RGW80TK65E [ROHM]
RGW80TK65E是以高速开关为特点的IGBT。适合PFC、太阳能变频器、UPS、焊接、IH等用途。;型号: | RGW80TK65E |
厂家: | ROHM |
描述: | RGW80TK65E是以高速开关为特点的IGBT。适合PFC、太阳能变频器、UPS、焊接、IH等用途。 开关 双极性晶体管 功率因数校正 |
文件: | 总12页 (文件大小:1896K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
RGW80TK65E
Datasheet
650V 40A Field Stop Trench IGBT
Outline
TO-3PFM
VCES
IC (100℃)
VCE(sat) (Typ.)
PD
650V
23A
1.5V@IC=40A
81W
(1)(2)(3)
Features
Inner Circuit
1) Low Collector - Emitter Saturation Voltage
2) High Speed Switching
(2)
(1) Gate
(2) Collector
(3) Emitter
*1
3) Low Switching Loss & Soft Switching
4) Built in Very Fast & Soft Recovery FRD
5) Pb - free Lead Plating ; RoHS Compliant
(1)
*1 Built in FRD
(3)
Applications
Packaging Specifications
PFC
Packaging
Tube
UPS
Reel Size (mm)
-
Welding
Solar Inverter
IH
Tape Width (mm)
Type
-
450
Basic Ordering Unit (pcs)
Packing Code
Marking
C11
RGW80TK65E
Absolute Maximum Ratings (at TC = 25°C unless otherwise specified)
Parameter
Collector - Emitter Voltage
Symbol
VCES
VGES
IC
Value
Unit
V
650
Gate - Emitter Voltage
V
30
TC = 25°C
39
A
Collector Current
TC = 100°C
IC
23
A
*1
Pulsed Collector Current
Diode Forward Current
Diode Pulsed Forward Current
Power Dissipation
160
A
ICP
TC = 25°C
IF
IF
46
A
TC = 100°C
26
200
A
*1
A
IFP
TC = 25°C
PD
PD
Tj
81
W
W
°C
°C
TC = 100°C
40
Operating Junction Temperature
Storage Temperature
40 to +175
55 to +175
Tstg
*1 Pulse width limited by Tjmax
.
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© 2018 ROHM Co., Ltd. All rights reserved.
2018.03 - Rev.A
1/11
Datasheet
RGW80TK65E
Thermal Resistance
Values
Parameter
Symbol
Unit
Min.
Typ.
Max.
1.85
1.83
Rθ(j-c)
Rθ(j-c)
Thermal Resistance IGBT Junction - Case
Thermal Resistance Diode Junction - Case
-
-
-
-
°C/W
°C/W
IGBT Electrical Characteristics (at Tj = 25°C unless otherwise specified)
Values
Typ.
Parameter
Symbol
Conditions
Unit
V
Min.
650
Max.
-
Collector - Emitter Breakdown
Voltage
BVCES IC = 10μA, VGE = 0V
-
-
ICES
VCE = 650V, VGE = 0V
Collector Cut - off Current
-
-
10
200
7.0
μA
nA
V
IGES
VGE = 30V, VCE = 0V
Gate - Emitter Leakage Current
-
Gate - Emitter Threshold
Voltage
VGE(th) VCE = 5V, IC = 26.0mA
5.0
6.0
IC = 40A, VGE = 15V
VCE(sat) Tj = 25°C
Tj = 175°C
Collector - Emitter Saturation
Voltage
-
-
1.5
1.9
-
V
1.85
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© 2018 ROHM Co., Ltd. All rights reserved.
2018.03 - Rev.A
2/11
Datasheet
RGW80TK65E
IGBT Electrical Characteristics (at Tj = 25°C unless otherwise specified)
Values
Typ.
3320
83
Parameter
Symbol
Conditions
Unit
pF
Min.
Max.
