RGW80TS65CHR [ROHM]
RGWxx65C系列是650V耐压IGBT,采用SiC肖特基势垒二极管作为续流二极管,实现了更低损耗。本产品还符合汽车电子产品可靠性标准“AEC-Q101”,即使在xEV车载充电器、DC-DC转换器、太阳能发电用的功率调节器、不间断电源装置(UPS)等严苛环境下也可放心使用。;型号: | RGW80TS65CHR |
厂家: | ROHM |
描述: | RGWxx65C系列是650V耐压IGBT,采用SiC肖特基势垒二极管作为续流二极管,实现了更低损耗。本产品还符合汽车电子产品可靠性标准“AEC-Q101”,即使在xEV车载充电器、DC-DC转换器、太阳能发电用的功率调节器、不间断电源装置(UPS)等严苛环境下也可放心使用。 电子 DC-DC转换器 双极性晶体管 二极管 装置 调节器 |
文件: | 总15页 (文件大小:1510K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
RGW80TS65CHR
650V 40A Hybrid IGBT with Built-In SiC-SBD
Datasheet
lOutline
TO-247N
VCES
IC (100°C)
VCE(sat) (Typ.)
PD
650V
40A
1.5V
214W
(1)(2)(3)
lFeatures
1) AEC-Q101 Qualified
lInner Circuit
(2)
(3)
(1) Gate
2) Low Collector - Emitter Saturation Voltage
3) Low Switching Loss & Soft Switching
4) Built in No Recovery Silicon Carbide SBD
5) Pb - free Lead Plating ; RoHS Compliant
(2) Collector
(3) Emitter
*1
(1)
*1 Built in SiC-SBD
lApplication
lPackaging Specifications
Automotive
Packaging
Tube
On & Off Board Chargers
DC-DC Converters
PFC
Reel Size (mm)
-
-
Tape Width (mm)
Type
Basic Ordering Unit (pcs)
450
C11
Industrial Inverter
Packing Code
RGW80TS65C
Marking
lAbsolute Maximum Ratings (at TC = 25°C unless otherwise specified)
Parameter
Collector - Emitter Voltage
Symbol
VCES
VGES
IC
Value
650
±30
81
Unit
V
Gate - Emitter Voltage
V
TC = 25°C
A
Collector Current
TC = 100°C
IC
48
A
*1
Pulsed Collector Current
Diode Forward Current
Diode Pulsed Forward Current
Power Dissipation
160
39
A
ICP
TC = 25°C
IF
IF
A
TC = 100°C
25
A
*1
100
214
107
A
IFP
TC = 25°C
PD
PD
Tj
W
W
TC = 100°C
Operating Junction Temperature
Storage Temperature
-40 to +175
-55 to +175
°C
°C
Tstg
*1 Pulse width limited by Tjmax.
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© 2021 ROHM Co., Ltd. All rights reserved.
2021.12 - Rev.B
1/13
Datasheet
RGW80TS65CHR
lThermal Resistance
Values
Parameter
Symbol
Unit
Min.
Typ.
Max.
0.70
1.34
Rθ(j-c)
Rθ(j-c)
Thermal Resistance IGBT Junction - Case
Thermal Resistance Diode Junction - Case
-
-
-
-
C/W
C/W
lIGBT Electrical Characteristics (at Tj = 25°C unless otherwise specified)
Values
Typ.
Parameter
Symbol
Conditions
Unit
V
Min.
650
Max.
-
Collector - Emitter Breakdown
Voltage
BVCES IC = 5mA, VGE = 0V
ICES VCE = 650V, VGE = 0V
IGES VGE = ±30V, VCE = 0V
VGE(th) VCE = 5V, IC = 26.0mA
-
-
Collector Cut - off Current
-
-
5
mA
nA
V
Gate - Emitter Leakage
Current
-
±200
7.0
Gate - Emitter Threshold
Voltage
5.0
6.0
IC = 40A, VGE = 15V,
VCE(sat) Tj = 25°C
Tj = 175°C
Collector - Emitter Saturation
Voltage
-
-
1.5
1.9
-
V
1.85
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© 2021 ROHM Co., Ltd. All rights reserved.
