2SB1570P [SANKEN]
Power Bipolar Transistor, 12A I(C), 150V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, MT-200, 3 PIN;
| 型号： | 2SB1570P |
| 厂家： | 
SANKEN ELECTRIC |
| 描述： | Power Bipolar Transistor, 12A I(C), 150V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, MT-200, 3 PIN |
| 文件： | 总1页 (文件大小：23K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
E
C
(70Ω)
B
Darlington 2 S B1 5 7 0
Equivalent circuit
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2401)
Application : Audio, Series Regulator and General Purpose
External Dimensions MT-200
■Absolute maximum ratings
(Ta=25°C)
(Ta=25°C)
■Electrical Characteristics
2SB1570
Unit
2SB1570
Symbol
ICBO
Conditions
Symbol
Unit
±0.2
6.0
±0.3
36.4
–100max
VCB=–160V
VEB=–5V
VCBO
VCEO
VEBO
IC
–160
µA
V
±0.2
24.4
2.1
–100max
–150min
5000min
–2.5max
–3.0max
50typ
±0.1
2-ø3.2
–150
IEBO
µA
V
9
IC=–30mA
V(BR)CEO
hFE
V
–5
–12
V
VCE=–4V, IC=–7A
IC=–7A, IB=–7mA
IC=–7A, IB=–7mA
VCE=–12V, IE=2A
VCB=–10V, f=1MHz
A
a
b
IB
VCE(sat)
VBE(sat)
fT
V
V
–1
A
PC
150(Tc=25°C)
150
W
°C
°C
2
Tj
MHz
pF
3
+0.2
-0.1
0.65
+0.2
-0.1
230typ
Tstg
COB
–55 to +150
1.05
+0.3
-0.1
to
to
to
hFE Rank O(5000 12000), P(6500 20000), Y(15000 30000)
3.0
±0.1
±0.1
5.45
5.45
B
C
E
■Typical Switching Characteristics (Common Emitter)
Weight : Approx 18.4g
a. Type No.
VCC
(V)
RL
(Ω)
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(mA)
IB2
(mA)
ton
(µs)
tstg
(µs)
tf
(µs)
b. Lot No.
–70
10
–7
–10
5
–7
7
0.8typ
3.0typ
1.2typ
–
–
–
IC VCE Characteristics (Typical)
VCE(sat) IB Characteristics (Typical)
IC VBE Temperature Characteristics (Typical)
(VCE=–4V)
–12
–10
–8
–6
–4
–2
0
–3
–12
–10
–8
–2
–10A
–7A
–6
–0.6mA
IB=–0.4mA
IC=–5A
–1
–4
–2
0
0
0
–2
–4
–6
–0.2 –0.5 –1
–5 –10
–50 –100 –200
0
–1
–2
–2.5
Collector-Emitter Voltage VCE(V)
Base Current IB(mA)
Base-Emittor Voltage VBE(V)
–
–
–
j-a t Characteristics
hFE IC Characteristics (Typical)
hFE IC Temperature Characteristics (Typical)
θ
(VCE=–4V)
(VCE=–4V)
2
1
50000
40,000
125˚C
Typ
25˚C
10,000
5,000
10000
0.5
–30˚C
5000
0.1
1000
800
–0.2
1,000
1
5
10
50 100
Time t(ms)
500 1000 2000
–0.5
–1
–5
–10 –12
–0.2
–0.5
–1
Collector Current IC(A)
–5
–10–12
Collector Current IC(A)
–
fT IE Characteristics (Typical)
Safe Operating Area (Single Pulse)
–
Pc Ta Derating
(VCE=–12V)
160
–30
100
80
–10
–5
120
80
60
40
Typ
–1
–0.5
40
Without Heatsink
Natural Cooling
20
0
–0.1
Without Heatsink
5
0
–0.05
0.02 0.05 0.1
0.5
1
5
10
–3
–5
–10
–50
–100 –200
0
25
50
75
100
125
150
Collector-Emitter Voltage VCE(V)
Ambient Temperature Ta(˚C)
Emitter Current IE(A)
48
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