STM6960 [SAMHOP]
Dual N-Channel Enhancement Mode Field Effect Transistor; 双N沟道增强型场效应晶体管
| 型号： | STM6960 |
| 厂家： | 
SAMHOP MICROELECTRONICS CORP. |
| 描述： | Dual N-Channel Enhancement Mode Field Effect Transistor |
| 文件： | 总7页 (文件大小：526K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STM6960
SamHop Microelectronics Corp.
Nov 12 2007 Ver1.1
Dual N-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
VDSS
ID
RDS(ON) ( m
Ω
) Max
60 @ VGS = 10V
75 @ VGS = 4.5V
60V
5A
Surface Mount Package.
D1
8
D1 D2 D2
7
6
5
SO-8
1
1
2
3
4
S1
G1 S2
G2
ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise noted)
Limit
Unit
V
Parameter
Symbol
Drain-Source Voltage
60
VDS
20
VGS
V
Gate-Source Voltage
5
25 C
70 C
Drain Current-Continuous a @Ta
A
A
I
D
4.3
-Pulsed b
I
DM
25
A
A
a
Drain-Source Diode Forward Current
1.7
I
S
Ta= 25 C
Ta=70 C
2
Maximum Power Dissipation a
P
D
W
C
1.44
Operating Junction and Storage
Temperature Range
T
R
J, TSTG
-55 to 150
62.5
THERMAL CHARACTERISTICS
a
Thermal Resistance, Junction-to-Ambient
C
/W
JA
1
STM6960
ELECTRICAL CHARACTERISTICS (T
A
25 C unless otherwise noted)
C
Typ
Max
Parameter
Condition
Min
Unit
Symbol
5
OFF CHARACTERISTICS
VGS
0V, ID
250uA
Drain-Source Breakdown Voltage
60
V
BVDSS
uA
nA
I
DSS
GSS
V
DS
GS
48V, VGS 0V
20V, VDS 0V
Zero Gate Voltage Drain Current
Gate-Body Leakage
1
V
I
100
b
ON CHARACTERISTICS
1.0
20
1.8
V
GS(th)
3.0
60
75
V
Gate Threshold Voltage
V
DS
V
GS, I
D
= 250uA
m ohm
m ohm
47
55
V
V
V
V
GS 10V, I
D
4.5A
3A
Drain-Source On-State Resistance
R
DS(ON)
GS 4.5V, I
D
DS = 5V, VGS = 10V
DS 5V, I 4.5A
On-State Drain Current
ID(ON)
A
S
gFS
12
Forward Transconductance
D
c
DYNAMIC CHARACTERISTICS
Input Capacitance
700
80
50
5
P
F
C
ISS
V
DS =25V, VGS = 0V
P
F
F
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
COSS
f =1.0MH
Z
CRSS
P
Rg
V
GS =0V, VDS = 0V, f=1.0MH
Z
ohm
c
SWITCHING CHARACTERISTICS
Turn-On Delay Time
t
D(ON)
ns
ns
ns
13
10
28
7
V
DD = 30V
= 4.5 A
t
Rise Time
ID
tD(OFF)
V
R
GS = 10V
GEN = 3 ohm
Turn-Off Delay Time
Fall Time
t
ns
Total Gate Charge
V
DS =48V, I
D
=4.5A,VGS =10V
=4.5A,VGS =4.5V
nC
nC
Qg
15
7.5
V
DS =48V, I
D
nC
nC
Q
gs
Gate-Source Charge
Gate-Drain Charge
1.6
4.3
V
V
DS =48V, I
GS =10V
D
= 4.5 A
Q
gd
2
S TM6960
E LE C T R IC AL C HAR AC T E R IS T IC S (T =25 C unless otherwise noted)
A
Typ C Max
P arameter
DR AIN-S OUR C E DIODE C HAR AC T E R IS T IC S
C ondition
Min
Unit
V
S ymbol
b
Diode F orward Voltage
V
S D
V
G S = 0V, Is =1.7A
1.2
0.8
Notes
a.S urface Mounted on FR 4 Board, t 10sec.
b.P ulse Test:P ulse Width 300us, Duty C ycle 2%.
c.G uaranteed by design, not subject to production testing.