2021.12 - Rev.B
2/13
Datasheet
RGW80TS65CHR
lIGBT Electrical Characteristics (at Tj = 25°C unless otherwise specified)
Values
Typ.
3320
83
Parameter
Symbol
Conditions
Unit
pF
Min.
Max.
Cies VCE = 30V,
Coes VGE = 0V,
Input Capacitance
Output Capacitance
Reverse transfer Capacitance
Total Gate Charge
Gate - Emitter Charge
Gate - Collector Charge
Turn - on Delay Time
Rise Time
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Cres
Qg
f = 1MHz
60
VCE = 400V,
110
23
Qge IC = 40A,
Qgc VGE = 15V
td(on)
nC
41
43
IC = 20A, VCC = 400V,
VGE = 15V, RG = 10Ω,
Tj = 25°C
Inductive Load
*Eon include diode
reverse recovery
tr
td(off)
tf
11
ns
mJ
ns
Turn - off Delay Time
Fall Time
145
40
Eon
Eoff
td(on)
tr
Turn - on Switching Loss
Turn - off Switching Loss
Turn - on Delay Time
Rise Time
0.12
0.34
40
IC = 20A, VCC = 400V,
VGE = 15V, RG = 10Ω,
Tj = 175°C
Inductive Load
*Eon include diode
reverse recovery
12
td(off)
tf
Turn - off Delay Time
Fall Time
178
79
Eon
Eoff
Turn - on Switching Loss
Turn - off Switching Loss
0.14
0.52
mJ
-
IC = 160A, VCC = 520V,
VP = 650V, VGE = 15V,
RG = 100Ω, Tj = 175℃
Reverse Bias Safe Operating
Area
RBSOA
FULL SQUARE
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© 2021 ROHM Co., Ltd. All rights reserved.
2021.12 - Rev.B
3/13
Datasheet
RGW80TS65CHR
lSiC-SBD Electrical Characteristics (at Tj = 25°C unless otherwise specified)
Values
Typ.
Parameter
Symbol
Conditions
IF = 20A,
Unit
V
Min.
Max.
VF
Tj = 25°C
Diode Forward Voltage
-
-
1.35
1.63
1.55
-
Tj = 175°C
Diode Reverse Recovery
Time
trr
-
-
-
-
-
-
-
-
33
2.7
53
-
-
-
-
-
-
-
-
ns
A
Diode Peak Reverse
Recovery Current
IF = 20A,
Irr
VCC = 400V,
diF/dt = 200A/μs,
Tj = 25°C
Diode Reverse Recovery
Charge
Qrr
Err
trr
nC
μJ
ns
A
Diode Reverse Recovery
Energy
1.4
37
Diode Reverse Recovery
Time
Diode Peak Reverse
Recovery Current
IF = 20A,
Irr
2.7
59
VCC = 400V,
diF/dt = 200A/μs,
Tj = 175°C
Diode Reverse Recovery
Charge
Qrr
Err
C
nC
μJ
pF
Diode Reverse Recovery
Energy
1.7
VR = 1V,f=1MHz
-
-
730
74
-
-
Total Capacitance
VR = 600V,f=1MHz
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© 2021 ROHM Co., Ltd. All rights reserved.
2021.12 - Rev.B
4/13
Datasheet
RGW80TS65CHR
lElectrical Characteristic Curves
Fig.1 Power Dissipation
Fig.2 Collector Current
vs. Case Temperature
vs. Case Temperature
90
80
70
60
50
40
30
20
10
0
240
220
200
180
160
140
120
100
80
60
40
20
0
Tj ≤ 175ºC
VGE ≥ 15V
0
25 50 75 100 125 150 175
Case Temperature : TC [°C ]
0
25 50 75 100 125 150 175
Case Temperature : TC [°C ]
Fig.3 Forward Bias Safe Operating Area
Fig.4 Reverse Bias Safe Operating Area
200
180
160
140
120
100
80
1000
1μs
100
10μs
100μs
10
1
60
40
0.1
Tj ≤ 175ºC
VGE = 15V
TC = 25ºC
Single Pulse
20
0
0.01
0
200
400
600
800
1
10
100
1000
Collector To Emitter Voltage : VCE [V]
Collector To Emitter Voltage : VCE [V]
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© 2021 ROHM Co., Ltd. All rights reserved.
