2SC6071 [SANYO]
NPN Epitaxial Planar Silicon Transistor High-Current Switching Applications; NPN外延平面硅晶体管大电流开关应用
| 型号： | 2SC6071 |
| 厂家： | 
SANYO SEMICON DEVICE |
| 描述： | NPN Epitaxial Planar Silicon Transistor High-Current Switching Applications |
| 文件： | 总4页 (文件大小：38K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Ordering number : ENA0271
SANYO Sem iconductors
DATA S HEET
NPN Epitaxial Planar Silicon Transistor
2SC6071
High-Current Switching Applications
Applications
•
Relay drivers, lamp drivers, motor drivers.
Features
• Adoption of MBIT process.
•
Large current capacitance.
• Low collector-to-emitter saturation voltage.
• High-speed switching.
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Symbol
Conditions
Ratings
Unit
V
V
120
120
50
CBO
V
V
CES
CEO
EBO
V
V
V
8
V
I
10
A
C
Collector Current (Pulse)
Base Current
I
PW≤100µs
Tc=25°C
13
A
CP
I
B
2
A
0.95
20
W
W
°C
°C
Collector Dissipation
P
C
Junction Temperature
Storage Temperature
Tj
Tstg
150
--55 to +150
Electrical Characteristics at Ta=25°C
Ratings
typ
Parameter
Collector Cutoff Current
Symbol
Conditions
Unit
min
max
10
I
V
V
V
V
V
=40V, I =0A
µA
µA
CBO
CB
EB
CE
CE
CB
E
Emitter Cutoff Current
I
=4V, I =0A
10
EBO
C
DC Current Gain
h
FE
=2V, I =1A
200
700
C
Gain-Bandwidth Product
Output Capacitance
f
=5V, I =1A
200
MHz
pF
T
C
Cob
=10V, f=1MHz
60
180
Collector-to-Emitter Saturation Voltage
Base-to-Emitterr Saturation Voltage
V
V
(sat)
I
C
C
=5A, I =250mA
360
1.4
mV
V
CE
B
(sat)
I
=5A, I =250mA
0.93
BE
B
Continued on next page.
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
80906 / 22406EA MS IM TB-00002046 No. A0271-1/4
2SC6071
Continued from preceding page.
Ratings
typ
Parameter
Symbol
Conditions
=100µA, I =0A
Unit
min
120
max
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-On Time
V
I
I
I
V
V
(BR)CBO
C
C
C
E
V
=100µA, R =0Ω
BE
120
50
8
(BR)CES
(BR)CEO
(BR)EBO
V
V
=1mA, R =∞
BE
V
I =100µA, I =0A
V
E
C
t
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
40
ns
ns
ns
on
Storage Time
t
1000
80
stg
Fall Time
t
f
Package Dimensions
unit : mm
7518-003
Package Dimensions
unit : mm
7003-003
2.3
6.5
5.0
6.5
5.0
4
2.3
0.5
0.5
4
0.5
0.85
0.85
0.7
1.2
1
2
3
0.6
0 to 0.2
1.2
0.6
0.5
1 : Base
1 : Base
2 : Collector
3 : Emitter
4 : Collector
2 : Collector
3 : Emitter
4 : Collector
1
2
3
2.3 2.3
SANYO : TP-FA
2.3 2.3
SANYO : TP
Switching Time Test Circuit
I
B1
PW=20µs
D.C.≤1%
OUTPUT
I
B2
INPUT
R
B
V
R
R
L
+
50Ω
+
100µF
= --5V
470µF
V
V
=20V
CC
BE
I =20I = --20I =3A
C B1 B2
No. A0271-2/4
2SC6071
I
-- V
h
FE
-- I
C
BE
C
10
9
1000
V
=2V
V
=2V
CE
CE
7
8
5
25°C
7
6
3
2
5
4
3
100
2
7
1
0
5
2
3
5
7
2
3
5
7
2
3
5
7
0
0.2
0.4
0.6
0.8
1.0
1.2
0.01
0.1
1.0
10
Base-to-Emitter Voltage, V
BE
-- V
IT10656
IT10655
Collector Current, I -- A
C
f
-- I
Cob -- V
T
C
CB
3
2
3
2
f=1MHz
V
=5V
CE
100
7
100
5
7
5
3
2
3
2
10
2
3
5
7
2
3
5
7
2
3
5
7
2
3
3
3
5
5
5
7
2
3
5
7
2
3
5
7
0.1
1.0
10
0.01
0.1
1.0
10
IT10658
IT10657
Collector-to-Base Voltage, V
-- V
CB
Collector Current, I -- A
V
(sat) -- CI
CE
V
CE
(sat) -- I
C
C
1.0
7
5
I
/ I =50
B
I
/ I =20
B
C
7
5
C
3
2
3
2
0.1
7
0.1
5
7
5
3
2
3
2
0.01
7
5
3
0.01
2
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5 7
0.01
0.1
1.0
10
0.01
0.1
1.0
10
IT10660
Collector Current, I -- A
IT10659
Collector Current, I -- A
C
V
(sat) -- CI
BE
A S O
C
3
2
3
2
I
/ I =50
B
I
=13A (PW≤100µs)
10µs
C
100ms
CP
10
7
5
I =10A
C
3
2
1.0
1.0
7
5
7
5
3
2
0.1
7
5
3
3
2
Tc=25°C
Single pulse
0.01
0.1
2
0.01
2
3
5
7
2
3
5
7
2
3
5 7
2
7
2
3
5
7
2
3
5 7
10
IT10661
1.0
10
100
-- V
IT10662
0.1
1.0
Collector-to-Emitter Voltage, V
CE
Collector Current, I -- A
C
No. A0271-3/4
2SC6071
P
-- Ta
P
-- Tc
C
C
1.0
0.95
0.9
25
20
15
10
0.8
0.7
0.6
0.5
0.4
0.3
0.2
5
0
0.1
0
0
20
40
60
80
100
120
140
160
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta -- °C
IT10663
Case Temperature, Tc -- °C
IT10664
Specifications of any and all SANYO Semiconductor products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state,
and are not guarantees of the performance, characteristics, and functions of the described products
as mounted in the customer's products or equipment. To verify symptoms and states that cannot be
evaluated in an independent device, the customer should always evaluate and test devices mounted
in the customer's products or equipment.
SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any
and all semiconductor products fail with some probability. It is possible that these probabilistic failures
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so that these kinds of accidents or events cannot occur. Such measures include but are not limited to
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Any and all information described or contained herein are subject to change without notice due to
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for the SANYO Semiconductor product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not
guaranteed for volume production. SANYO Semiconductor believes information herein is accurate
and reliable, but no guarantees are made or implied regarding its use or any infringements of
intellectual property rights or other rights of third parties.
This catalog provides information as of February, 2006. Specifications and information herein are subject
to change without notice.
PS No. A0271-4/4
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