RSB12JS2_11 [ROHM]

Low Capacitance Protection Device; 低电容保护装置
RSB12JS2_11
型号: RSB12JS2_11
厂家: ROHM    ROHM
描述:

Low Capacitance Protection Device
低电容保护装置

装置
文件: 总3页 (文件大小:992K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Data Sheet  
Low Capacitance Protection Device  
RSB12JS2  
Applications  
DimensionsUnit : mm)  
Land size figure(Unit : mm)  
ESD Protection  
1.0  
0.5 0.5  
1.6±0.1  
0.22±0.05  
0.13±0.05  
(6)  
(5)  
(4)  
Features  
0.3  
0.15 0.15  
0.25  
0.25  
1) Ultra small mold type. (EMD6)  
2) Low capacitance  
3) Bi direction  
0~0.1  
0.4  
EMD6  
(1)  
(2)  
(3)  
0.5  
0.5  
Construction  
1.0±0.1  
0.5±0.05  
(6)(5) (4)  
Silicon Epitaxial Planar  
Structure  
ROHM : EMD6  
JEITA : SC-75A Size  
dot (year week factory)  
(1) (2) (3)  
Please make 3 and 6 Pin open in circuit upon use.  
Taping specificationsUnit : mm)  
+0.1  
2.0 0.05  
4.0 0.1  
φ1.5  
0.3 0.1  
0  
φ0.8 0.1  
1PIN  
4.0 0.1  
1.7 0.05  
0.65 0.1  
Absolute maximum ratings (Ta=25°C)  
Parameter  
Power dissipation  
Limits  
150  
Symbol  
P
Unit  
mW  
°C  
Junction temperature  
Storage temperature  
150  
Tj  
55 to 150  
Tstg  
°C  
Electrical characteristic (Ta=25°C)(Rating of per diode)  
Parameter  
Conditions  
Symbol  
Min.  
Typ.  
Max.  
Unit  
V
Zener voltage  
VZ  
IR  
9.6  
-
-
14.4  
0.10  
-
IZ=5mA  
Reverse current  
-
-
μA  
pF  
VR=9V  
Capacitance between terminals  
Ct  
f=1MHz,VR=0V  
1
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2011.04 - Rev.C  
© 2011 ROHM Co., Ltd. All rights reserved.  
1/2  
Data Sheet  
RSB12JS2  
Electrical characteristics curve  
10000  
1000  
100  
10  
10  
Ta=150℃ Ta=125℃  
f=1MHz  
1
0.1  
Ta=25℃  
Ta=75℃  
Ta=125℃  
Ta=150℃  
Ta=75℃  
Ta=25℃  
Ta=-25℃  
10  
1
1
Ta=-25℃  
0.1  
0.01  
0.001  
0.01  
0.001  
0.0001  
0.1  
12  
13  
14  
15  
16  
17  
0
1
2
3
4
5
6
7
8
9
0
1
2
3
4
5
6
7
8
9
ZENER VOLTAGE:Vz(V)  
Vz-Iz CHARACTERISTICS  
REVERSE VOLTAGE:VR(V)  
VR-IR CHARACTERISTICS  
REVERSE VOLTAGE:VR(V)  
VR-Ct CHARACTERISTICS  
10  
1.5  
1.4  
1.3  
1.2  
1.1  
1
13.8  
13.7  
13.6  
13.5  
13.4  
13.3  
Ta=25℃  
IZ=5mA  
n=30pcs  
Ta=25℃  
f=1MHz  
VR=0V  
Ta=25℃  
VR=9V  
n=30pcs  
9
8
7
6
5
4
3
2
1
0
n=10pcs  
0.9  
0.8  
0.7  
0.6  
0.5  
AVE:0.996pF  
AVE:13.572V  
AVE:0.3089nA  
Vz DISRESION MAP  
Ct DISRESION MAP  
IR DISRESION MAP  
1000  
100  
10  
1
Rth(j-a)  
Rth(j-c)  
100  
10  
1
Mounted on epoxy board  
IM=10mA  
IF=100mA  
time  
1ms  
300us  
0.1  
1
10  
0.001 0.01  
0.1  
1
10  
100 1000  
TIME:t(s)  
Rth-t CHARACTERISTICS  
ZENER CURRENT(mA)  
Zz-Iz CHARACTERISTICS  
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© 2011 ROHM Co., Ltd. All rights reserved.  
2011.04 - Rev.C  
2/2  
Notice  
N o t e s  
Thank you for your accessing to ROHM product informations.  
More detail product informations and catalogs are available, please contact us.  
ROHM Customer Support System  
http://www.rohm.com/contact/  
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© 2011 ROHM Co., Ltd. All rights reserved.  
R1120A  

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