K4E640412E-TP50T [SAMSUNG]

EDO DRAM, 16MX4, 50ns, CMOS, PDSO32,;

K4E640412E-TP50T


型号：	K4E640412E-TP50T
厂家：	SAMSUNG SEMICONDUCTOR
描述：	EDO DRAM, 16MX4, 50ns, CMOS, PDSO32, 动态存储器光电二极管内存集成电路
文件：	总21页 (文件大小：192K)
下载：	下载PDF数据表文档文件

K4E640412E-TP60

16M x 4bit CMOS Dynamic RAM with Extended Data Out

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28 SAMSUNG

K4E640412E-TP60

EDO DRAM, 16MX4, 60ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, TSOP2-32

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0 SAMSUNG

K4E640412E-TP60T

EDO DRAM, 16MX4, 60ns, CMOS, PDSO32,

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0 SAMSUNG

K4E640811B-JC50

EDO DRAM, 8MX8, 50ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, SOJ-32

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0 SAMSUNG

K4E640811B-JC500

EDO DRAM, 8MX8, 50ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, SOJ-32

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0 SAMSUNG

K4E640811B-JC500

EDO DRAM, 8MX8, 50ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, SOJ-32

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0 SAMSUNG

K4E640811B-JC600

EDO DRAM, 8MX8, 60ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, SOJ-32

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0 SAMSUNG

K4E640811B-JC600

EDO DRAM, 8MX8, 60ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, SOJ-32

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0 SAMSUNG

K4E640811D-TC600

EDO DRAM, 8MX8, 60ns, CMOS, PDSO32, TSOP2-32

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0 SAMSUNG

K4E640812B

8M x 8bit CMOS Dynamic RAM with Extended Data Out

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32 SAMSUNG

K4E640812B-JL450

EDO DRAM, 8MX8, 50ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, SOJ-32

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0 SAMSUNG

K4E640812B-JL600

EDO DRAM, 8MX8, 65ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, SOJ-32

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0 SAMSUNG

K4E640812B-TC450

EDO DRAM, 8MX8, 50ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, TSOP2-32

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0 SAMSUNG

K4E640812B-TC500

EDO DRAM, 8MX8, 55ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, TSOP2-32

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0 SAMSUNG

K4E640812B-TC60

EDO DRAM, 8MX8, 60ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, TSOP2-32

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0 SAMSUNG

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