IRF9630 [SAMSUNG]
P-CHANNEL POWER MOSFETS; P沟道功率MOSFET
| 型号： | IRF9630 |
| 厂家： | 
SAMSUNG |
| 描述： | P-CHANNEL POWER MOSFETS |
| 文件： | 总12页 (文件大小：512K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
相关型号：
IRF9630-004
Power Field-Effect Transistor, 6.5A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
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IRF9630-004PBF
Power Field-Effect Transistor, 6.5A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,
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IRF9630-009
Power Field-Effect Transistor, 6.5A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
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IRF9630-009PBF
Power Field-Effect Transistor, 6.5A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
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IRF9630F
Power Field-Effect Transistor, 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
INFINEON
IRF9630FPBF
Power Field-Effect Transistor, 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,
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IRF9630FX
Power Field-Effect Transistor, 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
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IRF9630FXPBF
Power Field-Effect Transistor, 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
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IRF9630S
Power Field-Effect Transistor, 6.5A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, SMD-220, 3 PIN
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