RGSX5TS65HR [ROHM]

RGSX5TS65HR是短路耐受时间为8μs、非常适用于车载加热器的产品。符合AEC-Q101标准。;
RGSX5TS65HR
型号: RGSX5TS65HR
厂家: ROHM    ROHM
描述:

RGSX5TS65HR是短路耐受时间为8μs、非常适用于车载加热器的产品。符合AEC-Q101标准。

文件: 总11页 (文件大小:4208K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
RGSX5TS65HR  
650V 75A Field Stop Trench IGBT  
Datasheet  
lOutline  
TO-247N  
VCES  
IC (100°C)  
VCE(sat) (Typ.)  
PD  
650V  
75A  
1.7V  
404W  
(1)(2)(3)  
lInner Circuit  
(2)  
lFeatures  
1) Low Collector - Emitter Saturation Voltage  
2) Short Circuit Withstand Time 8μs  
3) Qualified to AEC-Q101  
(1) Gate  
(2) Collector  
(3) Emitter  
(1)  
(3)  
4) Pb - free Lead Plating ; RoHS Compliant  
lPackaging Specifications  
Packaging  
Tube  
lApplication  
Reel Size (mm)  
-
Heater for Automotive  
Tape Width (mm)  
Type  
-
450  
Basic Ordering Unit (pcs)  
Packing Code  
C11  
RGSX5TS65  
Marking  
lAbsolute Maximum Ratings (at TC = 25°C unless otherwise specified)  
Parameter  
Collector - Emitter Voltage  
Symbol  
VCES  
VGES  
IC  
Value  
650  
±30  
114  
75  
Unit  
V
Gate - Emitter Voltage  
V
TC = 25°C  
A
Collector Current  
TC = 100°C  
IC  
A
*1  
Pulsed Collector Current  
Power Dissipation  
225  
404  
202  
A
ICP  
TC = 25°C  
PD  
PD  
Tj  
W
W
TC = 100°C  
Operating Junction Temperature  
Storage Temperature  
-40 to +175  
-55 to +175  
°C  
°C  
Tstg  
*1 Pulse width limited by Tjmax.  
www.rohm.com  
© 2021 ROHM Co., Ltd. All rights reserved.  
2021.01 - Rev.A  
1/9  
Datasheet  
RGSX5TS65HR  
lThermal Resistance  
Values  
Typ.  
-
Parameter  
Thermal Resistance IGBT Junction - Case  
Symbol  
Rθ(j-c)  
Unit  
Min.  
-
Max.  
0.37  
C/W  
lIGBT Electrical Characteristics (at Tj = 25°C unless otherwise specified)  
Values  
Typ.  
Parameter  
Symbol  
Conditions  
Unit  
V
Min.  
650  
Max.  
-
Collector - Emitter Breakdown  
Voltage  
BVCES IC = 10μA, VGE = 0V  
-
VCE = 650V, VGE= 0V  
ICES Tj = 25℃  
Collector Cut - off Current  
-
-
-
-
10  
5
μA  
Tj = 175*2  
mA  
Gate - Emitter Leakage  
Current  
IGES VGE = ±30V, VCE = 0V  
VGE(th) VCE = 5V, IC = 3.5mA  
-
-
±200  
7.0  
nA  
V
Gate - Emitter Threshold  
Voltage  
5.0  
6.0  
IC = 75A, VGE = 15V  
VCE(sat) Tj = 25°C  
Tj = 175°C  
Collector - Emitter Saturation  
Voltage  
-
-
1.70  
2.20  
2.15  
-
V
V
www.rohm.com  
© 2021 ROHM Co., Ltd. All rights reserved.  
2021.01 - Rev.A  
2/9  
Datasheet  
RGSX5TS65HR  
lIGBT Electrical Characteristics (at Tj = 25°C unless otherwise specified)  
Values  
Typ.  
2320  
168  
23  
Parameter  
Symbol  
Conditions  
Unit  
pF  
Min.  
Max.  
