75
-25
25
75
125
175
-0.001 -0.01
-0.1
-1
-10
-100
ID - Drain Current - A
Tch - Channel Temperature - °C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
50
60
I
D
= −10 A
Pulsed
50
Pulsed
40
30
20
10
0
40
30
20
V
GS = −2.5 V
10
0
−4.5 V
0
-5
-10
-15
-0.1
-1
-10
-100
VGS - Gate to Source Voltage - V
ID - Drain Current - A
4
Data Sheet D18719EJ2V0DS
2SJ687
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
15
10
5
10000
1000
100
C
iss
V
GS = −2.5 V
C
oss
−4.5 V
C
rss
V
GS = 0 V
I = −10 A
D
f = 1 MHz
Pulsed
0
-0.01
-0.1
-1
-10
-100
-75
-25
25
75
125
175
VDS - Drain to Source Voltage - V
Tch - Channel Temperature - °C
SWITCHING CHARACTERISTICS
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
-25
1000
100
10
-5
-4
-3
-2
-1
0
V
DD = −16 V
t
d(off)
−10 V
-20
-15
-10
-5
−4 V
t
f
t
r
V
GS
t
d(on)
V
V
R
DD = −10 V
GS = −4.5 V
V
DS
I
D
= −20 A
G
= 3 Ω
0
-0.1
-1
-10
-100
0
10
20
30
40
50
60
ID - Drain Current - A
QG - Gate Charge - nC
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
-100
10000
1000
100
−4.5 V
-10
-1
V
GS = 0 V
−2.5 V
-0.1
-0.01
di/dt = −100 A/μs
V
GS = 0 V
Pulsed
10
0
-0.5
-1
-1.5
-0.1
-1
-10
-100
VF(S-D) - Source to Drain Voltage - V
IF - Diode Forward Current - A
5
Data Sheet D18719EJ2V0DS
2SJ687
SINGLE AVALANCHE CURRENT vs.
INDUCTIVE LOAD
SINGLE AVALANCHE ENERGY
DERATING FACTOR
-100
-10
-1
120
100
80
60
40
20
0
V
R
V
I
DD = −10 V
= 25 Ω
GS = −12 → 0 V
AS ≤ −20 A
G
I
AS = −20 A
EAS = 40 mJ
Starting Tch = 25°C
V
R
V
DD = −10 V
= 25 Ω
G
GS = −12 → 0 V
0.01
0.1
1
10
25
50
75
100
125
150
L - Inductive Load - mH
Starting Tch - Starting Channel Temperature - °C
6
Data Sheet D18719EJ2V0DS
2SJ687
PACKAGE DRAWING (Unit: mm)
TO-252 (MP-3ZK)
2.3 0.1
6.5 0.2
5.1 TYP.
4.3 MIN.
0.5 0.1
No Plating
4
1
2
3
No Plating
0.76 0.12
1.14 MAX.
0 to 0.25
0.5 0.1
2.3 2.3
1.0
1. Gate
2. Drain
3. Source
4. Fin (Drain)
EQUIVALENT CIRCUIT
Drain
Body
Diode
Gate
Source
Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately
degrade the device operation. Steps must be taken to stop generation of static electricity as much as
possible, and quickly dissipate it once, when it has occurred.
7
Data Sheet D18719EJ2V0DS
2SJ687
•
The information in this document is current as of May, 2007. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or
data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all
products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
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•
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M8E 02. 11-1
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