2021.12 - Rev.B
5/13
Datasheet
RGW80TS65CHR
lElectrical Characteristic Curves
Fig.5 Typical Output Characteristics
Fig.6 Typical Output Characteristics
160
160
Tj = 25ºC
Tj = 175ºC
140
140
VGE = 20V
VGE = 20V
120
120
100
80
60
40
20
0
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 15V
100
VGE = 12V
VGE = 10V
VGE = 8V
80
60
40
20
0
VGE = 8V
0
1
2
3
4
5
0
1
2
3
4
5
Collector To Emitter Voltage : VCE [V]
Collector To Emitter Voltage : VCE [V]
Fig.8 Typical Collector to Emitter Saturation
Voltage vs. Junction Temperature
Fig.7 Typical Transfer Characteristics
80
4
VGE = 15V
VCE = 10V
70
3
60
50
40
30
IC = 80A
IC = 40A
IC = 20A
2
1
0
20
Tj = 175ºC
10
Tj = 25ºC
0
25 50 75 100 125 150 175
Junction Temperature : Tj [°C ]
0
2
4
6
8
10 12
Gate To Emitter Voltage : VGE [V]
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© 2021 ROHM Co., Ltd. All rights reserved.
2021.12 - Rev.B
6/13
Datasheet
RGW80TS65CHR
lElectrical Characteristic Curves
Fig.9 Typical Collector to Emitter Saturation
Voltage vs. Gate to Emitter Voltage
Fig.10 Typical Collector to Emitter Saturation
Voltage vs. Gate to Emitter Voltage
20
20
Tj = 175ºC
Tj = 25ºC
IC = 80A
IC = 80A
15
15
IC = 40A
IC = 40A
IC = 20A
IC = 20A
10
10
5
0
5
0
5
10
15
20
5
10
15
20
Gate To Emitter Voltage : VGE [V]
Gate To Emitter Voltage : VGE [V]
Fig.11 Typical Capacitance
vs. Collector to Emitter Voltage
Fig.12 Typical Gate Charge
15
10000
1000
100
10
Cies
10
5
Coes
Cres
f = 1MHz
VGE = 0V
Tj = 25ºC
VCC = 400V
IC = 40A
Tj = 25ºC
1
0
0.01
0.1
1
10
100
0
20 40 60 80 100 120
Gate Charge : Qg [nC]
Collector To Emitter Voltage : VCE [V]
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© 2021 ROHM Co., Ltd. All rights reserved.
2021.12 - Rev.B
7/13
Datasheet
RGW80TS65CHR
lElectrical Characteristic Curves
Fig.13 Typical Switching Time
vs. Collector Current
Fig.14 Typical Switching Time
vs. Gate Resistance
1000
1000
td(off)
td(off)
td(on)
100
100
td(on)
tf
tf
10
10
tr
tr
VCC = 400V, VGE = 15V,
VCC = 400V, VGE = 15V,
RG = 10Ω, Tj = 25ºC
IC = 20A, Tj = 25ºC
Inductive load
Inductive load
1
1
0 10 20 30 40 50 60 70 80
Collecter Current : IC [A]
0
10
20
30
40
50
Gate Resistance : RG [Ω]
Fig.15 Typical Switching Energy Losses
Fig.16 Typical Switching Energy Losses
vs. Collector Current
vs. Gate Resistance
10
10
1
1
Eoff
Eoff
0.1
0.1
Eon
VCC = 400V, VGE = 15V,
RG = 10Ω, Tj = 25ºC
VCC = 400V, VGE = 15V,
Eon
IC = 20A, Tj = 25ºC
Inductive load
Inductive load
0.01
0.01
0 10 20 30 40 50 60 70 80
Collecter Current : IC [A]
0
10
20
30
40
50
Gate Resistance : RG [Ω]
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© 2021 ROHM Co., Ltd. All rights reserved.