Cies VCE = 30V  
Coes VGE = 0V  
Input Capacitance  
Output Capacitance  
Reverse transfer Capacitance  
Total Gate Charge  
Gate - Emitter Charge  
Gate - Collector Charge  
Turn - on Delay Time  
Rise Time  
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Cres  
Qg  
f = 1MHz  
VCE = 300V  
79  
Qge IC = 75A  
Qgc VGE = 15V  
td(on)  
21  
nC  
33  
43  
IC = 75A, VCC = 400V,  
VGE = 15V, RG = 10Ω,  
Tj = 25°C  
Inductive Load  
*Eon include diode  
reverse recovery  
tr  
td(off)  
tf  
40  
ns  
mJ  
ns  
Turn - off Delay Time  
Fall Time  
113  
87  
Eon  
Eoff  
td(on)  
tr  
Turn-on Switching Loss  
Turn-off Switching Loss  
Turn - on Delay Time  
Rise Time  
3.32  
1.90  
42  
IC = 75A, VCC = 400V,  
VGE = 15V, RG = 10Ω,  
Tj = 175°C  
Inductive Load  
*Eon include diode  
reverse recovery  
45  
td(off)  
tf  
Turn - off Delay Time  
Fall Time  
135  
137  
3.58  
2.58  
Eon  
Eoff  
Turn-on Switching Loss  
Turn-off Switching Loss  
mJ  
-
IC = 225A, VCC = 520V  
Vp = 650V, VGE = 15V  
RG = 50Ω, Tj = 175°C  
Reverse Bias  
Safe Operating Area  
RBSOA  
tsc  
FULL SQUARE  
V
CC 360V  
VGE = 15V, Tj = 25°C  
Short Circuit Withstand Time  
Short Circuit Withstand Time  
8
6
-
-
-
-
μs  
μs  
V
CC 360V  
VGE = 15V, Tj = 150°C  
*2  
tsc  
*2 Design assurance without measurement  
www.rohm.com  
© 2021 ROHM Co., Ltd. All rights reserved.  
2021.01 - Rev.A  
3/9  
Datasheet  
RGSX5TS65HR  
lElectrical Characteristic Curves  
Fig.1 Power Dissipation  
vs. Case Temperature  
500  
Fig.2 Collector Current  
vs. Case Temperature  
150  
125  
100  
75  
400  
300  
200  
100  
0
50  
25  
Tj ≤ 175ºC  
VGE ≥ 15V  
0
0
25 50 75 100 125 150 175  
Case Temperature : TC [°C ]  
0
25 50 75 100 125 150 175  
Case Temperature : TC [°C ]  
Fig.3 Forward Bias Safe Operating Area  
Fig.4 Reverse Bias Safe Operating Area  
300  
1000  
10μs  
250  
200  
150  
100  
100  
10  
100μs  
1
0.1  
50  
Tj ≤ 175ºC  
VGE = 15V  
TC = 25ºC  
Single Pulse  
0
0.01  
0
200  
400  
600  
800  
1
10  
100  
1000  
Collector To Emitter Voltage : VCE [V]  
Collector To Emitter Voltage : VCE [V]  
www.rohm.com  
© 2021 ROHM Co., Ltd. All rights reserved.  
2021.01 - Rev.A  
4/9  
Datasheet  
RGSX5TS65HR  
lElectrical Characteristic Curves  
Fig.5 Typical Output Characteristics  
Fig.6 Typical Output Characteristics  
225  
225  
T= 25ºC  
200  
T= 175ºC  
200  
VGE = 20V  
VGE = 12V  
175  
150  
125  
100  
75  
175  
VGE = 20V  
VGE = 15V  
150  
VGE = 15V  
125  
VGE = 12V  
100  
VGE = 10V  
VGE = 10V  
75  
50  
25  
0
50  
VGE = 8V  
VGE = 8V  
25  
0
0
1
2
3
4
5
0
1
2
3
4
5
Collector To Emitter Voltage : VCE [V]  
Collector To Emitter Voltage : VCE [V]  
Fig.8 Typical Collector to Emitter Saturation  
Voltage vs. Junction Temperature  
Fig.7 Typical Transfer Characteristics  
5
75  
VGE = 15V  
VCE = 10V  
IC = 150A  
4
60  
45  
30  
15  
3
IC = 75A  
2
IC = 37.5A  
1
Tj = 175ºC  
Tj = 25ºC  
0
0
0
2
4
6
8
10 12  
25 50 75 100 125 150 175  
Gate To Emitter Voltage : VGE [V]  
Junction Temperature : Tj [°C ]  
www.rohm.com  
© 2021 ROHM Co., Ltd. All rights reserved.  
