RGSX5TS65E [ROHM]
RGSX5TS65E是短路耐受时间为8μs、非常适用于通用逆变器、UPS、焊接机和功率调节器等应用的产品。;型号: | RGSX5TS65E |
厂家: | ROHM |
描述: | RGSX5TS65E是短路耐受时间为8μs、非常适用于通用逆变器、UPS、焊接机和功率调节器等应用的产品。 调节器 |
文件: | 总13页 (文件大小:5296K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
RGSX5TS65E
650V 75A Field Stop Trench IGBT
Datasheet
lOutline
TO-247N
VCES
IC (100°C)
VCE(sat) (Typ.)
PD
650V
75A
1.7V
404W
(1)(2)(3)
lInner Circuit
(2)
lFeatures
1) Low Collector - Emitter Saturation Voltage
2) Short Circuit Withstand Time 8μs
(1) Gate
(2) Collector
(3) Emitter
*1
(1)
*1 Built in FRD
3) Built in Very Fast & Soft Recovery FRD
4) Pb - free Lead Plating ; RoHS Compliant
(3)
lPackaging Specifications
Packaging
Tube
lApplication
Reel Size (mm)
-
General Inverter
Tape Width (mm)
Type
-
450
UPS
Basic Ordering Unit (pcs)
Power Conditioner
Welder
Packing Code
Marking
C11
RGSX5TS65E
lAbsolute Maximum Ratings (at TC = 25°C unless otherwise specified)
Parameter
Collector - Emitter Voltage
Symbol
VCES
VGES
IC
Value
650
±30
114
75
Unit
V
Gate - Emitter Voltage
V
TC = 25°C
A
Collector Current
TC = 100°C
IC
A
*1
Pulsed Collector Current
Diode Forward Current
Diode Pulsed Forward Current
Power Dissipation
225
127
75
A
ICP
TC = 25°C
IF
IF
A
TC = 100°C
A
*1
225
404
202
A
IFP
TC = 25°C
PD
PD
Tj
W
W
TC = 100°C
Operating Junction Temperature
Storage Temperature
-40 to +175
-55 to +175
°C
°C
Tstg
*1 Pulse width limited by Tjmax.
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© 2021 ROHM Co., Ltd. All rights reserved.
2021.01 - Rev.A
1/11
Datasheet
RGSX5TS65E
lThermal Resistance
Values
Parameter
Symbol
Unit
Min.
Typ.
Max.
0.37
0.57
Rθ(j-c)
Rθ(j-c)
Thermal Resistance IGBT Junction - Case
Thermal Resistance Diode Junction - Case
-
-
-
-
C/W
C/W
lIGBT Electrical Characteristics (at Tj = 25°C unless otherwise specified)
Values
Typ.
Parameter
Symbol
Conditions
Unit
V
Min.
650
Max.
-
Collector - Emitter Breakdown
Voltage
BVCES IC = 10μA, VGE = 0V
-
VCE = 650V, VGE= 0V
ICES Tj = 25℃
Collector Cut - off Current
-
-
-
-
10
5
μA
Tj = 175℃*2
mA
Gate - Emitter Leakage
Current
IGES VGE = ±30V, VCE = 0V
VGE(th) VCE = 5V, IC = 3.5mA
-
-
±200
7.0
nA
V
Gate - Emitter Threshold
Voltage
5.0
6.0
IC = 75A, VGE = 15V
VCE(sat) Tj = 25°C
Tj = 175°C
Collector - Emitter Saturation
Voltage
-
-
1.70
2.20
2.15
-
V
V
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© 2021 ROHM Co., Ltd. All rights reserved.
2021.01 - Rev.A
2/11
Datasheet
RGSX5TS65E
lIGBT Electrical Characteristics (at Tj = 25°C unless otherwise specified)
Values
Typ.
2320
168
23
Parameter
Symbol
Conditions
Unit
pF
Min.
Max.
