RSB12W_11 [ROHM]

Low Capacitance Protection Device; 低电容保护装置
RSB12W_11
型号: RSB12W_11
厂家: ROHM    ROHM
描述:

Low Capacitance Protection Device
低电容保护装置

装置
文件: 总3页 (文件大小:1043K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Data Sheet  
Low Capacitance Protection Device  
RSB12W  
Applications  
Dimensions(Unit : mm)  
Land size figure(Unit : mm)  
ESD Protection  
1.0  
0.5  
0.5  
1.6±0.2  
0.3±0.1  
ꢀꢀꢀ 0.05  
0.15±0.05  
(3)  
Features  
0.7  
1)Ultra small mold type.(EMD3)  
2)Low capacitance  
3)Bi direction  
0~0.1  
0.6  
0.6  
(1)  
(2)  
0.2±0.1  
ꢀꢀ-0.05  
EMD3  
0.55±0.1  
0.7±0.1  
0.5  
1.0±0.1  
0.5  
Construction  
Silicon epitaxial planer  
Structure  
ROHM : EMD3  
JEDEC : SOT-416  
JEITA : SC-75A  
dot(year week factory)  
Taping specifications(Unit : mm)  
φ1.50.1  
2.0±0.05  
0.3±0.1  
4.0±0.1  
0  
1.8±0.1  
φ0.5±0.1  
0.9±0.2  
Absolute maximum ratings (Ta=25°C)  
Parameter  
Power dissipation  
Limits  
Symbol  
P
Unit  
150  
150  
mW  
°C  
Junction temperature  
Storage temperature  
Tj  
55 to 150  
Tstg  
°C  
Electrical characteristics (Ta=25°C)  
Parameter  
Zener voltage  
Symbol  
Min.  
Typ.  
Max.  
14.4  
0.10  
-
Unit  
V
Conditions  
VZ  
IR  
9.6  
-
-
IZ=5mA  
VR=9V  
Reverse current  
-
-
μA  
pF  
Capacitance between terminals  
Ct  
f=1MHz,VR=0V  
1
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2011.04 - Rev.B  
© 2011 ROHM Co., Ltd. All rights reserved.  
1/2  
Data Sheet  
RSB12W  
Electrical characteristics curve  
10000  
1000  
100  
10  
10  
Ta=150  
Ta=125  
f=1MHz  
Ta=25  
1
Ta=75  
Ta=75  
Ta=25  
Ta=-  
10  
Ta=125  
Ta=150  
Ta=-  
0.1  
1
1
0.1  
0.01  
0.001  
0.0001  
0.01  
0.001  
0.1  
11  
12  
13  
ZENER VOLTAGE:Vz(V)  
Vz-Iz CHARACTERISTICS  
14  
15  
16  
0
1
2
3
4
5
6
7
8
9
0
1
2
3
4
5
6
7
8
9
REVERSE VOLTAGE:VR(V)  
VR-IR CHARACTERISTICS  
REVERSE VOLTAGE:VR(V)  
VR-Ct CHARACTERISTICS  
10  
1.5  
1.4  
1.3  
1.2  
1.1  
1
13.8  
13.7  
13.6  
13.5  
13.4  
13.3  
Ta=25℃  
IZ=5mA  
Ta=25℃  
VR=9V  
Ta=25℃  
f=1MHz  
VR=0V  
9
8
7
6
5
4
3
2
1
0
n=30pcs  
n=30pcs  
n=10pcs  
0.9  
0.8  
0.7  
0.6  
0.5  
AVE:0.996pF  
AVE:13.572V  
AVE:0.3089nA  
Vz DISRESION MAP  
Ct DISRESION MAP  
IR DISRESION MAP  
10000  
1000  
100  
Mounted on epoxy board  
100  
10  
1
IM=1mA  
IF=10mA  
1ms  
time  
300us  
Rth(j-  
Rth(j-  
10  
0.001  
0.1  
1
10  
0.01  
0.1 1  
TIME:t(s)  
10  
100  
1000  
ZENER CURRENT(mA)  
Zz-Iz CHARACTERISTICS  
Rth-t CHARACTERISTICS  
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© 2011 ROHM Co., Ltd. All rights reserved.  
2/2  
2011.04 - Rev.B  
Notice  
N o t e s  
Thank you for your accessing to ROHM product informations.  
More detail product informations and catalogs are available, please contact us.  
ROHM Customer Support System  
http://www.rohm.com/contact/  
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R1120A  

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