RB520ZS8A30 [ROHM]
Schottky Barrier Diode; 肖特基二极管
| 型号： | RB520ZS8A30 |
| 厂家： | 
ROHM |
| 描述： | Schottky Barrier Diode |
| 文件： | 总5页 (文件大小：1158K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Data Sheet
Schottky Barrier Diode
RB520ZS8A30
lLand size figure (Unit : mm)
lApplications
lDimensions (Unit : mm)
Rectifying small power
0.4
lFeatures
A D
1) Ultra small mold type (HMD8)
2) Halogen Free
0.25
HMD8
ROHM : HMD8
lStructure
JEDEC : -
JEITA : -
dot
lConstruction
(year week factory)
Silicon epitaxial planer
lTaping dimensions (Unit : mm)
lAbsolute maximum ratings (Ta=25C)
Parameter
Reverse voltage (DC)
Limits
30
Symbol
VR
Unit
V
Average rectified forward current (*1)
Forward current surge peak (60Hz･1cyc.) (*2)
Junction temperature
100
Io
mA
mA
C
500
IFSM
Tj
150
Storage temperature
Tstg
Pd
-55 to +150
400
C
mW/Total
Power dissipation
(*1)(*2)Rating of per diode
lElectrical characteristics (Ta=25C)
Parameter
Forward voltage
Symbol
Min.
Typ.
Max.
0.46
0.3
Unit
V
Conditions
VF
IR
IF=10mA
VR=10V
-
-
-
-
Reverse current
μA
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
2011.11 - Rev.A
1/4
Data Sheet
RB520ZS8A30
ꢀ
1000000
100
Ta=125°C
Ta=150°C
Ta=150°C
100000
10000
1000
100
Ta=125°C
10
Ta=75°C
Ta=75°C
Ta=25°C
Ta=25°C
1
10
Ta=-25°C
Ta=-25°C
1
0.1
0.1
0
100
200
300
400
500
600
700
0
10
20
30
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS
430
420
410
400
390
380
10
f=1MHｚ
Ta=25°C
IF=10mA
n=30pcs
AVE:405.7mV
1
0
10
20
30
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
VF DISPERSION MAP
50
45
40
35
30
25
20
15
10
5
100
90
80
70
60
50
40
30
20
10
0
Ta=25°C
VR=10V
n=30pcs
Ta=25°C
f=1MHz
VR=0V
AVE:19.93nA
AVE:6.3pF
0
Ct DISPERSION MAP
IR DISPERSION MAP
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
2/4
2011.11 - Rev.A
Data Sheet
RB520ZS8A30
ꢀ
10
9
8
7
6
5
4
3
2
1
0
30
25
20
15
10
5
Tj=25°C
IF=0.1A
IR=0.1A
Irr=0.1×IR
n=10pcs
IFSM
8.3ms
AVE:5.8ns
AVE:4.30A
0
trr DISPERSION MAP
IFSM DISPERSION MAP
10
10
IFSM
IFSM
t
8.3ms
8.3ms
1cyc.
5
5
0
0
1
1
10
100
10
100
TIME:t(ms)
IFSM-t CHARACTERISTICS
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
1000
100
10
0.15
0.1
0.05
0
Sin(θ＝180)
DC
D=1/2
1
0
0.05
0.1
0.15
0.2
0.001
0.01
0.1
1
10
100
1000
AVERAGE RECTIFIED
FORWARD CURRENT：Io(A)
Io-Pf CHARACTERISTICS
TIME:t(s)
Rth-t CHARACTERISTICS
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
3/4
2011.11 - Rev.A
Data Sheet
RB520ZS8A30
ꢀ
30
25
20
15
10
5
0.005
0.004
0.003
0.002
DC
AVE:7.4kV
D=1/2
0.001
0
Sin(θ＝180)
AVE:0.90kV
0
C=200pF
C=100pF
0
10
20
30
R=0Ω
R=1.5kΩ
REVERSE VOLTAGE:VR(V)
VR-PR CHARACTERISTICS
ESD DISPERSION MAP
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
4/4
2011.11 - Rev.A
Notice
N o t e s
Thank you for your accessing to ROHM product informations.
More detail product informations and catalogs are available, please contact us.
ROHM Customer Support System
http://www.rohm.com/contact/
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
R1120A
相关型号：
RB521CM-30T2R
Rectifier Diode, Schottky, 1 Element, 0.1A, 30V V(RRM), Silicon, ROHS COMPLIANT, VMN2M, 2 PIN
ROHM
©2020 ICPDF网 联系我们和版权申明