Cies VCE = 30V
Coes VGE = 0V
Input Capacitance
Output Capacitance
Reverse transfer Capacitance
Total Gate Charge
Gate - Emitter Charge
Gate - Collector Charge
Turn - on Delay Time
Rise Time
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Cres
Qg
f = 1MHz
VCE = 300V
79
Qge IC = 75A
Qgc VGE = 15V
td(on)
21
nC
33
43
IC = 75A, VCC = 400V,
VGE = 15V, RG = 10Ω,
Tj = 25°C
Inductive Load
*Eon include diode
reverse recovery
tr
td(off)
tf
40
ns
mJ
ns
Turn - off Delay Time
Fall Time
113
87
Eon
Eoff
td(on)
tr
Turn-on Switching Loss
Turn-off Switching Loss
Turn - on Delay Time
Rise Time
3.44
1.90
42
IC = 75A, VCC = 400V,
VGE = 15V, RG = 10Ω,
Tj = 175°C
Inductive Load
*Eon include diode
reverse recovery
45
td(off)
tf
Turn - off Delay Time
Fall Time
135
137
3.72
2.58
Eon
Eoff
Turn-on Switching Loss
Turn-off Switching Loss
mJ
-
IC = 225A, VCC = 520V
Vp = 650V, VGE = 15V
RG = 50Ω, Tj = 175°C
Reverse Bias
Safe Operating Area
RBSOA
tsc
FULL SQUARE
V
CC ≤ 360V
VGE = 15V, Tj = 25°C
Short Circuit Withstand Time
Short Circuit Withstand Time
8
6
-
-
-
-
μs
μs
V
CC ≤ 360V
VGE = 15V, Tj = 150°C
*2
tsc
*2 Design assurance without measurement
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© 2021 ROHM Co., Ltd. All rights reserved.
2021.01 - Rev.A
3/11
Datasheet
RGSX5TS65E
lFRD Electrical Characteristics (at Tj = 25°C unless otherwise specified)
Values
Typ.
Parameter
Symbol
Conditions
IF = 75A
Unit
V
Min.
Max.
VF
Tj = 25°C
Diode Forward Voltage
-
-
1.45
1.55
1.90
-
Tj = 175°C
Diode Reverse Recovery
Time
trr
-
-
-
-
-
-
-
-
116
9.2
-
-
-
-
-
-
-
-
ns
A
Diode Peak Reverse
Recovery Current
IF = 75A,
Irr
VCC = 400V,
diF/dt = 200A/μs,
Tj = 25°C
Diode Reverse Recovery
Charge
Qrr
Err
trr
0.61
20
μC
μJ
ns
A
Diode Reverse Recovery
Energy
Diode Reverse Recovery
Time
311
14
Diode Peak Reverse
Recovery Current
IF = 75A,
Irr
VCC = 400V,
diF/dt = 200A/μs,
Tj = 175°C
Diode Reverse Recovery
Charge
Qrr
Err
2.46
172
μC
μJ
Diode Reverse Recovery
Energy
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© 2021 ROHM Co., Ltd. All rights reserved.
2021.01 - Rev.A
4/11
Datasheet
RGSX5TS65E
lElectrical Characteristic Curves
Fig.1 Power Dissipation
vs. Case Temperature
500
Fig.2 Collector Current
vs. Case Temperature
150
125
100
75
400
300
200
100
0
50
25
Tj ≤ 175ºC
VGE ≥ 15V
0
0
25 50 75 100 125 150 175
Case Temperature : TC [°C ]
0
25 50 75 100 125 150 175
Case Temperature : TC [°C ]
Fig.3 Forward Bias Safe Operating Area
Fig.4 Reverse Bias Safe Operating Area
300
1000
10μs
250
200
150
100
100
10
100μs
1
0.1
50
Tj ≤ 175ºC
VGE = 15V
TC = 25ºC
Single Pulse
0
0.01
0
200
400
600
800
1
10
100
1000
Collector To Emitter Voltage : VCE [V]
Collector To Emitter Voltage : VCE [V]
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© 2021 ROHM Co., Ltd. All rights reserved.
2021.01 - Rev.A
5/11
Datasheet
RGSX5TS65E
lElectrical Characteristic Curves
Fig.5 Typical Output Characteristics
Fig.6 Typical Output Characteristics
225
225
Tj = 25ºC
200
Tj = 175ºC
200
VGE = 20V
VGE = 12V
175
150
125
100
75
175
VGE = 20V
VGE = 15V
150
VGE = 15V
125
VGE = 12V
100
VGE = 10V
VGE = 10V
75
50
25
0
50
VGE = 8V
VGE = 8V
25
0
0
1
2
3
4
5
0
1
2
3
4
5
Collector To Emitter Voltage : VCE [V]
Collector To Emitter Voltage : VCE [V]
Fig.8 Typical Collector to Emitter Saturation
Voltage vs. Junction Temperature
Fig.7 Typical Transfer Characteristics
5
75
VGE = 15V
VCE = 10V
IC = 150A
4
60
45
30
15
3
IC = 75A
2
IC = 37.5A
1
Tj = 175ºC
Tj = 25ºC
0
0
0
2
4
6
8
10 12
25 50 75 100 125 150 175
Gate To Emitter Voltage : VGE [V]
Junction Temperature : Tj [°C ]
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© 2021 ROHM Co., Ltd. All rights reserved.
