K4E640412E-TI450 [SAMSUNG]

EDO DRAM, 16MX4, 45ns, CMOS, PDSO32,;
K4E640412E-TI450
型号: K4E640412E-TI450
厂家: SAMSUNG SEMICONDUCTOR    SAMSUNG SEMICONDUCTOR
描述:

EDO DRAM, 16MX4, 45ns, CMOS, PDSO32,

动态存储器 光电二极管 内存集成电路
文件: 总21页 (文件大小:192K)
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K4E640412E-TI45T

暂无描述

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0 SAMSUNG

K4E640412E-TI50

16M x 4bit CMOS Dynamic RAM with Extended Data Out

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37 SAMSUNG

K4E640412E-TI50T

EDO DRAM, 16MX4, 50ns, CMOS, PDSO32,

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0 SAMSUNG

K4E640412E-TI60

16M x 4bit CMOS Dynamic RAM with Extended Data Out

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27 SAMSUNG

K4E640412E-TI60

EDO DRAM, 16MX4, 60ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, TSOP2-32

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0 SAMSUNG

K4E640412E-TI60T

暂无描述

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0 SAMSUNG

K4E640412E-TP45

16M x 4bit CMOS Dynamic RAM with Extended Data Out

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33 SAMSUNG

K4E640412E-TP45

EDO DRAM, 16MX4, 45ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, TSOP2-32

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0 SAMSUNG

K4E640412E-TP45T

暂无描述

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0 SAMSUNG

K4E640412E-TP50

16M x 4bit CMOS Dynamic RAM with Extended Data Out

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30 SAMSUNG

K4E640412E-TP50

EDO DRAM, 16MX4, 50ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, TSOP2-32

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0 SAMSUNG

K4E640412E-TP500

EDO DRAM, 16MX4, 50ns, CMOS, PDSO32,

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0 SAMSUNG

K4E640412E-TP50T

EDO DRAM, 16MX4, 50ns, CMOS, PDSO32,

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0 SAMSUNG

K4E640412E-TP60

16M x 4bit CMOS Dynamic RAM with Extended Data Out

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28 SAMSUNG

K4E640412E-TP60

EDO DRAM, 16MX4, 60ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, TSOP2-32

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0 SAMSUNG