K4R271669F [SAMSUNG]

128Mbit RDRAM(F-die); 128Mbit的RDRAM （ F-模）

K4R271669F


型号：	K4R271669F
厂家：	SAMSUNG SEMICONDUCTOR
描述：	128Mbit RDRAM(F-die) 128Mbit的RDRAM （ F-模）动态存储器
文件：	总20页 (文件大小：292K)
下载：	下载PDF数据表文档文件

K4R271669F-RCS80

Rambus DRAM, 8MX16, CMOS, PBGA54, WBGA-54

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0 SAMSUNG

K4R271669F-TCS8

Rambus DRAM, 8MX16, CMOS, PBGA54

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1 SAMSUNG

K4R271669F-TCS80

Rambus DRAM, 8MX16, CMOS, PBGA54, LEAD FREE, WBGA-54

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0 SAMSUNG

K4R441869A

256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM

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65 SAMSUNG

K4R441869A

256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM

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12 SAMSUNG

K4R441869A-N(M)CG6

256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM

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12 SAMSUNG

K4R441869A-N(M)CK7

256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM

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11 SAMSUNG

K4R441869A-N(M)CK8

256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM

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8 SAMSUNG

K4R441869A-NCG6

Rambus DRAM, 8MX18, 53.3ns, CMOS, PBGA62, CENTER BONDED, MICRO, CSP, BGA-62

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0 SAMSUNG

K4R441869A-NCK8

Rambus DRAM, 8MX18, 45ns, CMOS, PBGA62, CENTER BONDED, MICRO, CSP, BGA-62

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-

0 SAMSUNG

K4R441869A-NMCG6

256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM

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11 SAMSUNG

K4R441869A-NMCG6

256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM

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6 SAMSUNG

K4R441869A-NMCK7

256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM

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6 SAMSUNG

K4R441869A-NMCK7

256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM

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17 SAMSUNG

K4R441869A-NMCK8

256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM

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17 SAMSUNG

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