RN1544 [TOSHIBA]
Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor); 晶体管NPN硅外延式( PCT程序) (偏置电阻内置晶体管)![RN1544](http://pdffile.icpdf.com/pdf1/p00104/img/icpdf/RN1544_562490_icpdf.jpg)
型号: | RN1544 |
厂家: | ![]() |
描述: | Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) |
文件: | 总3页 (文件大小:118K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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RN1544
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)
RN1544
For use in Muting and Switching Applications.
Unit: mm
·
·
Emitter-base voltage is high: V = 25 V (max)
EBO
Incorporating a bias resistor into a transistor reduces parts count.
Reducing the parts count enable the manufacture of ever more
compact equipment and save assembly cost.
Equivalent Circuit
C
h
FE
A
B
classification
Marking
44A
44B
R1
B
E
Maximum Ratings (Ta = 25°C) (Q1, Q2 common)
JEDEC
JEITA
―
―
Characteristics
Collector-base voltage
Symbol
Rating
Unit
V
CBO
V
CEO
V
EBO
50
20
V
V
TOSHIBA
Weight:
2-3L1A
Collector-emitter voltage
Emitter-base voltage
g (typ.)
25
V
Collector current
I
300
mA
mW
°C
°C
C
5
4
Collector power dissipation
Junction temperature
Storage temperature range
P
(Note1)
300
C
T
150
j
Q1
Q2
T
-55~150
stg
Note1: Total rating
1
2
3
Equivalent Circuit
(top view)
1
2002-01-29
RN1544
Electrical Characteristics (Ta = 25°C) (Q1, Q2 common)
Characteristics
Collector cut-off current
Symbol
Test Condition
= 50 V, I = 0
Min
Typ.
Max
Unit
I
V
V
¾
¾
¾
¾
100
100
nA
nA
CBO
CB
EB
E
Emitter cut-off current
I
= 25 V, I = 0
C
EBO
h
FE
DC current gain
V
= 2 V, I = 4 mA
200
¾
1200
CE
C
(Note2)
Collector-emitter saturation voltage
Transition frequency
V
I
= 10 mA, I = 1 mA
¾
¾
¾
30
¾
0.1
¾
V
MHz
pF
CE (sat)
C
B
f
V
V
= 6 V, I = 4 mA
C
T
CE
CB
Collector output capacitance
Input resistor
C
= 10 V, I = 0, f = 1 MHz
¾
7
ob
E
R1
¾
1.54
2.2
2.86
kW
Note2: h classification
FE
A: 200~700, B: 350~1200
2
2002-01-29
RN1544
RESTRICTIONS ON PRODUCT USE
000707EAA
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
· The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
· The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
· The information contained herein is subject to change without notice.
3
2002-01-29
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