2021.12 - Rev.B
8/13
Datasheet
RGW80TS65CHR
lElectrical Characteristic Curves
Fig.17 Typical Switching Time
vs. Collector Current
Fig.18 Typical Switching Time
vs. Gate Resistance
1000
1000
td(off)
td(off)
100
100
tf
tf
td(on)
td(on)
10
10
tr
tr
VCC = 400V, VGE = 15V,
VCC = 400V, VGE = 15V,
RG = 10Ω, Tj = 175ºC
IC = 20A, Tj = 175ºC
Inductive load
Inductive load
1
1
0 10 20 30 40 50 60 70 80
Collecter Current : IC [A]
0
10
20
30
40
50
Gate Resistance : RG [Ω]
Fig.19 Typical Switching Energy Losses
Fig.20 Typical Switching Energy Losses
vs. Collector Current
vs. Gate Resistance
10
10
1
1
Eoff
Eoff
0.1
0.1
Eon
Eon
VCC = 400V, VGE = 15V,
RG = 10Ω, Tj = 175ºC
Inductive load
VCC = 400V, VGE = 15V,
IC = 20A, Tj = 175ºC
Inductive load
0.01
0.01
0 10 20 30 40 50 60 70 80
Collecter Current : IC [A]
0
10
20
30
40
50
Gate Resistance : RG [Ω]
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© 2021 ROHM Co., Ltd. All rights reserved.
2021.12 - Rev.B
9/13
Datasheet
RGW80TS65CHR
lElectrical Characteristic Curves
Fig.21 Typical Diode Forward Current
vs. Forward Voltage
Fig.22 Typical Diode Revese Recovery Time
vs. Forward Current
100
90
50
Tj = 175ºC
80
40
70
60
30
Tj = 25ºC
Tj = 25ºC
50
40
30
20
Tj = 175ºC
20
10
VCC = 400V
diF/dt = 200A/μs
Inductive load
10
0
0
0
1
2
3
4
5
0
20
40
60
80
100
Forward Voltage : VF [V]
Forward Current : IF [A]
Fig.23 Typical Diode Reverse Recovery
Current vs. Forward Current
Fig.24 Typical Diode Rrverse Recovery
Charge vs. Forward Current
5
70
Tj = 175ºC
60
50
4
Tj = 25ºC
3
Tj = 25ºC
40
30
20
10
0
2
1
0
Tj = 175ºC
VCC = 400V
diF/dt = 200A/μs
Inductive load
VCC = 400V
diF/dt = 200A/μs
Inductive load
0
20
40
60
80
100
0
20
40
60
80
100
Forward Current : IF [A]
Forward Current : IF [A]
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© 2021 ROHM Co., Ltd. All rights reserved.
2021.12 - Rev.B
10/13
Datasheet
RGW80TS65CHR
lElectrical Characteristic Curves
Fig.25 Typical Diode Capacitance
vs. Reverse Voltage
Fig.26 Typical Diode Capacitance
Store Energy
10000
1000
100
10
10
8
6
4
2
0
f = 1MHz
VGE = 0V
Tj = 25ºC
1
0.01
0.1
1
10
100
0
100
200
300
400
Reverse Voltage : VR [V]
Reverse Voltage : VR [V]
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© 2021 ROHM Co., Ltd. All rights reserved.
2021.12 - Rev.B
11/13
Datasheet
RGW80TS65CHR
lElectrical Characteristic Curves
Fig.27 Typical IGBT Transient Thermal Impedance
1
D = 0.5
0.2
0.1
0.1
PDM
Single Pulse
t1
0.01
0.01
t2
Duty = t1/t2
Peak Tj = PDM×Zθ(j-c)+TC
0.02
0.05
C1
C2
C3
225.2u 644.8u 1.012m 84.37m 51.91m 303.7m
R1 R2 R3
0.001
1E-6
1E-5
1E-4
1E-3
1E-2
1E-1
1E+0
Pulse Width : t1 [s]
Fig.28 Typical Diode Transient Thermal Impedance
10
D = 0.5
0.2
0.1
1
0.1
PDM
t1
Single Pulse
0.01
t2
Duty = t1/t2
Peak Tj = PDM×Zθ(j-c)+TC
R1 R2 R3
0.01
0.02
C1
C2
C3
0.05
886.2u 3.724m 39.86m 207.7m 684.8m 327.9m
0.001
1E-6
1E-5
1E-4
1E-3
1E-2
1E-1
1E+0
Pulse Width : t1 [s]
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© 2021 ROHM Co., Ltd. All rights reserved.
