SDU40N03 [SAMHOP]
N-Channel Logic Level E nhancement Mode F ield E ffect Transistor; N沟道逻辑E级nhancement模式F屈服ê ffect晶体管
| 型号： | SDU40N03 |
| 厂家： | 
SAMHOP MICROELECTRONICS CORP. |
| 描述： | N-Channel Logic Level E nhancement Mode F ield E ffect Transistor |
| 文件： | 总5页 (文件大小：386K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
S DU/D40N03L
S amHop Microelectronics C orp.
August , 2002
N-C hannel Logic Level E nhancement Mode Field E ffect Transistor
PR ODUCT S UMMAR Y
FE ATUR E S
S uper high dense cell design for low R DS (ON).
R ugged and reliable.
VDS S
ID
R DS (ON) ( m
Ω
) TYP
9 @ VG S = 10V
30V
40A
TO-252 and TO-251 P ackage.
13 @ VG S = 4.5V
D
D
G
S
G
S DU S E R IE S
TO-252AA(D-P AK)
S DD S E R IE S
TO-251(l-P AK)
S
ABS OLUTE MAXIMUM R ATING S (T =25 C unless otherwise noted)
C
Limit
30
Unit
V
P arameter
S ymbol
Drain-S ource Voltage
V
V
DS
G S
V
G ate-S ource Voltage
20
I
D
40
A
Drain C urrent-C ontinuous @ TJ =125 C
a
-P ulsed
120
I
DM
A
Drain-S ource Diode Forward C urrent
40
I
S
A
50
W
Maximum P ower Dissipation
@ Tc=25 C
P
D
Derate above 25 C
0.3
W / C
Operating and S torage Temperature R ange
T
J
, TS TG
-55 to 175
C
THE R MAL C HAR AC TE R IS TIC S
Thermal R esistance, J unction-to-C ase
C/W
C/W
R
J C
J A
3
50
Thermal R esistance, J unction-to-Ambient
R
1
S DU/D40N03L
E LE C T R IC AL C HAR AC T E R IS T IC S (T =25 C unless otherwise noted)
C
Typ Max
P arameter
C ondition
Min
Unit
S ymbol
OFF C HAR AC TE R IS TIC S
V
G S = 0V, I = 250uA
D
Drain-S ource Breakdown Voltage
30
V
BVDS S
uA
nA
I
I
DS S
G S S
V
V
DS = 24V, VGS = 0V
20V, VDS = 0V
Zero G ate Voltage Drain C urrent
G ate-Body Leakage
10
G S
=
100
a
ON C HAR AC TE R IS TIC S
V
G S (th)
1
1.5
9
3
V
G ate Threshold Voltage
V
V
DS = VG S , I
D
= 250uA
=20A
G S = 10V, I
D
10
16
m ohm
m ohm
R
DS (ON)
Drain-S ource On-S tate R esistance
V
G S = 4.5V, I
D
= 10A
13
V
V
DS = 10V, VG S = 10V
= 20A
On-S tate Drain C urrent
I
D(ON)
A
S
40
gFS
Forward Transconductance
DS = 10V, I
D
30
b
DYNAMIC C HAR AC TE R IS TIC S
Input C apacitance
P
P
P
F
F
F
1375
670
C
IS S
V
DD =15V, VG S = 0V
Output C apacitance
C
C
OS S
R S S
f = 1.0MH
Z
R everse Transfer C apacitance
200
S WITC HING C HAR AC TE R IS TIC S b
Turn-On Delay Time
t
D(ON)
ns
ns
ns
ns
nC
30
32
V
DD = 15V,
=1A,
G S = 10V,
G E N = 6
I
D
R ise Time
tr
V
R
Turn-Off Delay Time
Fall time
tD(OFF)
132
ohm
tf
30
40
50
V
V
DS = 10V,I
DS = 10V,I
D
D
= 40A,VG S =10V
= 40A,VG S =4.5V
Q
g
Total G ate C harge
23.5
19.5
8.2
nC
nC
G ate-S ource C harge
G ate-Drain C harge
Q
Q
gs
V
V
DS = 10V, I
G S =10V
D
= 40A,
gd
5.3
nC
2
S DU/D40N03L
E LE C T R IC AL C HAR AC T E R IS T IC S (T =25 C unless otherwise noted)
C
Typ Max
1.3
P arameter
DR AIN-S OUR C E DIODE C HAR AC T E R IS T IC S
C ondition
Min
Unit
V
S ymbol
a
Diode F orward Voltage
V
S D
V
G S = 0V, Is = 25A
6
Notes
a.P ulse Test:P ulse Width 300us, Duty C ycle 2%.
