STU606S [SAMHOP]
Transistor;
| 型号： | STU606S |
| 厂家： | 
SAMHOP MICROELECTRONICS CORP. |
| 描述： | Transistor |
| 文件： | 总8页 (文件大小：122K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Green
Product
STU/D606S
a
S mHop Microelectronics Corp.
Ver 1.1
N-Channel Logic Level Enhancement Mode Field Effect Transistor
FEATURES
Super high dense cell design for low RDS(ON)
PRODUCT SUMMARY
.
VDSS
ID
RDS(ON) (mΩ) Max
Rugged and reliable.
60 @ VGS=10V
75 @ VGS=4.5V
Suface Mount Package.
18A
60V
G
S
S
STU SERIE
S
STD SERIE
-
-
)
-
A
P K
(
)
2 2
A
P K
(
5
TO 5 AA
-
D
2 1 I
TO
°
)
(
ABSOLUTE MAXIMUM RATINGS TA=25 C unless otherwise noted
Symbol
VDS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Units
Limit
60
V
V
A
A
A
VGS
20
°
TC=25 C
18
a
ID
Drain Current-Continuous
°
14.5
72
TC=70 C
b
IDM
-Pulsed
Sigle Pulse Avalanche Energy d
25
EAS
mJ
W
°
36
TC=25 C
a
PD
Maximum Power Dissipation
°
TC=70 C
W
23
Operating Junction and Storage
Temperature Range
-55 to 150
°C
TJ, TSTG
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Case a
°C/W
°C/W
R
3.5
50
JC
JA
a
R
Thermal Resistance, Junction-to-Ambient
Details are subject to change without notice.
Jan,05,2010
www.samhop.com.tw
1
STU/D606S
Ver 1.1
°
)
(
ELECTRICAL CHARACTERISTICS TA=25 C unless otherwise noted
Parameter
Min
Symbol
Typ
Max Units
Conditions
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
IDSS
VGS=0V , ID=250uA
VDS=48V , VGS=0V
VGS= 20V , VDS=0V
60
V
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
uA
1
100
nA
IGSS
ON CHARACTERISTICS
Gate Threshold Voltage
1.8
45
50
16
3.0
60
75
1.0
VGS(th)
VDS=VGS , ID=250uA
VGS=10V , ID=18A
VGS=4.5V , ID=16.2A
VDS=30V , ID=18A
V
m ohm
m ohm
S
RDS(ON)
gFS
Drain-Source On-State Resistance
Forward Transconductance
c
DYNAMIC CHARACTERISTICS
pF
pF
pF
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
c
CISS
COSS
CRSS
825
72
48
VDS=30V,VGS=0V
f=1.0MHz
SWITCHING CHARACTERISTICS
tD(ON)
Turn-On Delay Time
ns
ns
ns
13
12.5
38
VDD=30V
ID=1A
VGS=10V
RGEN=3.3 ohm
t
r
Rise Time
tD(OFF)
Turn-Off Delay Time
Fall Time
ns
6
t
f
VDS=30V,ID=18A,VGS=10V
VDS=30V,ID=18A,VGS=4.5V
13.5
6.3
nC
nC
nC
nC
Qg
Total Gate Charge
Qgs
Qgd
Gate-Source Charge
Gate-Drain Charge
1.6
VDS=30V,ID=18A,
VGS=10V
3.4
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
IS
1.7
1.3
Maximum Continuous Drain-Source Diode Forward Current
A
V
Diode Forward Voltage b
VSD
0.79
VGS=0V,IS=1.7A
Notes
_
a.Surface Mounted on FR4 Board,t < 10sec.
_
_
b.Pulse Test:Pulse Width < 300us, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
d.Starting TJ=25 C,L=0.5mH,VDD = 30V.(See Figure13)
°
Jan,05,2010
www.samhop.com.tw
2
STU/D606S
Ver 1.1
30
20
VGS=5V
VGS=10V
VGS=4V
24
18
16
12
8
VGS=3.5V
25 C
12
6
VGS=3V
4
0
Tj=125 C
-55 C
0
0
0.8
1.6
4.0
4.8
2.4
3.2
0
0.5
1
2
3
1.5
2.5
VDS, Drain-to-Source Voltage(V)
VGS, Gate-to-Source Voltage(V)
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
120
2.0
1.8
1.6
1.4
1.2
1.0
0.0
100
80
V
GS =4.5V
I
D=16.2A
60
40
20
1
VGS=4.5V
VGS=10V
V
GS =10V
=18A
I
D
0
25
100
50
75
125
150
1
6
12
18
24
30
°
Tj( C )
°
ID, Drain Current(A)
Tj, Junction Temperature( C )
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
Figure 4. On-Resistance Variation with Drain
Current and Temperature
1.3
1.3
V
DS =VG S
ID=250uA
I
D=250uA
1.2
1.2
1.1
1.0
0.9
1.1
1.0
0.9
0.8
0.7
0.8
0.7
0.6
0
-50
25 50
-50 -25
0
25 50
75 100 125 150
-25
125 150
75 100
°
°
Tj, Junction Temperature( C )
Tj, Junction Temperature( C )
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Breakdown Voltage Variation
with Temperature
Jan,05,2010
www.samhop.com.tw
3
STU/D606S
Ver 1.1
144
20.0
10.0
ID=18A
120
96
125 C
125 C
25 C
72
48
75 C
75 C
25 C
24
0
1.0
0
2
4
6
8
10
0.2
0.4
0.6
0.8
1.0
1.2
VSD, Body Diode Forward Voltage(V)
VGS, Gate-to-Source Voltage(V)
Figure 8. Body Diode Forward Voltage
Variation with Source Current
Figure 7. On-Resistance vs.
