SDU9435A [SAMHOP]
P - Channel E nhancement Mode F ield E ffect Transistor; P - 信道E nhancement模式F屈服ê ffect晶体管
| 型号： | SDU9435A |
| 厂家： | 
SAMHOP MICROELECTRONICS CORP. |
| 描述： | P - Channel E nhancement Mode F ield E ffect Transistor |
| 文件： | 总5页 (文件大小：395K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
S DU9435A
S amHop Microelectronics C orp.
August , 2002
P -C hannel E nhancement Mode Field E ffect Transistor
PR ODUCT S UMMAR Y
FE ATUR E S
S uper high dense cell design for low R DS (ON).
R ugged and reliable.
R DS (ON) ( m
Ω
) TYP
VDS S
ID
40 @ VG S = -10V
67 @ VG S = -4.5V
-30V
-10A
TO-252 P ackage.
D
D
G
S
G
S DU S E R IE S
TO-252AA(D-P AK)
S
ABS OLUTE MAXIMUM R ATING S (T
C
=25 C unless otherwise noted)
Limit
Unit
V
P arameter
S ymbol
Drain-S ource Voltage
-30
V
V
DS
G S
V
G ate-S ource Voltage
20
I
D
-10
-30
A
Drain C urrent-C ontinuous @ TJ =125 C
a
-P ulsed
I
DM
A
Drain-S ource Diode Forward C urrent
1.9
2.5
I
S
A
Maximum P ower Dissipation
@ Tc=25 C
W
C
P
D
Derate above 25 C
Operating and S torage Temperature R ange
T
J , TS TG
-55 to 150
THE R MAL C HAR AC TE R IS TIC S
Thermal R esistance, J unction-to-C ase
C/W
C/W
R
J C
J A
3
50
Thermal R esistance, J unction-to-Ambient
R
1
S DU9435A
E LE C T R IC AL C HAR AC T E R IS T IC S (T
C
25 C unless otherwise noted)
=
Typ C Max
P arameter
C ondition
Min
Unit
S ymbol
OFF C HAR AC TE R IS TIC S
5
V
G S 0V, I
=
D -250uA
=
Drain-S ource Breakdown Voltage
-30
V
BVDS S
uA
nA
I
I
DS S
G S S
V
V
DS -24V, VG S 0V
Zero G ate Voltage Drain C urrent
G ate-Body Leakage
-1
=
=
G S
20V, VDS 0V
=
100
=
b
ON C HAR AC TE R IS TIC S
V
G S (th)
-1
-1.5
40
-3
V
G ate Threshold Voltage
V
DS =VG S , I
= -250uA
D
m-ohm
m-ohm
50
90
=
=
-5.3A
V
V
V
V
G S -10V, I
D
Drain-S ource On-S tate R esistance
R
DS (ON)
67
G S = -4.5V, I
D
= -4.2A
DS = -5V, VG S = -10V
On-S tate Drain C urrent
I
D(ON)
A
S
-20
gFS
9
Forward Transconductance
=
DS -15V, I - 5.3A
=
D
c
DYNAMIC C HAR AC TE R IS TIC S
Input C apacitance
P
P
P
F
F
F
860
470
180
C
IS S
V
DS =-15V, VG S = 0V
Output C apacitance
C
C
OS S
R S S
f =1.0MH
Z
R everse Transfer C apacitance
S WITC HING C HAR AC TE R IS TIC S c
Turn-On Delay Time
t
D(ON)
20
40
ns
ns
9
V = -15V,
D
I
D
= -1A,
R ise Time
tr
10
37
23
V
R
G E N = - 10V,
G E N = 6 -ohm
Turn-Off Delay Time
Fall Time
tD(OFF)
ns
90
tf
110
ns
nC
nC
nC
nC
15
20
V
V
DS =-15V,I
DS =-15V,I
D
= -5.3A,VG S =-10V
= -5.3A,VGS =-4.5V
Q
g
Total G ate C harge
10.5
D
8.6
G ate-S ource C harge
G ate-Drain C harge
Q
Q
gs
3
4
V
V
DS =-15V, I
G S =-10V
D
= -5.3A,
gd
2
S DU9435A
E LE C T R IC AL C HAR AC T E R IS T IC S (T =25 C unless otherwise noted)
C
C
Typ Max
P arameter
DR AIN-S OUR C E DIODE C HAR AC T E R IS T IC S
C ondition
Min
Unit
V
S ymbol
b
5
Diode F orward Voltage
V
S D
V
G S = 0V, Is =-5.3A
-1.3
-0.84
Notes
a.P ulse Test:P ulse Width 300us, Duty C ycle 2%.
