RB520CS-30FH [ROHM]
Rectifier Diode, Schottky, 1 Element, 0.1A, 30V V(RRM), Silicon, VMN2, 2 PIN;
| 型号： | RB520CS-30FH |
| 厂家： | 
ROHM |
| 描述： | Rectifier Diode, Schottky, 1 Element, 0.1A, 30V V(RRM), Silicon, VMN2, 2 PIN 整流二极管 肖特基二极管 |
| 文件： | 总4页 (文件大小：1067K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Data Sheet
Schottky barrier diode
RB520CS-30
Applications
Dimensions (Unit : mm)
Land size figure (Unit : mm)
Low current rectification
0.55
Features
1) Ultra Small power mold type. (VMN2)
2) Low IR
VMN2
3)High reliability.
Construction
Structure
Silicon epitaxial planar
Taping specifications (Unit : mm)
Absolute maximum ratings (Ta25C)
Parameter
Limits
30
Symbol
VR
Unit
V
Reverse voltage (DC)
Average rectiied forward current
Forward current surge peak （60Hz/1cyc）
Junction temperature
100
Io
mA
mA
C
500
IFSM
Tj
150
Storage temperature
40 to 150
Tstg
C
Electrical characteristics (Ta25C)
Parameter
Conditions
IF=10mA
VR=10V
Symbol
Min.
Typ. Max.
Unit
V
Forward voltage
Reverse current
VF
IR
-
-
-
-
0.45
0.5
A
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2011.05 - Rev.D
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1/3
Data Sheet
RB520CS-30
ꢀ
1000000
100000
10000
1000
100
100
10
1
1000
Ta=125C
Ta=75C
Ta=25C
f=1MHｚ
Ta=125C
100
Ta=75C
10
Ta=-25C
Ta=25C
1
0.1
Ta=-25C
10
0.01
0.001
1
0
100
200
300
400
500
600
0
10
20
30
0
5
10
15
20
FORWARD VOLTAGE : VF(mV)
VF-IF CHARACTERISTICS
REVERSE VOLTAGE : VR(V)
VR-Ct CHARACTERISTICS
REVERSE VOLTAGE : VR(V)
VR-IR CHARACTERISTICS
370
360
350
340
330
320
20
19
18
17
16
15
14
13
12
11
10
1000
900
800
700
600
500
400
300
200
100
0
Ta=25C
IF=10mA
Ta25C
f1MHz
VR0V
Ta=25C
VR=10V
n=30pcs
n=30pcs
n10pcs
AVE : 100.5nA
AVE : 15.94pF
AVE:338 : 8mV
VF DISPERSION MAP
IR DISPERSION MAP
Ct DISPERSION MAP
10
10
20
15
10
5
1cyc
Ifsm
Ifsm
Ifsm
t
8.3ms 8.3ms
1cyc
8.3ms
5
5
AVE : 3.90A
0
0
0
1
10
100
1
10
NUMBER OF CYCLES
100
TIME : t(ms)
IFSM DISRESION MAP
IFSM-t CHARACTERISTICS
IFSM-CYCLE CHARACTERISTICS
0.1
0.08
0.06
0.04
0.02
0
0.02
0.015
0.01
0.005
0
1000
Rth(j-a)
D1/2
Rth(j-c)
DC
Sin(=180)
100
Mounted on epoxy board
D1/2
IM=10mA
IF=100mA
DC
15
1ms
time
300us
Sin(=180)
10
0.001 0.01
0
0.05
0.1
0.15
0.2
0
5
10
20
25
30
0.1
1
10
100
1000
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
Io-Pf CHARACTERISTICS
TIME : t(s)
Rth-t CHARACTERISTICS
REVERSE VOLTAGE : VR(V)
VR-PR CHARACTERISTICS
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© 2011 ROHM Co., Ltd. All rights reserved.
2/3
2011.05 - Rev.D
Data Sheet
RB520CS-30
ꢀ
0.3
0.3
0.2
0.1
0
Io
Io
0A
0V
0A
0V
VR
VR
t
t
D=t/T
D=t/T
0.2
DC
VR=15V
Tj=125C
VR=15V
Tj=125C
DC
T
T
D=1/2
D=1/2
0.1
Sin(=180)
Sin(=180)
0
0
25
50
75
100
125
0
25
50
75
100
125
AMBIENT TEMPERATURE : Ta(・C)
CASE TEMPARATURE : Tc(C)
Derating Curve"(Io-Ta)
Derating Curve"(Io-Tc)
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© 2011 ROHM Co., Ltd. All rights reserved.
3/3
2011.05 - Rev.D
Notice
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© 2011 ROHM Co., Ltd. All rights reserved.
R1120A
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Rectifier Diode, Schottky, 1 Element, 0.1A, 30V V(RRM), Silicon, ROHS COMPLIANT, VMN2, 2 PIN
ROHM
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