STM6930A [SAMHOP]
Dual N-Channel E nhancement Mode Field Effect Transistor; 双N信道E nhancement模式场效应晶体管
| 型号： | STM6930A |
| 厂家： | 
SAMHOP MICROELECTRONICS CORP. |
| 描述： | Dual N-Channel E nhancement Mode Field Effect Transistor |
| 文件： | 总7页 (文件大小：722K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
S TM6930A
S amHop Microelectronics C orp.
Aug,18 2005 ver1.3
Dual N-C hannel E nhancement Mode Field E ffect Transistor
PR ODUCT S UMMAR Y
FE ATUR E S
S uper high dense cell design for low R DS (ON).
R ugged and reliable.
VDS S
ID
R DS (ON) ( m
Ω
) Max
50 @ VG S = 10V
75 @ VG S = 4.5V
55V
4.8A
S urface Mount P ackage.
D1 D1 D2 D2
8
7
6
5
S O-8
1
1
2
3
4
S 1 G 1 S 2 G 2
ABS OLUTE MAXIMUM R ATING S (T
A
=25 C unless otherwise noted)
Limit
Unit
P arameter
S ymbol
Vspiked
Drain-S ource Voltage R ating
Drain-S ource Voltage
V
V
V
A
A
60
55
V
V
DS
G S
20
4.8
4.1
25
G ate-S ource Voltage
25 C
a
Drain C urrent-C ontinuous @ Ta
70 C
I
D
-P ulsed b
I
DM
A
A
Drain-S ource Diode Forward C urrent a
1.7
2
I
S
Ta= 25 C
Maximum P ower Dissipation a
P
D
W
C
Ta=70 C
1.44
Operating J unction and S torage
Temperature R ange
-55 to 150
TJ , TS TG
THE R MAL C HAR AC TE R IS TIC S
Thermal R esistance, J unction-to-Ambient a
C
/W
R
J A
62.5
1
S TM6930A
E LE C T R IC AL C HAR AC T E R IS T IC S (T
A
25 C unless otherwise noted)
C
Typ Max
P arameter
C ondition
Min
Unit
S ymbol
5
OFF C HAR AC TE R IS TIC S
V
G S 0V, I
=
D 250uA
=
Drain-S ource Breakdown Voltage
55
V
BVDS S
uA
nA
I
I
DS S
G S S
V
V
DS 44V, VG S 0V
Zero G ate Voltage Drain C urrent
G ate-Body Leakage
1
=
=
G S
20V, VDS 0V
=
100
=
b
ON C HAR AC TE R IS TIC S
V
G S (th)
2.5
1.8
V
G ate Threshold Voltage
V
V
V
V
V
DS =VG S , I
= 250uA
D
1.0
20
38
50
m ohm
m ohm
=
=
G S 10V, I
G S =4.5V, I
DS = 5V, VG S = 10V
D
4.5A
Drain-S ource On-S tate R esistance
R
DS (ON)
60
75
D
= 3A
On-S tate Drain C urrent
I
D(ON)
A
S
gFS
7
Forward Transconductance
=
=
5V, I 4.5A
DS
D
c
DYNAMIC C HAR AC TE R IS TIC S
Input C apacitance
620
80
33
5
P
P
P
F
F
F
C
IS S
735
95
V
DS =25V, VG S = 0V
Output C apacitance
C
C
OS S
R S S
f =1.0MH
Z
35
R everse Transfer C apacitance
G ate resistance
R g
V
G S =0V, VDS = 0V, f=1.0MH
Z
ohm
c
S WITC HING C HAR AC TE R IS TIC S
Turn-On Delay Time
tD(ON)
ns
ns
ns
3.2
3.8
12
V
DD = 30V
= 4.5 A
t
r
R ise Time
10.1
I
D
tD(OFF)
V
R
G S = 10V
G E N = 6 ohm
Turn-Off Delay Time
Fall Time
13.3
8.3
15.3
9.6
tf
ns
Total G ate C harge
V
V
DS =48V, I
DS =48V, I
D
=4.5A,VGS =10V
=4.5A,VGS =4.5V
nC
nC
Q
g
12.95
7.2
15.2
8.2
D
nC
nC
Q
Q
gs
G ate-S ource C harge
G ate-Drain C harge
2.1
3.9
2.5
4.5
V
V
DS =48V, I
G S =10V
D
= 4.5 A
gd
2
S TM6930A
E LE C T R IC AL C HAR AC T E R IS T IC S (T =25 C unless otherwise noted)
A
Typ C Max
P arameter
DR AIN-S OUR C E DIODE C HAR AC T E R IS T IC S
C ondition
Min
Unit
V
S ymbol
b
Diode F orward Voltage
V
S D
V
G S = 0V, Is =1.7A
1.2
0.8
Notes
a.S urface Mounted on FR 4 Board, t 10sec.