15
12
9
15
VG S =4.5V
-55 C
25 C
12
9
VG S =10V
VG S =4V
VG S =3.5V
6
6
3
3
Tj=125 C
VG S =3V
2.5
0
0.0
0
0.8
1.6
2.4
3.2
4.0
4.8
0
0.5
1.0
1.5
2.0
3.0
VDS , Drain-to-S ource Voltage (V)
VG S , G ate-to-S ource Voltage (V)
Figure 1. Output C haracteristics
Figure 2. Transfer C haracteristics
90
2.0
1.8
1.6
1.4
1.2
1.0
0
75
60
VG S =4.5V
VG S =10V
V
I
G S =10V
=4.5A
D
45
30
V
G S =4.5V
=3A
I
D
15
1
1
3
6
9
12
15
0
150
25
50
75
100
125
Tj( C )
ID, Drain C urrent (A)
T j, J unction T emperature ( C )
Figure 3. On-R esistance vs. Drain C urrent
and G ate Voltage
Figure 4. On-R esistance Variation with
Drain C urrent and Temperature
3
S TM6960
1.15
1.10
1.3
ID=250uA
V
DS =V G S
1.2
I
D=250uA
1.1
1.0
0.9
1.05
1.00
0.95
0.90
0.85
0.8
0.7
0.6
6
0
-50
25 50
-25
125 150
75 100
-50 -25
0
25 50 75 100 125 150
T j, J unction T emperature ( C )
T j, J unction T emperature ( C )
F igure 6. B reakdown V oltage V ariation
with T emperature
F igure 5. G ate T hreshold V ariation
with T emperature
180
20.0
ID=4.5A
150
120
25 C
10.0
125 C
25 C
5.0
90
60
75 C
75 C
30
0
125 C
1.0
0
2
4
6
8
10
0
0.3
0.6
0.9
1.2
1.5
VG S , G ate-S ource Voltage (V)
V
S D, B ody Diode F orward V oltage (V )
Figure 7. On-R esistance vs.
G ate-S ource Voltage
F igure 8. B ody Diode F orward V oltage
V ariation with S ource C urrent
4
S TM6960
10
8
1200
V
I
DS =48V
=4.5A
1000
800
D
C iss
6
600
4
400
200
2
0
6
C oss
C rss
0
0
5
10
15
20
25
30
6
0
2
4
8
10
12 14 16
Qg, T otal G ate C harge (nC )
VDS , Drain-to S ource Voltage (V)
F igure 10. G ate C harge
Figure 9. C apacitance
50
600
30
10
t
i
m
i
L
)
N
1
0
O
(
m
s
R DS
100
60
1
Tr
0
0
m
s
Tf
1
s
1
10
D
C
0.1
V
G S =10V
S ingle P ulse
=25 C
V DS =30V ,ID=4.5A
V G S =10V
1
T
A
0.03
600
1
6
10
60 100 300
0.1
1
10
60
V
DS , Drain-S ource V oltage (V )
R g, G ate R esistance (
Ω
)
F igure 12. Maximum S afe
Operating Area
F igure 11.switching characteristics
9
1
0.5
0.2
0.1
DM
P
0.1
0.05
1
t
2
t
0.02
0.01
1. R thJ A (t)=r (t) * R thJ A
th
2. R J A=S ee Datasheet
3. TJ M-TA = P DM* R thJ A (t)
4. Duty C ycle, D=t1/t2
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Square Wave Pulse Duration(sec)
Normalized Thermal Transient Impedance Curve
5
S TM6960
PAC KAG E OUTLINE DIME NS IONS
S O-8
1
L
E
D
0.015X45°
0.008
TYP.
e
B
0.016 TYP.
0.05 TYP.
H
MILLIME TE R S
INC HE S
S YMBOLS
MIN
MAX
MIN
0.053
0.004
0.189
0.150
0.228
0.016
0°
MAX
0.069
0.010
0.196
0.157
A
A1
D
E
1.75
0.25
4.98
3.99
6.20
1.27
8°
1.35
0.10
4.80
3.81
5.79
0.41
0°
H
0.244
0.050
8°
L
6
S TM6960
SO-8 Tape and Reel Data
SO-8 Carrier Tape
unit:㎜
A0
E2
P2
B0
D0
D1
E
E1
P0
8.0
P1
4.0
T
K0
PACKAGE
ψ1.5
+ 0.1
- 0.0
SOP 8N
150㏕
ψ1.5
(MIN)
5.5
±0.05
0.3
±0.05
12.0
±0.3
2.0
±0.05
5.20
2.10
1.75
6.40
SO-8 Reel
UNIT:㎜
REEL SIZE
H
K
R
TAPE SIZE
M
N
W1
G
S
W
V
2.0
±0.15
62
±1.5
12.4
+ 0.2
330
± 1
16.8
- 0.4
ψ12.75
+ 0.15
12 ㎜
ψ330
7
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