2021.01 - Rev.A
6/11
Datasheet
RGSX5TS65E
lElectrical Characteristic Curves
Fig.9 Typical Collector to Emitter Saturation
Voltage vs. Gate to Emitter Voltage
Fig.10 Typical Collector to Emitter Saturation
Voltage vs. Gate to Emitter Voltage
20
20
Tj = 175ºC
Tj = 25ºC
IC = 150A
IC = 150A
15
15
IC = 75A
IC = 75A
IC = 37.5A
IC = 37.5A
10
10
5
0
5
0
5
10
15
20
5
10
15
20
Gate To Emitter Voltage : VGE [V]
Gate To Emitter Voltage : VGE [V]
Fig.11 Typical Switching Time
vs. Collector Current
Fig.12 Typical Switching Time
vs. Gate Resistance
1000
1000
td(off)
tf
100
10
1
tf
td(on)
100
td(off)
td(on)
tr
VCC = 400V, VGE = 15V,
VCC = 400V, VGE = 15V,
RG = 10Ω, Tj = 175ºC
Inductive load
tr
IC = 75A, Tj = 175ºC
Inductive load
10
0
25 50 75 100 125 150
Collecter Current : IC [A]
0
10
20
30
40
50
Gate Resistance : RG [Ω]
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© 2021 ROHM Co., Ltd. All rights reserved.
2021.01 - Rev.A
7/11
Datasheet
RGSX5TS65E
lElectrical Characteristic Curves
Fig.13 Typical Switching Energy Losses
Fig.14 Typical Switching Energy Losses
vs. Gate Resistance
vs. Collector Current
100
100
10
1
Eon
Eon
10
Eoff
Eoff
1
VCC = 400V, VGE = 15V,
IC = 75A, Tj = 175ºC
Inductive load
VCC = 400V, VGE = 15V,
RG = 10Ω, Tj = 175ºC
Inductive load
0.1
0.1
0
25 50 75 100 125 150
Collector Current : IC [A]
0
10
20
30
40
50
Gate Resistance : RG [Ω]
Fig.15 Typical Capacitance vs. Collector
Emitter to Voltage
Fig.16 Typical Gate Charge
15
10000
VCC = 300V
VCC = 200V
Cies
1000
100
10
10
5
Coes
VCC = 400V
Cres
f = 1MHz
VGE = 0V
Tj = 25ºC
IC = 75A
Tj = 25ºC
1
0
0.01
0.1
1
10
100
0
15 30 45 60 75 90
Gate Charge : QG [nQ]
Collector To Emitter Voltage : VCE [V]
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© 2021 ROHM Co., Ltd. All rights reserved.
2021.01 - Rev.A
8/11
Datasheet
RGSX5TS65E
lElectrical Characteristic Curves
Fig.17 Typical Diode Forward Current
Fig.18 Typical Diode Reverce Recovery Time
vs. Forward Voltage
225
vs. Forward Current
400
200
175
150
125
100
75
300
Tj = 175ºC
200
100
50
Tj = 175ºC
Tj = 25ºC
VCC = 400V
diF/dt = 200A/μs
Inductive load
25
0
Tj = 25ºC
0
0
0.5
1
1.5
2
2.5
3
0
25 50 75 100 125 150
Forward Current : IF [A]
Forward Voltage : VF [V]
Fig.19 Typical Diode Reverse Recovery
Current vs. Forward Current
25
Fig.20 Typical Diode Reverse Recovery
Energy Losses vs. Forward Current
2
VCC = 400V
Tj = 175℃
Inductive load
1.5
20
RG = 10Ω
Tj = 175ºC
15
1
RG = 20Ω
10
RG = 50Ω
0.5
0
Tj = 25ºC
5
0
VCC = 400V
diF/dt = 200A/μs
Inductive load
0
25 50 75 100 125 150
Forward Current : IF [A]
0
25 50 75 100 125 150
Forward Current : IF [A]
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© 2021 ROHM Co., Ltd. All rights reserved.