b.G uaranteed by design, not subject to production testing.
20
16
12
8
25
6V
-55 C
25 C
-VG S =10,9,8,7V
20
Tj=125 C
5V
15
10
4V
5
4
0
3V
0
0
0.5
1
1.5
2
2.5
3
0
0.5
1.0
1.5
2.0
2.5
3.0
-VG S , G ate-to-S ource Voltage (V)
-VDS , Drain-to-S ource Voltage (V)
Figure 1. Output C haracteristics
Figure 2. Transfer C haracteristics
1.8
1.6
1.4
1.2
3000
2500
2000
VG S =-10V
ID=-5.3A
1500
1000
C iss
1.0
0.8
C oss
C rss
500
0
0.6
-50
0
50
100
150
0
5
10
15
20
25
30
T j, J unction T emperature ( C )
-VDS , Drain-to S ource Voltage (V)
Figure 4. On-R esistance Variation with
Temperature
Figure 3. C apacitance
3
S DU9435A
1.15
1.09
ID=-250uA
V
DS =V G S
=-250uA
1.06
1.03
1.10
1.05
1.00
I
D
1.00
0.97
5
0.95
0.94
0.91
0.90
0.85
-50 -25
0
25 50 75 100 125 150
-50 -25
0
25 50
75 100 125 150
T j, J unction T emperature ( C )
T j, J unction T emperature ( C )
F igure 6. B reakdown V oltage V ariation
with T emperature
F igure 5. G ate T hreshold V ariation
with T emperature
15
12
9
20.0
V
G S =0V
10.0
6
3
V
DS =-15V
15
1.0
0
0
5
10
20
0.4
0.6
0.7
0.9
1.1
1.3
-IDS , Drain-S ource C urrent (A)
-V S D, B ody Diode F orward V oltage (V )
F igure 7. T ransconductance V ariation
with Drain C urrent
F igure 8. B ody Diode F orward V oltage
V ariation with S ource C urrent
10
50
V
DS =-15V
t
i
m
i
8
6
4
L
1
10
1
)
0
m
I
D=-5.3A
N
s
O
(
R DS
1
1
0
s
0
m
s
D
C
0.1
V
G S =-10V
2
0
S ingle P ulse
=25 C
T
A
0.03
0.1
1
10
30 50
0
2
4
6
8
10
12 14
16
Qg, T otal G ate C harge (nC )
-V DS , Drain-S ource V oltage (V )
F igure 10. Maximum S afe
Operating Area
F igure 9. G ate C harge
4
S DU9435A
-VDD
on
t
toff
d(off)
t
r
t
d(on)
t
R L
f
t
V IN
90%
10%
90%
D
OUT
V
OUT
V
V
10%
VG S
R G E N
6
G
90%
50%
50%
S
IN
10%
INVE R TE D
P ULS E WIDTH
Figure 12. S witching Waveforms
Figure 11. S witching Test C ircuit
2
1
D=0.5
0.2
0.1
DM
P
0.1
0.05
1
t
2
t
0.02
0.01
1. R θ J A (t)=r (t) * R θ J A
2. R θ J A=S ee Datasheet
3. TJ M-TA = P DM* R θ J A (t)
4. Duty C ycle, D=t1/t2
S ING LE P ULS E
10-4
0.01
10-5
10-3
10-2
10-1
1
10
S quare Wave P ulse Duration (sec)
Figure 13. Normalized Thermal Transient Impedance C urve
5
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