STU608S [SAMHOP]

Transistor;
STU608S
型号: STU608S
厂家: SAMHOP MICROELECTRONICS CORP.    SAMHOP MICROELECTRONICS CORP.
描述:

Transistor

文件: 总8页 (文件大小:96K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
STU/D608S  
SamHop Microelectronics Corp.  
Feb. 06 2007  
N-Channel Enhancement Mode Field Effect Transistor  
FEATURES  
PRODUCT SUMMARY  
Super high dense cell design for low RDS(ON).  
ID  
VDSS  
RDS(ON) ( m  
Ω
) Max  
Rugged and reliable.  
55 @ VGS = 10V  
65 @ VGS = 4.5V  
TO-252 and TO-251 Package.  
ESD Protected.  
60V  
16A  
D
D
G
S
G
STU SERIES  
TO-252AA(D-PAK)  
STD SERIES  
TO-251(l-PAK)  
S
ABSOLUTE MAXIMUM RATINGS (T =25 C unless otherwise noted)  
A
Unit  
V
Limit  
60  
Parameter  
Symbol  
Drain-Source Voltage  
V
DS  
GS  
20  
V
V
Gate-Source Voltage  
25 C  
70 C  
A
A
16  
10  
Drain Current-Continuous a @Ta  
ID  
-Pulsed b  
I
DM  
A
A
30  
10  
a
Drain-Source Diode Forward Current  
I
S
Ta= 25 C  
Ta=70 C  
50  
35  
a
W
C
Maximum Power Dissipation  
P
D
Operating Junction and Storage  
Temperature Range  
TJ, TSTG  
-55 to 175  
THERMAL CHARACTERISTICS  
Thermal Resistance, Junction-to-Case  
Thermal Resistance, Junction-to-Ambient  
C/W  
C/W  
R
JC  
JA  
3
50  
R
1
STU/D608S  
=
N-Channel ELECTRICAL CHARACTERISTICS (T 25 C unless otherwise noted)  
A
Typ Max  
Parameter  
Condition  
Min  
Unit  
Symbol  
5
OFF CHARACTERISTICS  
V
GS = 0V, I  
D
= 250uA  
60  
Drain-Source Breakdown Voltage  
V
BVDSS  
uA  
uA  
1
I
DSS  
GSS  
V
DS = 48V, VGS = 0V  
Zero Gate Voltage Drain Current  
Gate-Body Leakage  
10  
VGS  
= 20V, VDS = 0V  
I
a
ON CHARACTERISTICS  
V
GS(th)  
V
DS = VGS, I  
D
= 250uA  
1.0  
20  
1.6  
46  
50  
3.0  
55  
65  
Gate Threshold Voltage  
V
m ohm  
m ohm  
A
V
GS = 10V, I  
D
= 8A  
= 4A  
R
DS(ON)  
Drain-Source On-State Resistance  
V
V
V
GS = 4.5V, I  
D
ID(ON)  
DS = 5V, VGS = 10V  
DS = 10V, I = 8A  
On-State Drain Current  
gFS  
D
19  
S
Forward Transconductance  
b
DYNAMIC CHARACTERISTICS  
Input Capacitance  
C
ISS  
620  
71  
P
F
V
DS =30V, VGS = 0V  
C
OSS  
P
F
F
Output Capacitance  
f =1.0MH  
Z
C
RSS  
45  
Reverse Transfer Capacitance  
P
SWITCHING CHARACTERISTICS b  
Turn-On Delay Time  
t
D(ON)  
ns  
ns  
ns  
9.5  
12.5  
42  
V
DD = 30V  
= 8 A  
ID  
t
Rise Time  
VGS = 10V  
tD(OFF)  
Turn-Off Delay Time  
Fall Time  
RGEN = 3.3 ohm  
t
9
ns  
Total Gate Charge  
V
DS =30V, I  
D
=8A,VGS =10V  
=8A,VGS =4.5V  
nC  
13  
Q
g
nC  
nC  
nC  
VDS =30V, I  
D
6.4  
1.4  
3.2  
Qgs  
Gate-Source Charge  
Gate-Drain Charge  
V
V
DS =30V, I  
GS =10V  
D
= 8A  
Qgd  
2
S TU/D608S  
E LE C TR IC AL C HAR AC TE R IS TIC S (T =25 C unless otherwise noted)  
A
Typ Max  
P arameter  
DR AIN-S OUR C E DIODE C HAR AC TE R IS TIC S  
C ondition  
Min  
Unit  
V
S ymbol  
a
Diode Forward Voltage  
V
S D  
V
G S = 0V, Is = 10A  
0.9  
1.3  
Notes  
a.Pulse Test:Pulse Width 300us, Duty Cycle 2%.  
b.Guaranteed by design, not subject to production testing.  