b.P ulse Test:P ulse Width 300us, Duty C ycle 2%.
c.G uaranteed by design, not subject to production testing.
d.G uaranteed when external R g=6 ohm and tf < tf max
25
20
15
10
20
VG S =5V
-55 C
VG S =6V
VG S =10V
VG S =4.5V
16
12
8
VG S =4V
25 C
Tj=125 C
4
5
0
VG S =3V
2.5
0
0.0
1.0
2.0
3.0
4.0
5.0
6.0
0
0.5
1.0
1.5
2.0
3.0
VDS , Drain-to-S ource Voltage (V)
VG S , G ate-to-S ource Voltage (V)
Figure 1. Output C haracteristics
Figure 2. Transfer C haracteristics
1.6
1.4
900
V
I
G S =10V
=4.5A
750
600
450
D
C iss
1.2
1.0
0.8
0.6
0
300
150
0
C oss
C rss
-50
0
25 50
100
-25
75
125 150
Tj=( C )
0
5
10
15
20
25
30
ID, Drain C urrent(A)
VDS , Drain-to S ource Voltage (V)
Figure 4. On-R esistance Variation with
Drain C urrent and Temperature
Figure 3. C apacitance
3
S T M6930A
1.15
1.10
1.6
ID=250uA
V
DS =V G S
1.4
1.2
1.0
0.8
I
D=250uA
1.05
1.00
0.95
0.90
0.85
0.6
0.4
-50 -25
0
25 50 75 100 125 150
-50 -25
0
25 50
75 100 125 150
T j, J unction T emperature ( C )
T j, J unction T emperature ( C )
F igure 6. B reakdown V oltage V ariation
with T emperature
F igure 5. G ate T hreshold V ariation
with T emperature
15
20.0
12
10.0
9
6
3
V
DS =5V
15
0
1.0
0
5
10
20
0.4
0.6
0.8
1.0
1.2
1.4
IDS , Drain-S ource C urrent (A)
V S D, B ody Diode F orward V oltage (V )
F igure 7. T ransconductance V ariation
with Drain C urrent
F igure 8. B ody Diode F orward V oltage
V ariation with S ource C urrent
40
10
V
DS =48V
t
i
m
i
I
D
=4.5A
L
)
N
8
6
4
10
1
1
O
(
0
m
R DS
s
1
0
0
m
s
1
s
1
D
C
V
G S =10V
0.1
2
0
S ingle P ulse
T
A=25 C
0.03
0.1
1
10 30
60
0
3
6
9
12 15 18 21 24
Qg, T otal G ate C harge (nC )
V
DS , Drain-S ource V oltage (V )
F igure 10. Maximum S afe
Operating Area
F igure 9. G ate C harge
4
S TM6930A
VDD
on
t
toff
d(off)
t
r
t
d(on)
t
R L
f
t
5
V IN
90%
10%
90%
D
OUT
V
OUT
V
V
10%
VG S
INVE R TE D
R G E N
G
90%
50%
50%
S
IN
10%
P ULS E WIDTH
Figure 12. S witching Waveforms
Figure 11. S witching Test C ircuit
10
1
0.5
0.2
0.1
DM
P
0.05
0.02
1
t
0.1
2
t
1. R thJ A (t)=r (t) * R thJ A
0.01
th
2. R J A=S ee Datasheet
3. TJ M-TA = P DM* R thJ A (t)
4. Duty C ycle, D=t1/t2
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Square Wave Pulse Duration(sec)
Normalized Thermal Transient Impedance Curve
5
S TM6930A
PAC KAG E OUTLINE DIME NS IONS
S O-8
1
L
E
D
0.015X45°
0.008
TYP.
e
B
0.016 TYP.
0.05 TYP.
H
MILLIME TE R S
INC HE S
S YMBOLS
MIN
MAX
MIN
0.053
0.004
0.189
0.150
0.228
0.016
0°
MAX
0.069
0.010
0.196
0.157
A
A1
D
E
1.75
0.25
4.98
3.99
6.20
1.27
8°
1.35
0.10
4.80
3.81
5.79
0.41
0°
H
0.244
0.050
8°
L
6
S TM6930A
SO-8 Tape and Reel Data
SO-8 Carrier Tape
unit:㎜
A0
E2
P2
B0
D0
D1
E
E1
P0
8.0
P1
4.0
T
K0
PACKAGE
ψ1.5
+ 0.1
- 0.0
SOP 8N
150㏕
ψ1.5
(MIN)
5.5
±0.05
0.3
±0.05
12.0
±0.3
2.0
±0.05
5.20
2.10
1.75
6.40
SO-8 Reel
UNIT:㎜
REEL SIZE
H
K
R
TAPE SIZE
M
N
W1
G
S
W
V
2.0
±0.15
62
±1.5
12.4
+ 0.2
330
± 1
16.8
- 0.4
ψ12.75
+ 0.15
12 ㎜
ψ330
7
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