2021.01 - Rev.A
9/11
Datasheet
RGSX5TS65E
lElectrical Characteristic Curves
Fig.21 IGBT Transient Thermal Impedance
1
D = 0.5
0.2
0.1
0.1
PDM
t1
0.01
t2
Duty = t1/t2
Peak Tj = PDM×Zθ(j-c)+TC
Single Pulse
0.01
0.02
C1
C2
C3
R1
666.5u 2.774m 16.73m 64.72m 168.9m 136.4m
R2
R3
0.05
0.001
1E-6
1E-5
1E-4
1E-3
1E-2
1E-1
1E+0
Pulse Width : t1 [s]
Fig.22 Diode Transient Thermal Impedance
1
D = 0.5
0.2
0.1
0.1
PDM
Single Pulse
t1
0.01
0.01
t2
Duty = t1/t2
Peak Tj = PDM×Zθ(j-c)+TC
0.02
0.05
C1
C2
C3
R1
R2
R3
451.8u 734.9u 7.522m 108.8m 144.5m 306.7m
0.001
1E-6
1E-5
1E-4
1E-3
1E-2
1E-1
1E+0
Pulse Width : t1 [s]
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© 2021 ROHM Co., Ltd. All rights reserved.
2021.01 - Rev.A
10/11
Datasheet
RGSX5TS65E
●Inductive Load Switching Circuit and Waveform
Gate Drive Time
90%
D.U.T.
D.U.T.
VGE
10%
VG
90%
10%
IC
td(on)
Fig.23 Inductive Load Circuit
tf
td(off)
tr
trr , Qrr
ton
toff
IF
diF/dt
VCE
10%
Irr
VCE(sat)
Eon
Eoff
Fig.24 Diode Reverce Recovery Waveform
Fig.25 Inductive Load Waveform
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© 2021 ROHM Co., Ltd. All rights reserved.
2021.01 - Rev.A
11/11
Notice
N o t e s
1) The information contained herein is subject to change without notice.
2) Before you use our Products, please contact our sales representative and verify the latest specifica-
tions.
3) Although ROHM is continuously working to improve product reliability and quality, semicon-
ductors can break down and malfunction due to various factors.
Therefore, in order to prevent personal injury or fire arising from failure, please take safety
measures such as complying with the derating characteristics, implementing redundant and
fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no
responsibility for any damages arising out of the use of our Poducts beyond the rating specified by
ROHM.
4) Examples of application circuits, circuit constants and any other information contained herein are
provided only to illustrate the standard usage and operations of the Products. The peripheral
conditions must be taken into account when designing circuits for mass production.
5) The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly,
any license to use or exercise intellectual property or other rights held by ROHM or any other
parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of
such technical information.
6) The Products are intended for use in general electronic equipment (i.e. AV/OA devices, communi-
cation, consumer systems, gaming/entertainment sets) as well as the applications indicated in
this document.
7) The Products specified in this document are not designed to be radiation tolerant.
8) For use of our Products in applications requiring a high degree of reliability (as exemplified
below), please contact and consult with a ROHM representative : transportation equipment (i.e.
cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety
equipment, medical systems, servers, solar cells, and power transmission systems.
9) Do not use our Products in applications requiring extremely high reliability, such as aerospace
equipment, nuclear power control systems, and submarine repeaters.
10) ROHM shall have no responsibility for any damages or injury arising from non-compliance with
the recommended usage conditions and specifications contained herein.
11) ROHM has used reasonable care to ensure the accuracy of the information contained in this
document. However, ROHM does not warrants that such information is error-free, and ROHM
shall have no responsibility for any damages arising from any inaccuracy or misprint of such
information.
12) Please use the Products in accordance with any applicable environmental laws and regulations,
such as the RoHS Directive. For more details, including RoHS compatibility, please contact a
ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting
non-compliance with any applicable laws or regulations.
13) When providing our Products and technologies contained in this document to other countries,
you must abide by the procedures and provisions stipulated in all applicable export laws and
regulations, including without limitation the US Export Administration Regulations and the Foreign
Exchange and Foreign Trade Act.
14) This document, in part or in whole, may not be reprinted or reproduced without prior consent of
ROHM.
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More detail product informations and catalogs are available, please contact us.
ROHM Customer Support System
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© 2015 ROHM Co., Ltd. All rights reserved.
R1107
A
Daattaasshheeeett
General Precaution
1. Before you use our Pro ducts, you are requested to care fully read this document and fully understand its contents.
ROHM shall not be in an y way responsible or liable for failure, malfunction or accident arising from the use of a ny
ROHM’s Products against warning, caution or note contained in this document.
2. All information contained in this docume nt is current as of the issuing date and subj ect to change without any prior
notice. Before purchasing or using ROHM’s Products, please confirm the la test information with a ROHM sale s
representative.
3. The information contained in this doc ument is provi ded on an “as is” basis and ROHM does not warrant that all
information contained in this document is accurate an d/or error-free. ROHM shall not be in an y way responsible or
liable for any damages, expenses or losses incurred by you or third parties resulting from inaccuracy or errors of or
concerning such information.
Notice – WE
Rev.001
© 2015 ROHM Co., Ltd. All rights reserved.
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