2021.01 - Rev.A  
5/9  
Datasheet  
RGSX5TS65HR  
lElectrical Characteristic Curves  
Fig.9 Typical Collector to Emitter Saturation  
Voltage vs. Gate to Emitter Voltage  
Fig.10 Typical Collector to Emitter Saturation  
Voltage vs. Gate to Emitter Voltage  
20  
20  
Tj = 175ºC  
Tj = 25ºC  
IC = 150A  
IC = 150A  
15  
15  
IC = 75A  
IC = 75A  
IC = 37.5A  
IC = 37.5A  
10  
10  
5
0
5
0
5
10  
15  
20  
5
10  
15  
20  
Gate To Emitter Voltage : VGE [V]  
Gate To Emitter Voltage : VGE [V]  
Fig.11 Typical Switching Time  
vs. Collector Current  
Fig.12 Typical Switching Time  
vs. Gate Resistance  
1000  
1000  
td(off)  
tf  
100  
10  
1
tf  
td(on)  
100  
td(off)  
d(on)  
tr  
VCC = 400V, VGE = 15V,  
VCC = 400V, VGE = 15V,  
RG = 10Ω, Tj = 175ºC  
Inductive load  
tr  
IC = 75A, Tj = 175ºC  
Inductive load  
10  
0
25 50 75 100 125 150  
Collecter Current : IC [A]  
0
10  
20  
30  
40  
50  
Gate Resistance : RG [Ω]  
www.rohm.com  
© 2021 ROHM Co., Ltd. All rights reserved.  
2021.01 - Rev.A  
6/9  
Datasheet  
RGSX5TS65HR  
lElectrical Characteristic Curves  
Fig.13 Typical Switching Energy Losses  
Fig.14 Typical Switching Energy Losses  
vs. Gate Resistance  
vs. Collector Current  
100  
100  
10  
1
Eon  
Eon  
10  
Eoff  
Eoff  
1
VCC = 400V, VGE = 15V,  
IC = 75A, Tj = 175ºC  
Inductive load  
VCC = 400V, VGE = 15V,  
RG = 10Ω, Tj = 175ºC  
Inductive load  
0.1  
0.1  
0
25 50 75 100 125 150  
Collector Current : IC [A]  
0
10  
20  
30  
40  
50  
Gate Resistance : RG [Ω]  
Fig.15 Typical Capacitance vs. Collector  
Emitter to Voltage  
Fig.16 Typical Gate Charge  
15  
10000  
VCC = 300V  
VCC = 200V  
Cies  
1000  
100  
10  
10  
5
Coes  
VCC = 400V  
Cres  
f = 1MHz  
VGE = 0V  
Tj = 25ºC  
IC = 75A  
Tj = 25ºC  
1
0
0.01  
0.1  
1
10  
100  
0
15 30 45 60 75 90  
Gate Charge : QG [nQ]  
Collector To Emitter Voltage : VCE [V]  
www.rohm.com  
© 2021 ROHM Co., Ltd. All rights reserved.  
2021.01 - Rev.A  
7/9  
Datasheet  
RGSX5TS65HR  
lElectrical Characteristic Curves  
Fig.17 IGBT Transient Thermal Impedance  
1
D = 0.5  
0.2  
0.1  
0.1  
PDM  
t1  
Single Pulse  
0.01  
t2  
Duty = t1/t2  
Peak Tj = PDM×Zθ(j-c)+TC  
0.01  
0.02  
C1  
C2  
C3  
R1  
666.5u 2.774m 16.73m 64.72m 168.9m 136.4m  
R2  
R3  
0.05  
0.001  
1E-6  
1E-5  
1E-4  
1E-3  
1E-2  
1E-1  
1E+0  
Pulse Width : t1 [s]  
www.rohm.com  
© 2021 ROHM Co., Ltd. All rights reserved.  