b.G uaranteed by design, not subject to production testing.
40
40
30
25 C
VG S =10,9,8,7,6,5V
35
30
Tj=125 C
25
20
15
10
VG S =4V
20
10
-55 C
5
0
0
0
1
2
3
4
5
6
0
0.5
1
1.5
2
2.5
3
VG S , G ate-to-S ource Voltage (V)
VDS , Drain-to-S ource Voltage (V)
Figure 1. Output C haracteristics
Figure 2. Transfer C haracteristics
1.3
1.2
1.1
1.0
0.9
0.8
0.7
3600
VG S =10V
3000
2400
1800
Tj=125 C
25 C
C iss
-55 C
1200
600
0
C oss
C rss
0
10
20
30
40
0
5
10
15
20
25
30
VDS , Drain-to S ource Voltage (V)
ID, Drain C urrent(A)
Figure 3. C apacitance
Figure 4. On-R esistance Variation with
Drain C urrent and Temperature
3
S DU/D40N03L
1.15
1.10
1.15
V
DS =V G S
ID=250uA
1.10
I
D=250uA
1.05
1.00
0.95
0.90
1.05
1.00
0.95
0.90
0.85
0.85
0.80
6
-50 -25
0
25 50
75 100 125 150
-50 -25
0
25 50 75 100 125 150
T j, J unction T emperature ( C )
T j, J unction T emperature ( C )
F igure 6. B reakdown V oltage V ariation
with T emperature
F igure 5. G ate T hreshold V ariation
with T emperature
40
60
V
DS =10V
50
40
30
10
1.0
0.1
20
10
0
0.4
0.6
0.8
1.0
1.2
1.4
0
5
10
15
20
IDS , Drain-S ource C urrent (A)
V S D, B ody Diode F orward V oltage (V )
F igure 7. T ransconductance V ariation
with Drain C urrent
F igure 8. B ody Diode F orward V oltage
V ariation with S ource C urrent
300
200
10
V
DS =10V
100
8
6
I
D=40A
1
m
s
t
i
m
i
1
L
0
)
m
N
s
O
(
1
1
R DS
0
0
m
s
10
s
D
C
4
V
G S =10V
2
0
S ingle P ulse
T c=25 C
1
0.5
0.1
1
10
30 60
0
5
10 15 20 25 30 35 40
Qg, T otal G ate C harge (nC )
V DS , Drain-S ource V oltage (V )
F igure 10. Maximum S afe
Operating Area
F igure 9. G ate C harge
4
S DU/D40N03L
VDD
on
t
toff
d(off)
t
r
t
d(on)
t
R L
f
t
V IN
90%
10%
90%
D
OUT
V
OUT
V
V
VG S
10%
INVE R TE D
R G E N
G
6
90%
50%
50%
S
IN
10%
P ULS E WIDTH
Figure 12. S witching Waveforms
Figure 11. S witching Test C ircuit
2
1
D=0.5
0.2
0.1
DM
P
0.1
0.05
1
t
2
t
0.02
0.01
1. R θ J A (t)=r (t) * R θ J A
2. R θ J A=S ee Datasheet
3. TJ M-TA = P DM* R θ J A (t)
4. Duty C ycle, D=t1/t2
S ING LE P ULS E
10-4
0.01
10-5
10-3
10-2
10-1
1
10
S quare Wave P ulse Duration (sec)
Figure 13. Normalized Thermal Transient Impedance C urve
5
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