2021.12 - Rev.B
12/13
Datasheet
RGW80TS65CHR
●Inductive Load Switching Circuit and Waveform
Gate Drive Time
90%
D.U.T.
VGE
D.U.T.
10%
VG
90%
10%
IC
Fig.29 Inductive Load Circuit
tf
tr
td(on)
td(off)
trr , Qrr
ton
toff
IF
diF/dt
VCE
10%
Irr
VCE(sat)
Eon
Eoff
Fig.31 Diode Reverse Recovery Waveform
Fig.30 Inductive Load Waveform
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© 2021 ROHM Co., Ltd. All rights reserved.
2021.12 - Rev.B
13/13
Notice
N o t e s
1) The information contained herein is subject to change without notice.
2) Before you use our Products, please contact our sales representative and verify the latest specifica-
tions.
3) Although ROHM is continuously working to improve product reliability and quality, semicon-
ductors can break down and malfunction due to various factors.
Therefore, in order to prevent personal injury or fire arising from failure, please take safety
measures such as complying with the derating characteristics, implementing redundant and
fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no
responsibility for any damages arising out of the use of our Poducts beyond the rating specified by
ROHM.
4) Examples of application circuits, circuit constants and any other information contained herein are
provided only to illustrate the standard usage and operations of the Products. The peripheral
conditions must be taken into account when designing circuits for mass production.
5) The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly,
any license to use or exercise intellectual property or other rights held by ROHM or any other
parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of
such technical information.
6) The Products specified in this document are not designed to be radiation tolerant.
7) For use of our Products in applications requiring a high degree of reliability (as exemplified
below), please contact and consult with a ROHM representative : transportation equipment (i.e.
cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety
equipment, medical systems, and power transmission systems.
8) Do not use our Products in applications requiring extremely high reliability, such as aerospace
equipment, nuclear power control systems, and submarine repeaters.
9) ROHM shall have no responsibility for any damages or injury arising from non-compliance with
the recommended usage conditions and specifications contained herein.
10) ROHM has used reasonable care to ensure the accuracy of the information contained in this
document. However, ROHM does not warrants that such information is error-free, and ROHM
shall have no responsibility for any damages arising from any inaccuracy or misprint of such
information.
11) Please use the Products in accordance with any applicable environmental laws and regulations,
such as the RoHS Directive. For more details, including RoHS compatibility, please contact a
ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting
non-compliance with any applicable laws or regulations.
12) When providing our Products and technologies contained in this document to other countries,
you must abide by the procedures and provisions stipulated in all applicable export laws and
regulations, including without limitation the US Export Administration Regulations and the Foreign
Exchange and Foreign Trade Act.
13) This document, in part or in whole, may not be reprinted or reproduced without prior consent of
ROHM.
Thank you for your accessing to ROHM product informations.
More detail product informations and catalogs are available, please contact us.
ROHM Customer Support System
http://www.rohm.com/contact/
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© 2012 ROHM Co., Ltd. All rights reserved.
R1107
S
Daattaasshheeeett
General Precaution
1. Before you use our Pro ducts, you are requested to care fully read this document and fully understand its contents.
ROHM shall not be in an y way responsible or liable for failure, malfunction or accident arising from the use of a ny
ROHM’s Products against warning, caution or note contained in this document.
2. All information contained in this docume nt is current as of the issuing date and subj ect to change without any prior
notice. Before purchasing or using ROHM’s Products, please confirm the la test information with a ROHM sale s
representative.
3. The information contained in this doc ument is provi ded on an “as is” basis and ROHM does not warrant that all
information contained in this document is accurate an d/or error-free. ROHM shall not be in an y way responsible or
liable for any damages, expenses or losses incurred by you or third parties resulting from inaccuracy or errors of or
concerning such information.
Notice – WE
Rev.001
© 2015 ROHM Co., Ltd. All rights reserved.
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