15  
12  
30  
VGS =10V  
VGS =4V  
24  
VGS =3.5V  
18  
9
6
VGS =3V  
Tj=125 C  
25 C  
12  
6
0
3
0
VGS =2.5V  
2.5  
-55 C  
0
1.2  
0.6  
1.8  
2.4  
3.6  
3.0  
0
0.5  
1
2
3
1.5  
VDS , Drain-to-S ource Voltage (V)  
VGS , Gate-to-S ource Voltage (V)  
Figure 1. Output Characteristics  
Figure 2. Transfer Characteristics  
90  
2.0  
75  
60  
1.8  
1.6  
1.4  
1.2  
1.0  
0.0  
V
GS =10V  
=8A  
VGS =4.5V  
VGS =10V  
I
D
45  
30  
15  
1
V
GS =4.5V  
=4A  
I
D
1
6
12  
18  
24  
30  
0
25  
100  
50  
75  
125 150  
Tj( C)  
ID, Drain Current (A)  
Tj, J unction Temperature ( C )  
Figure 3. On-R esistance vs. Drain C urrent  
and Gate Voltage  
Figure 4. On-R esistance Variation with  
Drain Current and Temperature  
3
S TU/D608S  
1.3  
1.2  
1.2  
V
DS =VG S  
ID=250uA  
ID=250uA  
1.1  
1.0  
0.9  
0.8  
1.1  
1.0  
0.9  
0.8  
0.7  
0.7  
0.6  
0.5  
6
0
-50  
25 50  
-25  
125 150  
75 100  
-50 -25  
0
25 50 75 100 125 150  
Tj, J unction Temperature ( C )  
Tj, J unction Temperature ( C )  
Figure 6. Breakdown Voltage Variation  
with Temperature  
Figure 5. G ate Threshold Variation  
with Temperature  
144  
20.0  
10.0  
ID=8A  
120  
96  
125 C  
72  
48  
75 C  
25 C  
75 C  
125 C  
24  
0
25 C  
0.9  
S D, Body Diode Forward Voltage (V)  
1.0  
0.0  
0
2
4
6
8
10  
0.3  
0.6  
1.2  
1.5  
VGS , Gate- S ource Voltage (V)  
V
Figure 7. On-R esistance vs.  
Gate-S ource Voltage  
Figure 8. Body Diode Forward Voltage  
Variation with S ource C urrent  
4
S TU/D608S  
1200  
10  
8
V
DS =30V  
=8A  
1000  
I
D
800  
Ciss  
6
600  
400  
4
2
0
6
200  
Coss  
Crss  
0
0
5
10  
15  
20  
25  
30  
0
2
4
8
10  
12  
14 16  
6
VDS , Drain-to S ource Voltage (V)  
Qg, Total G ate C harge (nC )  
Figure 9. Capacitance  
Figure 10. G ate C harge  
220  
60  
t
10  
1
i
10m  
m
Li  
s
)
TD(off)  
Tr  
100  
60  
N
100  
S (O  
ms  
R D  
TD(on)  
Tf  
1s  
D
C
10  
V
G S =10V  
S ingle P ulse  
=25 C  
0.1  
VDS =30V,ID=8A  
VG S =10V  
1
T
A
0.03  
600  
60 100 300  
1
6
10  
0.1  
1
10  
60  
80  
R g, G ate R esistance (  
Ω
)
V
DS , Drain-S ource Voltage (V)  
Figure 12. Maximum S afe  
Figure 11.switching characteristics  
Operating Area  
2
1
D=0.5  
0.2  
0.1  
DM  
P
0.1  
0.05  
1
t
2
t
0.02  
0.01  
1. R įJA (t)=r (t) * R įJA  
2. R įJA=S ee Datasheet  
3. TJM-TA = PDM* R įJA (t)  
4. Duty Cycle, D=t1/t2  
