RRR035N03TL [ROHM]
Small Signal Field-Effect Transistor, 3.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TSMT3, 3 PIN;
| 型号： | RRR035N03TL |
| 厂家： | 
ROHM |
| 描述： | Small Signal Field-Effect Transistor, 3.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TSMT3, 3 PIN 开关 光电二极管 晶体管 |
| 文件： | 总5页 (文件大小：216K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
4V Drive Nch MOSFET
RRR035N03
zStructure
zDimensions (Unit : mm)
Silicon N-channel MOSFET
TSMT3
1.0MAX
2.9
0.4
0.85
0.7
(
(
)
)
3
zFeatures
1) Low on-resistance.
2) Small Surface Mount Package(TSMT3).
3) 4V drive.
( )
2
1
0.95 0.95
1.9
0.16
(1) Gate
Each lead has same dimensions
(2) Source
(3) Drain
Abbreviated symbol : UC
zApplications
Switching
zPackaging specifications
zInner circuit
Package
Taping
TL
(3)
(3)
Type
Code
Basic ordering unit (pieces)
3000
RRR035N03
∗2
(1)
(2)
(1)
∗1
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Symbol
VDSS
VGSS
ID
Limits
30
Unit
V
(2)
(1) Gate
(2) Source
(3) Drain
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
20
V
Continuous
Pulsed
3.5
A
Drain current
∗1
IDP
14
A
Source current
(Body diode)
Continuous
Pulsed
IS
0.8
A
∗1
ISP
14
A
∗2
Total power dissipation
Channel temperature
PD
1.0
W
°C
°C
Tch
150
Range of storage temperature
∗1 Pw≤10µs, Duty cycle≤1%
∗2 When mounted on a ceramic board.
Tstg
−55 to 150
zThermal resistance
Parameter
Symbol
Rth (ch-a)∗
Limits
125
Unit
Channel to ambient
∗ When mounted on a ceramic board.
°C / W
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RRR035N03
Data Sheet
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max.
Conditions
Unit
Gate-source leakage
IGSS
−
−
−
10
−
µA VGS
=
20V, VDS=0V
Drain-source breakdown voltage V(BR) DSS 30
V
ID=1mA, VGS=0V
Zero gate voltage drain current
Gate threshold voltage
IDSS
−
1.0
−
−
−
−
−
1
µA VDS=30V, VGS=0V
VGS (th)
2.5
63
84
91
−
−
−
−
−
−
−
−
−
−
−
V
VDS=10V, ID=1mA
ID=3.5A, VGS=10V
mΩ
45
60
65
−
400
65
55
10
15
30
5
Static drain-source on-state
resistance
∗
∗
RDS (on)
mΩ ID=3.5A, VGS=4.5V
mΩ
S
ID=3.5A, VGS=4V
VDS=10V, ID=3.5A
VDS=10V
VGS=0V
f=1MHz
VDD 15V, ID=1.7A,
VGS=10V
RL 8.8Ω
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Yfs
Ciss
1.7
−
−
−
−
−
−
−
−
pF
pF
pF
ns
ns
ns
ns
Coss
Crss
td (on)
∗
∗
∗
∗
∗
∗
∗
t
r
td (off)
tf
Qg
Turn-off delay time
Fall time
RG=10Ω
Total gate charge
Gate-source charge
4.5
1.5
1.4
nC VDD 15V, ID=3.5A
nC VGS=5V
Qgs
Qgd
−
−
RL 4.3Ω, RG=10Ω
Gate-drain charge
nC
∗Pulsed
zBody diode characteristics (Source-drain) (Ta=25°C)
Parameter
Symbol Min. Typ. Max.
