2SB1571 [KEXIN]
Silicon PNP Epitaxial Planar; 硅PNP外延平面
| 型号： | 2SB1571 |
| 厂家： | 
GUANGDONG KEXIN INDUSTRIAL CO.,LTD |
| 描述： | Silicon PNP Epitaxial Planar |
| 文件： | 总2页 (文件大小：53K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMD Type
Transistors
Silicon PNP Epitaxial Planar
2SB1571
Features
Low VCE(sat): VCE(sat)
-0.35 V
Absolute Maximum Ratings Ta = 25
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current (DC)
Collector Current (pulse) *
Base Current (DC)
Symbol
VCBO
VCEO
VEBO
IC(DC)
Ic(Pulse)
IB(DC)
IB(Pulse)
PT
Rating
Unit
V
-50
-30
V
-6
V
-5
A
-8
-0.2
A
A
Base Current (pulse) *
Total Power Dissipation *
Junction Temperature
-0.4
A
2
W
Tj
150
Storage temperature
Tstg
-55 to +150
* PW
10 ms, Duty Cycle
50%
1
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SMD Type
Transistors
2SB1571
Electrical Characteristics Ta = 25
Parameter
Collector Cut-off Current
Emitter Cut-off Current
Symbol
Testconditons
VCB = -50 V, IE = 0
Min
Typ
Max
-100
-100
Unit
nA
ICBO
IEBO
hFE1
hFE2
VBE
VEB = -6.0 V, IC = 0
nA
VCE = -1.0 V, IC = -1.0 A
VCE = -1.0 V, IC = -2.0 A
VCE = -1.0 V, IC = -0.1 A
80
DC Current Gain *
100
200
400
Base to Emitter Voltage *
Collector Saturation Voltage *
Collector Saturation Voltage *
Base Saturation Voltage *
Gain Bandwidth Product
Output Capacitance
Turn-on Time
-0.6 -0.665 -0.7
-0.17 -0.35
V
V
VCE(sat)1 IC = -3.0 A, IB = -0.15 A
VCE(sat)2 IC = -5.0 A, IB = -0.25 A
VBE(sat) IC = -3.0 A, IB = -0.15 A
-0.28 -0.55
V
-0.89
150
100
265
350
50
-1.2
V
fT
Cob
ton
tstg
tf
VCE = -10 V, IE = 0.5 A
MHz
pF
ns
ns
ns
VCB = -10 V, IE = 0, f = 1.0 MHz
IC = -2.0 A, VCC = -10 V,RL = 5.0Ù, IB1
= -IB2 = -0.1 A,
Storage Time
Fall Time
* Pulsed: PW
350 ìs, Duty Cycle
2%.
hFE Classification
Marking
hFE
HX
100 200
HY
160 320
HZ
200 400
2
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