RB520SM-40 [ROHM]
Schottky Barrier Diode; 肖特基二极管
| 型号： | RB520SM-40 |
| 厂家： | 
ROHM |
| 描述： | Schottky Barrier Diode |
| 文件： | 总4页 (文件大小：1114K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Data Sheet
Schottky Barrier Diode
RB520SM-40
lApplications
lDimensions (Unit : mm)
lLand size figure (Unit : mm)
Small current rectification
0.8±0.05
0.12±0.05
0.8
lFeatures
1)Ultra small mold type. (EMD2)
2)Low IR
3)High reliability
EMD2
lConstruction
Silicon epitaxial
lStructure
0.3±0.05
0.6±0.1
ROHM : EMD2
JEDEC :SOD-523
JEITA : SC-79
dot (year week factory)
lTaping specifications (Unit : mm)
lAbsolute maximum ratings (Ta=25°C)
Parameter
Limits
Symbol
VRM
VR
Unit
V
Reverse voltage (repetitive)
Reverse voltage (DC)
45
40
V
Average rectified forward current
Forward current surge peak (60Hz・1cyc)
Junction temperature
200
Io
IFSM
Tj
mA
A
1
150
°C
°C
Storage temperature
Tstg
-40 to +150
lElectrical characteristics (Ta=25°C)
Parameter
Symbol
VF1
Min.
Typ.
Max.
0.39
0.55
1
Unit
V
Conditions
IF=10mA
-
-
-
-
-
-
-
-
Forward voltage
VF2
IF=100mA
VR=10V
VR=40V
V
IR1
μA
μA
Reverse current
IR2
10
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© 2011 ROHM Co., Ltd. All rights reserved.
2011.06 - Rev.A
1/3
Data Sheet
RB520SM-40
ꢀ
100
10
1
1000
1000
100
10
Ta=125℃
Ta=75℃
f=1MHｚ
100
10
1
Ta=125℃
Ta=25℃
1
Ta=75℃
Ta=25℃
0.1
Ta=-25℃
0.01
0.001
Ta=-25℃
0.1
0
100
200
300
400
500
600
0
10
20
30
0
10
20
30
40
REVERSE VOLTAGE : VR(V)
VR-Ct CHARACTERISTICS
FORWARD VOLTAGE : VF(mV)
VF-IF CHARACTERISTICS
REVERSE VOLTAGE : VR(V)
VR-IR CHARACTERISTICS
510
500
490
480
470
460
1000
900
800
700
600
500
400
300
200
100
0
50
Ta=25℃
IF=100mA
n=30pcs
Ta=25℃
f=1MHz
VR=0V
45
40
35
30
25
20
15
10
5
Ta=25℃
VR=10V
n=30pcs
n=10pcs
AVE:491.2mV
AVE:23.2pF
AVE:67.0nA
0
VF DISPERSION MAP
IR DISPERSION MAP
Ct DISPERSION MAP
10
15
10
5
30
25
20
15
10
5
Ifsm
1cyc
Ifsm
Ifsm
8.3ms
t
8.3ms 8.3ms
1cyc
5
AVE:5.60A
0
0
0
1
10
100
0.1
1
10
100
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
IFSM DISPERSION MAP
TIME:t(ms)
IFSM-t CHARACTERISTICS
0.3
0.2
0.1
0
10000
0.03
0.025
0.02
0.015
0.01
0.005
0
Mounted on epoxy board
D=1/2
1000
100
10
DC
Rth(j-a)
Rth(j-c)
Sin(θ＝180)
DC
D=1/2
Sin(θ＝180)
0.001 0.01
0.1
1
10
100
1000
0
0.1
0.2
0.3
0.4
0.5
0
10
20
30
40
TIME:t(s)
Rth-t CHARACTERISTICS
AVERAGE RECTIFIED
FORWARD CURRENT：Io(A)
REVERSE VOLTAGE:VR(V)
VR-PR CHARACTERISTICS
Io-Pf CHARACTERISTICS
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© 2011 ROHM Co., Ltd. All rights reserved.
2/3
2011.06 - Rev.A
Data Sheet
RB520SM-40
ꢀ
Io
0A
0V
Io
0A
0V
VR
t
VR
D=t/T
t
VR=20V
Tj=150℃
D=t/T
T
0.5
VR=20V
Tj=150℃
0.5
0.4
0.3
0.2
0.1
0
T
0.4
DC
DC
0.3
D=1/2
D=1/2
0.2
0.1
Sin(θ＝180)
Sin(θ＝180)
0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
CASE TEMPARATURE:Tc(℃)
DERATING CURVE (Io-Tc)
AMBIENT TEMPERATURE:Ta(℃)
DERATING CURVE (Io-Ta)
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© 2011 ROHM Co., Ltd. All rights reserved.
3/3
2011.06 - Rev.A
Notice
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© 2011 ROHM Co., Ltd. All rights reserved.
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