Cies
Coes
Cres
Qg
V
CE = 30V
GE = 0V
Input Capacitance
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
V
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate - Emitter Charge
Gate - Collector Charge
Turn - on Delay Time
Rise Time
f = 1MHz
60
VCE = 400V
110
23
Qge
Qgc
td(on)
tr
IC = 40A
nC
VGE = 15V
41
IC = 40A, VCC = 400V
VGE = 15V, RG = 10Ω
Tj = 25°C
44
17
ns
mJ
ns
td(off)
tf
Turn - off Delay Time
Fall Time
143
34
Inductive Load
Eon
Eoff
td(on)
tr
*Eon includes diode
reverse recovery
IC = 40A, VCC = 400V
VGE = 15V, RG = 10Ω
Tj = 175°C
Turn - on Switching Loss
Turn - off Switching Loss
Turn - on Delay Time
Rise Time
0.76
0.72
41
18
td(off)
tf
Turn - off Delay Time
Fall Time
158
70
Inductive Load
Eon
Eoff
*Eon includes diode
reverse recovery
IC = 160A, VCC = 520V
VP = 650V, VGE = 15V
RG = 100Ω, Tj = 175°C
Turn - on Switching Loss
Turn - off Switching Loss
0.76
0.91
mJ
-
Reverse Bias Safe Operating
Area
RBSOA
FULL SQUARE
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© 2018 ROHM Co., Ltd. All rights reserved.
2018.03 - Rev.A
3/11
Datasheet
RGW80TK65E
FRD Electrical Characteristics (at Tj = 25°C unless otherwise specified)
Values
Typ.
Parameter
Symbol
Conditions
Unit
V
Min.
Max.
IF = 50A
VF
Tj = 25°C
Diode Forward Voltage
Diode Reverse Recovery Time
-
-
1.45
1.55
1.9
-
Tj = 175°C
trr
-
-
-
-
-
-
-
-
102
11.2
0.64
29.5
177
-
-
-
-
-
-
-
-
ns
A
IF = 50A
Diode Peak Reverse Recovery
Current
Irr
VCC = 400V
diF/dt = 200A/μs
Tj = 25°C
Diode Reverse Recovery
Charge
Qrr
Err
trr
μC
μJ
ns
A
Diode Reverse Recovery Energy
Diode Reverse Recovery Time
IF = 50A
Diode Peak Reverse Recovery
Current
Irr
15.2
1.62
104.8
VCC = 400V
diF/dt = 200A/μs
Tj = 175°C
Diode Reverse Recovery
Charge
Qrr
Err
μC
μJ
Diode Reverse Recovery Energy
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© 2018 ROHM Co., Ltd. All rights reserved.
2018.03 - Rev.A
4/11
Datasheet
RGW80TK65E
Electrical Characteristic Curves
Fig.1 Power Dissipation vs. Case Temperature
Fig.2 Collector Current vs. Case Temperature
45
40
35
30
25
20
15
10
5
100
90
80
70
60
50
40
30
20
10
0
Tj≦175ºC
GE≧15V
V
0
0
25
50
75 100 125 150 175
0
25
50
75 100 125 150 175
Case Temperature : TC [ºC]
Case Temperature : TC [ºC]
Fig.3 Forward Bias Safe Operating Area
Fig.4 Reverse Bias Safe Operating Area
1000
200
180
160
140
120
100
80
1µs
100
10
10µs
100µs
1
60
0.1
0.01
40
Tc=25ºC
Single Pulse
Tj≦175ºC
20
V
GE≧15V
0
1
10
100
1000
0
200
400
600
800
Collector To Emitter Voltage : VCE[V]
Collector To Emitter Voltage : VCE[V]
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© 2018 ROHM Co., Ltd. All rights reserved.
2018.03 - Rev.A
5/11
Datasheet
RGW80TK65E
Electrical Characteristic Curves
Fig.5 Typical Output Characteristics
Fig.6 Typical Output Characteristics
160
140
120
100
80
160
140
120
100
80
Tj=25ºC
Tj=175ºC
VGE=20V
VGE=20V
VGE=12V
VGE=10V
VGE=15V
VGE=12V
VGE=10V
VGE=15V
60
60
VGE=8V
VGE=8V
40
40
20
20
0
0
0
1
2
3
4
5
0
1
2
3
4
5
Collector To Emitter Voltage : VCE [V]
Collector To Emitter Voltage : VCE [V]
Fig.7 Typical Transfer Characteristics
Fig.8 Typical Collector To Emitter Saturation
Voltage vs. Junction Temperature
80
4
VCE=10V
VGE=15V
70
60
50
40
30
20
10
0
3
IC=80A
2
IC=40A
IC=20A
1
Tj=175ºC
Tj=25ºC
10
0
0
2
4
6
8
12
25
50
75
100
125
150
175
Gate to Emitter Voltage : VGE [V]
Junction Temperature : Tj [ºC]
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© 2018 ROHM Co., Ltd. All rights reserved.
