2SC6065 [SANYO]
NPN Triple Diffused Planar Silicon Transistor Switching Regulator Applications; NPN型三重扩散平面硅晶体管开关稳压器的应用
| 型号： | 2SC6065 |
| 厂家： | 
SANYO SEMICON DEVICE |
| 描述： | NPN Triple Diffused Planar Silicon Transistor Switching Regulator Applications |
| 文件： | 总4页 (文件大小：40K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Ordering number : EN8561
NPN Triple Diffused Planar Silicon Transistor
2SC6065
Switching Regulator Applications
Features
•
High breakdown voltage.
•
High-speed switching.
•
Wide ASO.
•
Adoption of MBIT process.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Symbol
Conditions
Ratings
Unit
V
V
CBO
V
CEO
V
EBO
500
400
8
V
V
I
1.5
3
A
C
Collector Current (Pulse)
Base Current
I
PW≤300µs, duty cycle≤10%
A
CP
I
B
0.7
0.9
150
A
Collector Dissipation
Junction Temperature
Storage Temperature
P
W
°C
°C
C
Tj
Tstg
--55 to +150
Electrical Characteristics at Ta=25°C
Ratings
typ
Parameter
Collector Cutoff Current
Symbol
Conditions
Unit
min
max
10
I
V
CB
V
EB
V
CE
V
CE
V
CE
=400V, I =0A
µA
µA
CBO
E
Emitter Cutoff Current
I
=5V, I =0A
10
50
EBO
C
h
h
h
1
2
3
=5V, I =0.1A
20
10
10
FE
FE
FE
C
DC Current Gain
=5V, I =0.7A
C
=5V, I =1mA
C
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Sem iconductor Com pany
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
12006CB MS IM TB-00001637 No.8561-1/4
2SC6065
Continued from preceding page.
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
max
Gain-Bandwidth Product
Output Capacitance
f
V
V
=10V, I =0.1A
C
20
MHz
pF
V
T
CE
CB
Cob
=10V, f=1MHz
10
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
V
V
(sat)
I
C
I
C
I
C
I
C
=0.7A, I =0.14A
0.8
CE
B
(sat)
=0.7A, I =0.14A
1.5
V
BE
B
V
V
V
=1mA, I =0A
500
V
(BR)CBO
(BR)CEO
(BR)EBO
E
=5mA, R =∞
BE
400
8
V
I =1mA, I =0A
E
V
C
t
I
I
I
=1A, I =0.2A, I =--0.4A, R =200Ω, V =200V
B1 B2 CC
0.5
2.5
µs
µs
µs
on
C
C
C
L
Storage Time
t
=1A, I =0.2A, I =--0.4A, R =200Ω, V =200V
B1 B2 CC
stg
L
Fall Time
t
=1A, I =0.2A, I =--0.4A, R =200Ω, V =200V
0.25
f
B1
B2
L
CC
Package Dimensions
unit : mm
Switching Time Test Circuit
7519-003
I
I
B1
B2
2.5
6.9
OUTPUT
INPUT
1.45
1.0
PW=20µs
D.C.≤1%
R
B
R
L
V
R
50Ω
+
+
100µF
470µF
0.6
0.5
V
= --5V
V
=200V
BE
CC
1
2
3
0.45
0.9
1 : Emitter
2 : Collector
3 : Base
2.54
2.54
SANYO : NMP
I
-- V
I
-- V
C BE
C
CE
2.0
2.0
1.5
1.0
0.5
V
=5V
CE
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
I =0mA
B
0
0
0
1
2
3
4
5
6
7
8
9
10
0.2
0.4
0.6
0.8
1.0
1.2
1.4
IT06214
Collector-to-Emitter Voltage, V
CE
-- V IT06213
Base-to-Emitter Voltag, V -- V
BE
No.8561-2/4
2SC6065
h
FE
-- I
V
(sat) -- I
CE
C
C
10
7
5
3
2
I
C
/ I =5
B
V
CE
=5V
3
2
100
7
5
1.0
7
5
3
2
3
2
10
7
5
0.1
7
5
3
2
3
2
1.0
0.01
0.01
2
3
5
7
2
3
5
7
2
3
5
7
2
3
2
3
5
7
2
3
5
7
2
3
5 7
0.001
5
0.01
0.1
1.0
0.1
1.0
10
IT06216
IT06215
Collector Current, I -- A
Collector Current, I -- A
C
C
V
(sat) -- I
SW Time -- I
BE
C
C
10
I
C
/ I =5
B
I
I
I
=5
=2
C / B1
7
5
I
B2 / B1
R load
3
2
3
2
1.0
1.0
7
5
7
5
3
2
3
2
0.1
0.01
0.1
0.1
2
3
5
7
2
3
5
7
2
3
2
3
5
7
2
3
0.1
1.0
1.0
Collector Current, I -- A
IT06217
Collector Current, I -- A
IT06218
C
C
Forward Bias A S O
Reverse Bias A S O
7
10
7
5
5
I
=3A
CP
3
2
I =1.5A
C
3
2
1.0
7
5
1.0
7
5
3
2
0.1
7
5
3
2
3
2
0.1
7
5
0.01
7
5
Ta=25°C
3
2
3
2
Ta=25°C
Single pulse
I
= --0.3A
B2
L=500µH, single pulse
0.001
0.1
0.01
10
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
1.0
10
100
100
1000
Collector-to-Emitter Voltage, V
-- V
Collector-to-Emitter Voltage, V
-- V
IT06220
CE
CE
P
-- Ta
C
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta -- °C
IT10278
No.8561-3/4
2SC6065
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer’s
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer’s products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
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or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
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contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
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for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
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no guarantees are made or implied regarding its use or any infringements of intellectual property rights
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This catalog provides information as of January, 2006. Specifications and information herein are subject
to change without notice.
PS No.8561-4/4
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