S INGLE PULS E  
0.01  
10-5  
10-4  
10-3  
10-2  
10-1  
1
10  
S quare Wave Pulse Duration (sec)  
Figure 13. Normalized Thermal Transient Impedance Curve  
5
S TU/D608S  
TO-251  
A
E
E2  
C
L
D1  
D2  
E1  
D
1
2
3
H
L1  
B2  
B1  
L2  
D3  
P
A1  
B
MILLIMETERS  
INCHES  
MIN  
SYMBOL  
MAX  
0.098  
0.026  
0.031  
0.041  
0.035  
0.024  
0.224  
0.209  
0.287  
MIN  
MAX  
A
A1  
2.100  
0.350  
0.400  
0.650  
0.500  
0.400  
5.300  
4.900  
6.700  
7.000  
13.700  
6.300  
4.600  
4.800  
1.300  
1.400  
0.500  
2.500  
0.650  
0.800  
1.050  
0.900  
0.600  
5.700  
5.300  
7.300  
8.000  
15.300  
6.700  
4.900  
5.200  
1.700  
1.800  
0.900  
0.083  
0.014  
0.016  
0.026  
0.020  
0.016  
0.209  
0.193  
0.264  
0.276  
0.539  
0.248  
B
B1  
B2  
C
D
D1  
D2  
D3  
H
E
E1  
E2  
L
L1  
L2  
P
0.315  
0.602  
0.264  
0.193  
0.205  
0.067  
0.071  
0.035  
0.181  
0.189  
0.051  
0.055  
0.020  
2.300 BSC  
0.091 BSC  
6
S TU/D608S  
TO-252  
E
A
b2  
C
L3  
1
D1  
D
E1  
H
1
2
3
DETAIL "A"  
L4  
b1  
e
b
L2  
L
A1  
DETAIL "A"  
INCHES  
L1  
MILLIMETERS  
SYMBOLS  
MIN  
MAX  
MIN  
MAX  
0.098  
0.008  
0.035  
0.045  
0.215  
0.024  
0.245  
0.217  
0.265  
0.197  
A
A1  
b
b1  
b2  
C
D
D1  
E
E1  
e
2.100  
0.000  
0.400  
0.770  
4.800  
0.400  
5.300  
4.900  
6.300  
4.400  
2.500  
0.200  
0.889  
1.140  
5.460  
0.600  
6.223  
5.515  
6.731  
5.004  
0.083  
0.000  
0.016  
0.030  
0.189  
0.016  
0.209  
0.193  
0.248  
0.173  
2.290 REF  
0.090 BSC  
H
L
8.900  
1.397  
10.400  
1.770  
0.350  
0.055  
0.409  
0.070  
2.743 REF.  
0.508 REF.  
0.108 REF.  
0.020 REF.  
L1  
L2  
L3  
L4  
0.035  
0.020  
0.890  
1.700  
0.067  
0.043  
1.100  
10°  
0.500  
°
°
°
10  
REF  
0
0
°
.
°
1
7
7
REF.  
7
S TU/D608S  
TO251 Tube/TO-252 Tape and Reel Data  
TO-251 Tube  
" A"  
TO-252 Carrier Tape  
UNIT:р  
K0  
D1  
P0  
P1  
P2  
PACKAGE  
A0  
B0  
D0  
E
E1  
E2  
T
ӿ1.5  
TO-252  
(16 р*  
6.80  
²0.1  
2.50  
²0.1  
1.75  
0.1²  
10.3  
²0.1  
16.0  
0.3²  
7.5  
²0.15  
8.0  
²0.1  
4.0  
²0.1  
2.0  
²0.15  
0.3  
²0.05  
ӿ2  
+ 0.1  
-
0
TO-252 Reel  
S
UNIT:р  
T
N
W
R
M
H
S
G
K
V
TAPE SIZE  
REEL SIZE  
ӿ13.0  
17.0  
ӿ330  
² 0.5  
2.0  
²0.5  
ӿ97  
² 1.0  
2.2  
10.6  
16 р  
ӿ 330  
+
-
0.5  
0.2  
+ 1.5  
-
0
8

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