2018.03 - Rev.A
6/11
Datasheet
RGW80TK65E
Electrical Characteristic Curves
Fig.9 Typical Collector To Emitter Saturation
Fig.10 Typical Collector To Emitter Saturation
Voltage vs. Gate To Emitter Voltage
Voltage vs. Gate To Emitter Voltage
20
20
Tj=25ºC
Tj=175ºC
15
15
10
5
IC=80A
IC=40A
IC=80A
10
IC=40A
IC=20A
IC=20A
5
0
0
5
10
15
20
5
10
15
20
Gate to Emitter Voltage : VGE [V]
Gate to Emitter Voltage : VGE [V]
Fig.11 Typical Switching Time vs.
Collector Current
Fig.12 Typical Switching Time
vs. Gate Resistance
1000
1000
100
10
td(off)
td(off)
tf
tf
100
10
1
td(on)
td(on)
tr
tr
VCC=400V, IC=40A
VGE=15V, Tj=175ºC
Inductive load
VCC=400V, VGE=15V
RG=10Ω, Tj=175ºC
Inductive load
1
0
10 20 30 40 50 60 70 80
Collector Current : IC [A]
0
10
20
30
40
50
Gate Resistance : RG [Ω]
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© 2018 ROHM Co., Ltd. All rights reserved.
2018.03 - Rev.A
7/11
Datasheet
RGW80TK65E
Electrical Characteristic Curves
Fig.14 Typical Switching Energy Losses vs.
Gate Resistance
Fig.13 Typical Switching Energy Losses vs.
Collector Current
10
10
Eoff
1
1
Eoff
Eon
Eon
0.1
0.1
VCC=400V, IC=40A
VGE=15V, Tj=175ºC
Inductive load
VCC=400V, VGE=15V
RG=10Ω, Tj=175ºC
Inductive load
0.01
0.01
0
10 20 30 40 50 60 70 80
Collector Current : IC [A]
0
10
20
30
40
50
Gate Resistance : RG [Ω]
Fig.15 Typical Capacitance vs.
Collector To Emitter Voltage
10000
Fig.16 Typical Gate Charge
15
10
5
Cies
1000
100
10
Coes
Cres
VCC=400V
IC=40A
Tj=25ºC
f=1MHz
VGE=0V
Tj=25ºC
0
1
0
20
40
60
80
100
120
0.01
0.1
1
10
100
Collector To Emitter Voltage : VCE[V]
Gate Charge : Qg[nC]
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© 2018 ROHM Co., Ltd. All rights reserved.
2018.03 - Rev.A
8/11
Datasheet
RGW80TK65E
Electrical Characteristic Curves
Fig.18 Typical Diode Reverse Recovery Time
Fig.17 Typical Diode Forward Current vs.
vs. Forward Current
Forward Voltage
400
300
200
100
0
200
180
160
140
120
100
Tj=175ºC
Tj=25ºC
Tj=25ºC
80
Tj=175ºC
60
40
20
0
VCC=400V
diF/dt=200A/μs
Inductive load
0
10 20 30 40 50 60 70 80 90 100
Forward Current : IF [A]
0
1
2
3
4
5
Forward Voltage : VF[V]
Fig.19 Typical Diode Reverse Recovery
Current vs. Forward Current
20
Fig.20 Typical Diode Reverse
Recovery Charge
2.5
2
VCC=400V
diF/dt=200A/μs
Inductive load
Tj=175ºC
15
10
5
Tj=175ºC
1.5
1
Tj=25ºC
0.5
0
VCC=400V
diF/dt=200A/μs
Inductive load
Tj=25ºC
0
0
10 20 30 40 50 60 70 80 90 100
Forward Current : IF [A]
0
10 20 30 40 50 60 70 80 90 100
Forward Current : IF [A]
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© 2018 ROHM Co., Ltd. All rights reserved.