Conditions
Unit
∗
VSD
Forward voltage
−
−
1.2
V
IS=3.5A, VGS=0V
∗Pulsed
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RRR035N03
Data Sheet
zElectrical characteristic curves
6
5
4
3
2
1
0
6
10
1
Ta=25°C
VDS= 10V
Pulsed
Pulsed
3.2V
5
3.4V
10V
4.0V
4
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= - 25°C
3.2V
3.0V
3
0.1
VGS = 3.0V
2
VGS = 2.8V
10V
0.01
0.001
4.5V
4.0V
1
Ta=25°C
Pulsed
0
0
0.2
0.4
0.6
0.8
1
0
0.5
1
1.5
2
2.5
3
0
2
4
6
8
10
10
10
DRAIN-SOURCE VOLTAGE : VDS[V]
DRAIN-SOURCE VOLTAGE : VDS[V]
GATE-SOURCE VOLTAGE : VGS[V]
Fig.3 Typical Transfer Characteristics
Fig.2 Typical output characteristics(
)
Ⅱ
Fig.1 Typical output characteristics(
)
Ⅰ
1000
100
10
1000
100
10
1000
100
10
Ta=25°C
Pulsed
VGS= 4.5V
VGS= 10V
Pulsed
Pulsed
Ta=125°C
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
Ta=75°C
Ta=25°C
Ta= -25°C
VGS= 4.0V
VGS= 4.5V
VGS= 10V
0.01
0.1
1
0.1
1
10
0.01
0.1
1
10
DRAIN-CURRENT : ID[A]
DRAIN-CURRENT : ID[A]
DRAIN-CURRENT : ID[A]
Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current(
Fig.5 Static Drain-Source On-State
Resistance vs. Drain Current(
Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current(
)
)
)
Ⅲ
Ⅰ
Ⅱ
10
1000
100
10
10
1
VGS= 4.0V
Pulsed
VDS= 10V
Pulsed
VGS=0V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
1
0.1
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
Ta= -25°C
Ta=25°C
Ta=75°C
Ta=125°C
0.1
0.01
0.01
0.1
1
10
0.01
0.1
1
0
0.5
1
1.5
DRAIN-CURRENT : ID[A]
DRAIN-CURRENT : ID[A]
SOURCE-DRAIN VOLTAGE : VSD [V]
Fig.7 Static Drain-Source On-State
Resistance vs. Drain Current(
Fig.8 Forward Transfer Admittance
vs. Drain Current
Fig.9 Reverse Drain Current
vs. Sourse-Drain Voltage
)
Ⅳ
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RRR035N03
Data Sheet
1000
100
10
200
150
100
50
10
8
Ta=25°C
Pulsed
Ta=25°C VDD= 15V
VGS=10V RG=10Ω
Pulsed
td(off)
ID= 3.5A
tf
6
ID= 1.7A
4
Ta=25°C
VDD= 15V
ID= 3.5A
RG=10Ω
Pulsed
2
tr
td(on)
1
0
0
0
0.01
0.1
1
10
5
10
15
0
2
4
6
8
10
GATE-SOURCE VOLTAGE : VGS[V]
DRAIN-CURRENT : ID[A]
Fig.11 Switching Characteristics
TOTAL GATE CHARGE : Qg [nC]
Fig.12 Dynamic Input Characteristics
Fig.10 Static Drain-Source On-State
Resistance vs. Gate Source Voltage
1000
100
10
Ciss
Coss
Crss
Ta=25°C
f=1MHz
VGS=0V
0.01
0.1
1
10
100
DRAIN-SOURCE VOLTAGE : VDS[V]
Fig.13 Typical Capacitance
vs. Drain-Source Voltage
zMeasurement circuit
Pulse Width
V
GS
ID
VDS
90%
50%
10%
50%
10%
V
GS
DS
RL
V
10%
D.U.T.
VDD
RG
90%
90%
t
d(on)
td(off)
t
r
tr
t
on
t
off
Fig.1-1 Switching Time Measurement Circuit
Fig.1-2 Switching Waveforms
V
G
V
GS
ID
VDS
Q
g
V
GS
RL
D.U.T.
I
G (Const.)
Q
gs
Qgd
V
DD
RG
Charge
Fig.2-1 Gate Charge Measurement Circuit
Fig.2-2 Gate Charge Waveform
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The content specified herein is subject to change for improvement without notice.
The content specified herein is for the purpose of introducing ROHM's products (hereinafter
"Products"). If you wish to use any such Product, please be sure to refer to the specifications,
which can be obtained from ROHM upon request.
Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
be taken into account when designing circuits for mass production.
Great care was taken in ensuring the accuracy of the information specified in this document.
However, should you incur any damage arising from any inaccuracy or misprint of such
information, ROHM shall bear no responsibility for such damage.
The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or
implicitly, any license to use or exercise intellectual property or other rights held by ROHM and
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R0039
A
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