Gate-Source Voltage
1200
10
8
V
DS =30V
=18A
1000
800
Ciss
I
D
6
600
400
4
Coss
2
0
200
0
Crss
0
5
10
15
20
25
30
0
2
4
8
10
12 14 16
6
Qg, Total Gate Charge(nC)
VDS, Drain-to-Source Voltage(V)
Figure 9. Capacitance
Figure 10. Gate Charge
200
220
100
10
1
it
100
60
m
10
i
TD(off)
Tr
0u
)
L
s
N
(O
TD(on)
R DS
1m
Tf
s
10
10
ms
DC
V
G S =10V
VDS =30V,ID=1A
VG S =10V
1
S ingle P ulse
T
A
=25 C
1
0.1
10
60
600
60 100 300
1
6
10
VDS, Drain-Source Voltage(V)
Rg, Gate Resistance(Ω)
Figure 11. switching characteristics
Figure 12. Maximum Safe Operating Area
Jan,05,2010
www.samhop.com.tw
4
STU/D606S
Ver 1.1
(BR )DSS
15V
t
p
DR IVE R
L
V
DS
D.U .T
R
+
G
V
-
DD
I
A
AS
20V
0.01
t
p
I
AS
duct
In i
ve ave
W
f rms
o
ncl
U
ed
am
p
t
Te
s
d
uct
In
Ci cu t
r
i
i
ncl
U
ed
am
p
ve
Figure 13b.
Figure 13a.
2
1
D=0.5
0.2
0.1
DM
P
0.1
0.05
1
t
2
t
0.02
0.01
1. R
2. R
3. TJM-
J
JA (t)=r (t) * R
JA=S ee Datasheet
= PDM* R JA (t)
4. Duty Cycle, D=t /t
J JA
J
S INGLE PULS E
10-4
T
A
J
1
2
0.01
10-5
10-3
10-2
Square Wave Pulse Duration(sec)
10-1
1
10
Figure 14. Normalized Thermal Transient Impedance Curve
Jan,05,2010
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5
STU/D606S
Ver 1.1
PACKAGE OUTLINE DIMENSIONS
A
E
E2
TO-251
C
L
D1
D2
E1
D
1
2
3
H
L1
B2
B1
L2
D3
P
A1
B
MILLIMETERS
INCHES
MIN
SYMBOL
MAX
0.098
0.026
0.031
0.041
0.035
0.024
0.224
0.209
0.287
MIN
MAX
A
A1
2.100
0.350
0.400
0.650
0.500
0.400
5.300
4.900
6.700
7.000
13.700
6.300
4.600
4.800
1.300
1.400
0.500
2.500
0.650
0.800
1.050
0.900
0.600
5.700
5.300
7.300
8.000
15.300
6.700
4.900
5.200
1.700
1.800
0.900
0.083
0.014
0.016
0.026
0.020
0.016
0.209
0.193
0.264
0.276
0.539
0.248
B
B1
B2
C
D
D1
D2
D3
H
E
E1
E2
L
L1
L2
P
0.315
0.602
0.264
0.193
0.205
0.067
0.071
0.035
0.181
0.189
0.051
0.055
0.020
2.300 BSC
0.091 BSC
Jan,05,2010
www.samhop.com.tw
6
STU/D606S
Ver 1.1
E
TO-252
A
b2
C
L3
1
D1
D
E1
2
H
1
3
DETAIL "A"
L4
b1
e
b
L2
L
A1
DETAIL "A"
L1
MILLIMETERS
INCHES
MAX
SYMBOLS
MIN
MAX
MIN
0.083
0.000
0.016
0.030
0.189
0.016
0.209
0.193
0.248
0.173
A
A1
b
b1
b2
C
D
D1
E
E1
e
2.100
0.000
0.400
0.770
4.800
0.400
5.300
4.900
6.300
4.400
2.500
0.200
0.889
1.140
5.460
0.600
6.223
5.515
6.731
5.004
0.098
0.008
0.035
0.045
0.215
0.024
0.245
0.217
0.265
0.197
2.290 REF
0.090 BSC
H
L
8.900
1.397
10.400
1.770
0.350
0.055
0.409
0.070
2.743 REF.
0.508 REF.
0.108 REF.
0.020 REF.
L1
L2
L3
L4
0.035
0.020
0.890
1.700
0.067
0.043
1.100
10°
0.500
°
°
°
10
REF
0
0
°
.
°
1
7
7
REF.
Jan,05,2010
www.samhop.com.tw
7
STU/D606S
Ver 1.1
TO-251 Tube/TO-252 Tape and Reel Data
TO-251 Tube
0.4
7.50
1.25
+
540 1.5
4.5
2~ӿ3.0
6.60
" A"
19.75
TO-252 Carrier Tape
P1
P2
D1
T
FEED DIRECTION
K0
A0
D0
P0
UNIT:р
K0
D1
P1
P2
PACKAGE
A0
B0
D0
E
E1
E2
P0
T
ӿ1.5
TO-252
(16 р*
6.96
²0.1
10.49
²0.1
2.79
²0.1
16.0
²0.3
7.5
²0.15
8.0
²0.1
4.0
²0.1
2.0
²0.15
0.3
²0.05
1.75
²0.1
ӿ2
+ 0.1
-
0
TO-252 Reel
T
S
G
V
R
H
W
UNIT:р
T
N
W
R
M
H
S
G
K
V
TAPE SIZE
REEL SIZE
ӿ13.0
17.0
ӿ330
² 0.5
2.0
²0.5
ӿ97
² 1.0
2.2
10.6
16 р
ӿ 330
+
-
0.5
0.2
+ 1.5
-
0
Jan,05,2010
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8
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