RB520CS-30 [ROHM]
Schottky barrier diode; 肖特基二极管
| 型号： | RB520CS-30 |
| 厂家： | 
ROHM |
| 描述： | Schottky barrier diode |
| 文件： | 总4页 (文件大小：213K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RB520CS-30
Diodes
Schottky barrier diode
RB520CS-30
zApplications
z External dimensions (Unit : mm)
z Land size figure (Unit : mm)
Low current rectification
0.55
0.16±0.05
0.6±0.05
zFeatures
1) Ultra Small power mold type.
(VMN2)
2) Low IR
VMN2
3) High reliability.
0.156
zStructure
0.37±0.03
0.35±0.1
zConstruction
Silicon epitaxial planar
ROHM : VMN2
dot (year week factory) + day
z Taping specifications (Unit : mm)
φ1.55
0.2±0.05
2±0.05
4±0.1
φ0.5
0.52
2±0.05
4.0±0.1
0.7±0.05
zAbsolute maximum ratings (Ta=25°C)
Parameter
Limits
Symbol
VR
Unit
Reverse voltage (DC)
30
100
V
Average rectified forward current
Io
IFSM
Tj
mA
mA
℃
Forward current surge peak (60Hz・1cyc)
Junction temperature
500
150
Storage temperature
-40 to +150
Tstg
℃
zElectrical characteristics (Ta=25°C)
Parameter
Forward voltage
Reverse current
Conditions
Symbol
Min.
Typ.
Max.
Unit
V
VF
IR
-
-
-
-
0.45
0.5
IF=10mA
VR=10V
µA
Rev.B
1/3
RB520CS-30
Diodes
zElectrical characteristic curves (Ta=25°C)
1000000
100
10
1
1000
100
10
Ta=125℃
Ta=75℃
Ta=25℃
f=1MHｚ
Ta=125℃
Ta=75℃
100000
10000
1000
100
Ta=-25℃
Ta=25℃
1
0.1
Ta=-25℃
10
0.01
0.001
1
0
10
20
30
0
100
200
300 400
500
600
0
5
10
15
20
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
370
360
350
340
330
320
20
19
18
17
16
15
14
13
12
11
10
1000
900
800
700
600
500
400
300
200
100
0
Ta=25℃
IF=10mA
n=30pcs
Ta=25℃
Ta=25℃
VR=10V
n=30pcs
f=1MHz
VR=0V
n=10pcs
AVE:100.5nA
IR DISPERSION MAP
Ifsm
AVE:15.94pF
AVE:338.8mV
VF DISPERSION MAP
Ct DISPERSION MAP
10
10
20
15
10
5
1cyc
Ifsm
Ifsm
t
8.3ms 8.3ms
1cyc
8.3ms
5
5
AVE:3.90A
0
0
0
1
10
100
1
10
100
TIME:t(ms)
IFSM-t CHARACTERISTICS
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
IFSM DISRESION MAP
0.1
0.08
0.06
0.04
0.02
0
0.02
0.015
0.01
0.005
0
1000
100
10
Rth(j-a)
D=1/2
Rth(j-c)
Mounted on epoxy board
DC
Sin(θ＝180)
D=1/2
DC
IM=10mA
IF=100mA
time
1ms
Sin(θ＝180)
300us
0
0.05
0.1
0.15
0.2
0
5
10
15
20
25
30
0.001
0.1
10
1000
AVERAGE RECTIFIED
FORWARD CURRENT：Io(A)
Io-Pf CHARACTERISTICS
TIME:t(s)
Rth-t CHARACTERISTICS
REVERSE VOLTAGE:VR(V)
VR-PR CHARACTERISTICS
Rev.B
2/3
RB520CS-30
Diodes
0.3
0.3
0.2
0.1
0
Io
Io
0A
0V
0A
0V
VR
VR
t
t
D=t/T
VR=15V
Tj=125℃
D=t/T
VR=15V
Tj=125℃
0.2
0.1
0
DC
DC
T
T
D=1/2
D=1/2
Sin(θ＝180)
Sin(θ＝180)
25
0
50
75
100
125
0
25
50
75
100
125
AMBIENT TEMPERATURE:Ta(℃)
Derating curve (Io-Ta)
CASE TEMPARATURE:Tc(℃)
Derating curve (Io-Tc)
Rev.B
3/3
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1
相关型号：
RB520CS-30T2RA
Rectifier Diode, Schottky, 1 Element, 0.1A, 30V V(RRM), Silicon, ROHS COMPLIANT, VMN2, 2 PIN
ROHM
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