2021.01 - Rev.A  
8/9  
Datasheet  
RGSX5TS65HR  
Inductive Load Switching Circuit and Waveform  
Gate Drive Time  
90%  
VGE  
D.U.T.  
10%  
VG  
90%  
10%  
IC  
td(on)  
tf  
Fig.18 Inductive Load Circuit  
td(off)  
tr  
ton  
toff  
VCE  
10%  
VCE(sat)  
Eon  
Eoff  
Fig.19 Inductive Load Waveform  
www.rohm.com  
© 2021 ROHM Co., Ltd. All rights reserved.  
2021.01 - Rev.A  
9/9  
Notice  
N o t e s  
1) The information contained herein is subject to change without notice.  
2) Before you use our Products, please contact our sales representative and verify the latest specifica-  
tions.  
3) Although ROHM is continuously working to improve product reliability and quality, semicon-  
ductors can break down and malfunction due to various factors.  
Therefore, in order to prevent personal injury or fire arising from failure, please take safety  
measures such as complying with the derating characteristics, implementing redundant and  
fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no  
responsibility for any damages arising out of the use of our Poducts beyond the rating specified by  
ROHM.  
4) Examples of application circuits, circuit constants and any other information contained herein are  
provided only to illustrate the standard usage and operations of the Products. The peripheral  
conditions must be taken into account when designing circuits for mass production.  
5) The technical information specified herein is intended only to show the typical functions of and  
examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly,  
any license to use or exercise intellectual property or other rights held by ROHM or any other  
parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of  
such technical information.  
6) The Products specified in this document are not designed to be radiation tolerant.  
7) For use of our Products in applications requiring a high degree of reliability (as exemplified  
below), please contact and consult with a ROHM representative : transportation equipment (i.e.  
cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety  
equipment, medical systems, servers, solar cells, and power transmission systems.  
8) Do not use our Products in applications requiring extremely high reliability, such as aerospace  
equipment, nuclear power control systems, and submarine repeaters.  
9) ROHM shall have no responsibility for any damages or injury arising from non-compliance with  
the recommended usage conditions and specifications contained herein.  
10) ROHM has used reasonable care to ensure the accuracy of the information contained in this  
document. However, ROHM does not warrants that such information is error-free, and ROHM  
shall have no responsibility for any damages arising from any inaccuracy or misprint of such  
information.  
11) Please use the Products in accordance with any applicable environmental laws and regulations,  
such as the RoHS Directive. For more details, including RoHS compatibility, please contact a  
ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting  
non-compliance with any applicable laws or regulations.  
12) When providing our Products and technologies contained in this document to other countries,  
you must abide by the procedures and provisions stipulated in all applicable export laws and  
regulations, including without limitation the US Export Administration Regulations and the Foreign  
Exchange and Foreign Trade Act.  
13) This document, in part or in whole, may not be reprinted or reproduced without prior consent of  
ROHM.  
Thank you for your accessing to ROHM product informations.  
More detail product informations and catalogs are available, please contact us.  
ROHM Customer Support System  
http://www.rohm.com/contact/  
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© 2015 ROHM Co., Ltd. All rights reserved.  
R1107  
B
Daattaasshheeeett  
General Precaution  
1. Before you use our Pro ducts, you are requested to care fully read this document and fully understand its contents.  
ROHM shall not be in an y way responsible or liable for failure, malfunction or accident arising from the use of a ny  
ROHM’s Products against warning, caution or note contained in this document.  
2. All information contained in this docume nt is current as of the issuing date and subj ect to change without any prior  
notice. Before purchasing or using ROHM’s Products, please confirm the la test information with a ROHM sale s  
representative.  
3. The information contained in this doc ument is provi ded on an “as is” basis and ROHM does not warrant that all  
information contained in this document is accurate an d/or error-free. ROHM shall not be in an y way responsible or  
liable for any damages, expenses or losses incurred by you or third parties resulting from inaccuracy or errors of or  
concerning such information.  
Notice – WE  
Rev.001  
© 2015 ROHM Co., Ltd. All rights reserved.  

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