K4R271669E-RCS80 [SAMSUNG]

Rambus DRAM, 8MX16, CMOS, PBGA54, WBGA-54;
K4R271669E-RCS80
型号: K4R271669E-RCS80
厂家: SAMSUNG SEMICONDUCTOR    SAMSUNG SEMICONDUCTOR
描述:

Rambus DRAM, 8MX16, CMOS, PBGA54, WBGA-54

动态存储器 内存集成电路
文件: 总20页 (文件大小:290K)
下载:  下载PDF数据表文档文件

K4R271669E-TCS8

Rambus DRAM, 8MX16, CMOS, PBGA54, WBGA-54

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0 SAMSUNG

K4R271669F

128Mbit RDRAM(F-die)

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57 SAMSUNG

K4R271669F

128Mbit RDRAM(F-die)

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58 SAMSUNG

K4R271669F-RCS80

Rambus DRAM, 8MX16, CMOS, PBGA54, WBGA-54

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0 SAMSUNG

K4R271669F-TCS8

Rambus DRAM, 8MX16, CMOS, PBGA54

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1 SAMSUNG

K4R271669F-TCS80

Rambus DRAM, 8MX16, CMOS, PBGA54, LEAD FREE, WBGA-54

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0 SAMSUNG

K4R441869A

256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM

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65 SAMSUNG

K4R441869A

256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM

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12 SAMSUNG

K4R441869A-N(M)CG6

256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM

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12 SAMSUNG

K4R441869A-N(M)CK7

256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM

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11 SAMSUNG

K4R441869A-N(M)CK8

256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM

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8 SAMSUNG

K4R441869A-NCG6

Rambus DRAM, 8MX18, 53.3ns, CMOS, PBGA62, CENTER BONDED, MICRO, CSP, BGA-62

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0 SAMSUNG

K4R441869A-NCK8

Rambus DRAM, 8MX18, 45ns, CMOS, PBGA62, CENTER BONDED, MICRO, CSP, BGA-62

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0 SAMSUNG

K4R441869A-NMCG6

256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM

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11 SAMSUNG

K4R441869A-NMCG6

256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM

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6 SAMSUNG