RN152GT2R [ROHM]

Pin Diode, 30V V(BR),;
RN152GT2R
型号: RN152GT2R
厂家: ROHM    ROHM
描述:

Pin Diode, 30V V(BR),

测试 二极管
文件: 总3页 (文件大小:129K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
RN152G  
Diodes  
PIN diode (Silicon Epitaxial Planer)  
RN152G  
z Land size figure (Unit : mm)  
z External dimensions (Unit : mm)  
z Applications  
High frequency switching  
0.5  
0.13±0.03  
0.6±0.05  
z Features  
1) Ultra small mold type. (VMD2)  
2) High frequency resistance which  
is small and low capacity.  
VMD2  
z Structure  
z Construction  
Silicon epitaxial planar  
0.27±0.03  
0.5±0.05  
ROHM : VMD2  
dot (year week factory)  
z Taping dimensions (Unit : mm)  
0.18±0.05  
φ1.5+0.1  
ꢀꢀꢀꢀꢀ0  
2±0.05  
4±0.1  
φ0.5  
0.3  
0.65±0.05  
4±0.1  
2±0.05  
0.76±0.1  
z Absolute maximum ratings (Ta=25°C)  
Parameter  
Limits  
30  
Symbol  
Unit  
Reverse voltage  
VR  
V
mA  
Forward current  
IF  
100  
150  
Junction temperature  
Storage temperature  
Operation temperature  
Tj  
-55 to +150  
-55 to +150  
Tstg  
Topor  
z Electrical characteristic (Ta=25°C)  
Parameter  
Conditions  
Symbol  
Min.  
Typ.  
Max.  
1
Unit  
V
Forward voltage  
VF  
IR  
-
-
-
-
-
-
IF=10mA  
Reverse current  
-
0.1  
0.45  
4.8  
1.8  
µA  
pF  
Ω
VR=30V  
Capacitance between terminals  
Ct  
0.15  
VR=1V , f=1MHz  
IF=1mA,f=100MHz  
IF=10mA,f=100MHz  
-
-
Forward frequency resistance  
Rf  
Ω
Rev.B  
1/2  
RN152G  
Diodes  
z Electrical characteristic curves  
100  
10000  
1000  
100  
10  
10  
1
Ta=125℃  
Ta=75℃  
Ta=150℃  
f=1MHz  
Ta=150℃  
Ta=125℃  
10  
Ta=75℃  
Ta=25℃  
1
Ta=25℃  
1
Ta=-25℃  
0.1  
0.01  
0.1  
Ta=-25℃  
0.01  
0.001  
0.1  
0
100 200 300 400 500 600 700 800 900 100 110 120  
0
0
5
10  
15  
20  
25  
30  
0
10  
20  
30  
0
0
REVERSE VOLTAGE:VR(V)  
VR-Ct CHARACTERISTICS  
FORWARD VOLTAGE:VF(mV)  
VF-IF CHARACTERISTICS  
REVERSE VOLTAGE:VR(V)  
VR-IR CHARACTERISTICS  
100  
10  
1
1
860  
850  
840  
830  
820  
810  
Ta=25℃  
VR=0V  
Ta=25℃  
IF=10mA  
n=30pcs  
f=1MHz  
f=10MHz  
f=100MHz  
AVE:832.7mV  
0.1  
0.1  
0.1  
1
10  
1
10  
FREQUENCY(MHz)  
Ct-f CHARACTERISTICS  
100  
1000  
FORWARD CURRENT:IF(mA)  
rf-IF CHARACTERISTICS  
VF DISPERSION MAP  
1
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0
1
2.5  
2.4  
2.3  
2.2  
2.1  
2
Ta=25℃  
f=100MHz  
IF=1mA  
Ta=25℃  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0
Ta=25℃  
VR=30V  
n=30pcs  
f=1MHz  
VR=1V  
n=10pcs  
n=10pcs  
1.9  
1.8  
1.7  
1.6  
1.5  
AVE:0.0865nA  
AVE:0.326pF  
AVE:2.199Ω  
FORWARD CURRENT:IF(mA)  
rf DISPERSION MAP  
IR DISPERSION MAP  
Ct DISPERSION MAP  
1
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0
5
4
3
2
1
0
Ta=25℃  
f=100MHz  
IF=10mA  
n=10pcs  
AVE:2.00kV  
AVE:0.69kV  
AVE:0.601Ω  
C=200pF  
R=0Ω  
C=100pF  
R=1.5kΩ  
FORWARD CURRENT:IF(mA)  
rf DISPERSION MAP  
ESD DISPERSION MAP  
Rev.B  
2/2  
Appendix  
Notes  
No technical content pages of this document may be reproduced in any form or transmitted by any  
means without prior permission of ROHM CO.,LTD.  
The contents described herein are subject to change without notice. The specifications for the  
product described in this document are for reference only. Upon actual use, therefore, please request  
that specifications to be separately delivered.  
Application circuit diagrams and circuit constants contained herein are shown as examples of standard  
use and operation. Please pay careful attention to the peripheral conditions when designing circuits  
and deciding upon circuit constants in the set.  
Any data, including, but not limited to application circuit diagrams information, described herein  
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM  
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any  
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of  
whatsoever nature in the event of any such infringement, or arising from or connected with or related  
to the use of such devices.  
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or  
otherwise dispose of the same, no express or implied right or license to practice or commercially  
exploit any intellectual property rights or other proprietary rights owned or controlled by  
ROHM CO., LTD. is granted to any such buyer.  
Products listed in this document are no antiradiation design.  
The products listed in this document are designed to be used with ordinary electronic equipment or devices  
(such as audio visual equipment, office-automation equipment, communications devices, electrical  
appliances and electronic toys).  
Should you intend to use these products with equipment or devices which require an extremely high level of  
reliability and the malfunction of with would directly endanger human life (such as medical instruments,  
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other  
safety devices), please be sure to consult with our sales representative in advance.  
About Export Control Order in Japan  
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control  
Order in Japan.  
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)  
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.  
Appendix1-Rev1.1  

相关型号:

RN1544

Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)
TOSHIBA

RN1544-A

For use in Muting and Switching Applications
TOSHIBA

RN1544-B

TRANSISTOR 300 mA, 20 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-3L1A, SMV, 5 PIN, BIP General Purpose Small Signal
TOSHIBA

RN1544A

TRANSISTOR 300 mA, 20 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-3L1A, 5 PIN, BIP General Purpose Small Signal
TOSHIBA

RN1601

Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
TOSHIBA

RN1601-11

TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, SUPERMINI-6, BIP General Purpose Small Signal
TOSHIBA

RN1601TE85N

TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal
TOSHIBA

RN1601TE85R

TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal
TOSHIBA

RN1602

Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
TOSHIBA

RN1602(TE85L)

TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, SM6, 2-3N1A, 6 PIN, BIP General Purpose Small Signal
TOSHIBA

RN1602(TE85L,F)

PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),TSOP
TOSHIBA

RN1602TE85N

TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal
TOSHIBA