2SJ76 [HITACHI]
Silicon P-Channel MOS FET; 硅P沟道MOS场效应管
| 型号： | 2SJ76 |
| 厂家： | 
HITACHI SEMICONDUCTOR |
| 描述： | Silicon P-Channel MOS FET |
| 文件： | 总6页 (文件大小：36K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SJ76, 2SJ77, 2SJ78, 2SJ79
Silicon P-Channel MOS FET
Application
High frequency and low frequency power amplifier, high speed power switching
Complementary pair with 2SK213, 2SK214, 2SK215, 2SK216
Features
•
•
•
•
Suitable for direct mounting
High forward transfer admittance
Excellent frequency response
Enhancement-mode
Outline
TO-220AB
1
D
2
3
1. Gate
G
2. Source
(Flange)
3. Drain
S
2SJ76, 2SJ77, 2SJ78, 2SJ79
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
–140
–160
–180
–200
±15
Unit
Drain to source voltage
2SJ76
2SJ77
2SJ78
2SJ79
VDSX
V
Gate to source voltage
Drain current
VGSS
ID
V
–500
–500
1.75
mA
mA
W
Body to drain diode reverse drain current
Channel dissipation
IDR
Pch
Pch*1
Tch
Tstg
30
W
Channel temperature
150
°C
°C
Storage temperature
–45 to +150
Note: 1. Value at TC = 25°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
V(BR)DSX –140
–160
Typ
—
Max
—
Unit
V
Test conditions
Drain to source
2SJ76
VGS = 2 V, ID = –1 mA
breakdown voltage 2SJ77
—
—
V
2SJ78
2SJ79
–180
—
—
V
–200
—
—
V
Gate to source breakdown
voltage
V(BR)GSS ±15
—
—
V
IG = ±10 µA, VDS = 0
Gate to source voltage
VGS(on)
VDS(sat)
–0.2
—
—
—
–1.5
–2.0
V
V
ID = –10 mA, VDS = –10 V*1
ID = –10 mA, VGD = 0 *1
Drain to source saturation
voltage
Forward transfer admittance
Input capacitance
|yfs|
20
—
—
35
—
—
—
mS
pF
pF
ID = –10 mA, VDS = –20 V*1
VDS = –10 V, ID = –10 mA,
f = 1 MHz
Ciss
Crss
120
4.8
Reverse transfer capacitance
Note: 1. Pulse test
2
2SJ76, 2SJ77, 2SJ78, 2SJ79
Typical Output Characteristics
Power vs. Temperature Derating
–500
–400
–300
–200
–100
60
40
20
–4.5
–4.0
TC = 25°C
–3.5
–3.0
–2.5
–2.0
–1.5
–1.0
VGS = –0.5 V
0
50
100
150
0
–4
–8
–12
–16
–20
Case Temperature TC (°C)
Drain to Source Voltage VDS (V)
Typical Output Characteristics
Typical Transfer Characteristics
VDS = –20 V
–50
–40
–30
–20
–10
–500
–400
–300
–200
–100
–1.0
TC = 25°C
–0.9
–0.8
–0.7
–0.6
–0.5
–0.4
–0.3
–0.2
VGS = –0.1 V
0
–20
–40
–60
–80
–100
0
–1
–2
–3
–4
–5
Gate to Source Voltage VGS (V)
Drain to Source Voltage VDS (V)
2SJ76, 2SJ77, 2SJ78, 2SJ79
Forward Transfer Admittance
vs. Drain Current
Typical Transfer Characteristics
–100
200
100
50
VDS = –20 V
–80
–60
–40
–20
20
10
5
TC = 25°C
V
DS = –20 V
2
–2
0
–0.4
–0.8
–1.2
–1.6 –2.0
–5 –10 –20
–50 –100 –200
Drain Current ID (mA)
Gate to Source Voltage VGS (V)
Forward Transfer Admittance
vs. Frequency
500
100
10
TC = 25°C
VDS = –20 V
ID = –10 mA
1.0
0.1
0.05
5 k10 k
100 k
1 M
10 M 50 M
Frequency f (Hz)
Unit: mm
11.5 MAX
10.16 ± 0.2
4.44 ± 0.2
9.5
8.0
+0.1
-0.08
1.26 ± 0.15
φ 3.6
2.7 MAX
1.5 MAX
0.76 ± 0.1
2.54 ± 0.5
0.5 ± 0.1
2.54 ± 0.5
Hitachi Code
JEDEC
EIAJ
TO-220AB
Conforms
Conforms
Weight (reference value) 1.8 g
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
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Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.
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