2018.03 - Rev.A
9/11
Datasheet
RGW80TK65E
Electrical Characteristic Curves
Fig.21 Typical IGBT Transient Thermal Impedance
10
1
D= 0.5
0.2
0.1
0.1
PDM
t1
Single Pulse
0.01
0.001
t2
0.01
Duty=t1/t2
Peak Tj=PDM×ZthJCTC
C1
C2
C3
R1
R2
R3
0.02
0.05
602.2u 4.674m 148.1m 248.5m 345.7m 495.8m
1E-6
1E-5
1E-4
1E-3
1E-2
1E-1
1E+0
Pulse Width : t1[s]
Fig.22 Typical Diode Transient Thermal Impedance
10
1
D= 0.5
0.1
0.2
0.1
PDM
t1
Single Pulse
0.01
0.001
t2
Duty=t1/t2
0.01
Peak Tj=PDM×ZthJCTC
C1
C2
C3
R1
R2
R3
0.02
0.05
526.5u 4.034m 227.1m 143.6m 364.7m 561.7m
1E-6
1E-5
1E-4
1E-3
1E-2
1E-1
1E+0
Pulse Width : t1[s]
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© 2018 ROHM Co., Ltd. All rights reserved.
2018.03 - Rev.A
10/11
Datasheet
RGW80TK65E
Inductive Load Switching Circuit and Waveform
Gate Drive Time
90%
D.U.T.
D.U.T.
VGE
10%
VG
90%
10%
IC
Fig.23 Inductive Load Circuit
td(off)
tf
td(on)
tr
ton
toff
trr , Qrr
IF
VCE
diF/dt
10%
VCE(sat)
Irr
Eon
Eoff
Fig.25 Diode Reverce Recovery Waveform
Fig.24 Inductive Load Waveform
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© 2018 ROHM Co., Ltd. All rights reserved.
2018.03 - Rev.A
11/11
Notice
N o t e s
1) The information contained herein is subject to change without notice.
2) Before you use our Products, please contact our sales representative and verify the latest specifica-
tions.
3) Although ROHM is continuously working to improve product reliability and quality, semicon-
ductors can break down and malfunction due to various factors.
Therefore, in order to prevent personal injury or fire arising from failure, please take safety
measures such as complying with the derating characteristics, implementing redundant and
fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no
responsibility for any damages arising out of the use of our Poducts beyond the rating specified by
ROHM.
4) Examples of application circuits, circuit constants and any other information contained herein are
provided only to illustrate the standard usage and operations of the Products. The peripheral
conditions must be taken into account when designing circuits for mass production.
5) The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly,
any license to use or exercise intellectual property or other rights held by ROHM or any other
parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of
such technical information.
6) The Products specified in this document are not designed to be radiation tolerant.
7) For use of our Products in applications requiring a high degree of reliability (as exemplified
below), please contact and consult with a ROHM representative : transportation equipment (i.e.
cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety
equipment, medical systems, and power transmission systems.
8) Do not use our Products in applications requiring extremely high reliability, such as aerospace
equipment, nuclear power control systems, and submarine repeaters.
9) ROHM shall have no responsibility for any damages or injury arising from non-compliance with
the recommended usage conditions and specifications contained herein.
10) ROHM has used reasonable care to ensure the accuracy of the information contained in this
document. However, ROHM does not warrants that such information is error-free, and ROHM
shall have no responsibility for any damages arising from any inaccuracy or misprint of such
information.
11) Please use the Products in accordance with any applicable environmental laws and regulations,
such as the RoHS Directive. For more details, including RoHS compatibility, please contact a
ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting
non-compliance with any applicable laws or regulations.
12) When providing our Products and technologies contained in this document to other countries,
you must abide by the procedures and provisions stipulated in all applicable export laws and
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Exchange and Foreign Trade Act.
13) This document, in part or in whole, may not be reprinted or reproduced without prior consent of
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R1107
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