DTC143THT2L [ROHM]
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, SC-89, 3 PIN;![DTC143THT2L](http://pdffile.icpdf.com/pdf2/p00231/img/icpdf/DTC143THT2L_1355730_icpdf.jpg)
型号: | DTC143THT2L |
厂家: | ![]() |
描述: | Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, SC-89, 3 PIN 开关 光电二极管 晶体管 |
文件: | 总3页 (文件大小:76K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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DTC143TM / DTC143TH / DTC143TE / DTC143TUA
DTC143TKA / DTC143TSA
Transistors
Digital transistors (built-in resistor)
DTC143TM / DTC143TH / DTC143TE /
DTC143TUA / DTC143TKA / DTC143TSA
!Equivalent circuit
!Features
1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with
complete isolation to allow negative biasing of the
input. They also have the advantage of almost
completely eliminating parasitic effects.
C
E
B
R1
3) Only the on/off conditions need to be set for operation,
making device design easy.
B : Base
C : Collector
E : Emitter
!Structure
PNP digital transistor
(Built-in resistor type)
!External dimensions (Units : mm)
1.2
DTC143TM
DTC143TH
1.6
0.2 0.8 0.2
0.85
( )
2
( )
2
(3)
( )
1
( )
1
( )
3
0.15Max.
Each lead has same dimensions
(1) Base
(1) Base
(2) Emitter
(3) Collector
(2) Emitter
(3) Collector
ROHM
:
VMT3
ROHM
EIAJ
:
EMT3 Flat lead
:
SC-89
Abbreviated symbol : 03
Abbreviated symbol : 03
DTC143TE
DTC143TUA
2.0 0.2
1.6 0.2
1.0 0.1
0.9 0.1
0.7 0.1
1.3 0.1
0.65 0.65
0.2
0.7 0.1
0.55 0.1
0.50.5
+0.1
+0.1
0.2
−0.05
(1)
(2)
0.2
−0.05
(1) (2)
0~0.1
0~0.1
(3)
(3)
(1) Emitter
(2) Base
(3) Collector
+0.1
−0
0.3
0.15 0.05
(1) Emitter
(2) Base
+0.1
ROHM
: EMT3
0.3
−0.05
0.15 0.05
All terminals have same dimensions
ROHM
EIAJ
:
UMT3
:
SC-70
(3) Collector
Abbreviated symbol : 03
Abbreviated symbol : 03
DTC143TKA
DTC143TSA
4
0.2
2 0.2
2.9 0.2
+0.2
1.1
−0.1
1.9 0.2
0.8 0.1
0.95 0.95
(2)
(1)
0~0.1
+
0.15
0.45
−
0.05
(3)
+
0.15
+
0.4
+0.1
0.45
2.5
(1) Emitter
(2) Base
(3) Collector
0.15
0.5
−
0.05
−
0.1
+0.1
−0.06
0.4
5
−0.05
ROHM
EIAJ
:
SMT3
(1) Emitter
(2) Collector
(3) Base
All terminals have same dimensions
:
SC-59
ROHM
EIAJ
:
SPT
(1) (2) (3)
Abbreviated symbol : 03
:
SC-72
DTC143TM / DTC143TH / DTC143TE / DTC143TUA
DTC143TKA / DTC143TSA
Transistors
!Absolute maximum ratings (Ta=25°C)
Limits(DTC143T
)
Parameter
Symbol
Unit
M
H
E
UA
KA
SA
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
V
V
V
CBO
CEO
EBO
50
50
5
V
V
V
I
C
100
mA
mW
°C
°C
Collector power dissipation
Junction temperature
Storage temperature
P
C
150
200
300
Tj
150
Tstg
−55~+150
!Electrical characteristics (Ta=25°C)
Parameter
Symbol Min.
Typ.
−
Max.
−
Unit
Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
BVCBO
BVCEO
BVEBO
50
50
5
V
V
I
I
I
C
=
50µA
−
−
C=
1mA
−
−
V
E
=50µA
I
CBO
EBO
CE(sat)
FE
−
−
0.5
0.5
0.3
600
6.11
−
µA
µA
V
V
CB
EB
=50V
Emitter cutoff current
I
−
−
V
=
4V
Collector-emitter saturation voltage
DC current transfer ratio
V
−
−
I
I
C/I
B
=
5mA/0.25mA
h
100
3.29
−
250
4.7
250
−
C=
1mA, VCE 5V
=
R1
kΩ
MHz
−
Input resistance
f
T
V
CE=10V, I
E=
−
5mA, f=100MHz
∗
Transition frequency
∗ Transition frequency of the device
!Packaging specifications
Package
VMT3
EMT3 Flat lead
Taping
EMT3
UMT3
SMT3
SPT
Taping
TP
Packaging type
Code
Taping
T2L
Taping
TL
Taping
T106
Taping
T146
T2L
Basic ordering
unit (pieces)
8000
8000
3000
3000
3000
5000
Type
DTC143TM
DTC143TH
DTC143TE
DTC143TUA
DTC143TKA
DTC143TSA
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
DTC143TM / DTC143TH / DTC143TE / DTC143TUA
DTC143TKA / DTC143TSA
Transistors
!Electrical characteristic curves
1k
1
VCE=5V
lC/lB
=20
500
500m
200
100
50
200m
100m
50m
Ta=100°C
25°C
−40°C
Ta=100°C
25°C
−40°C
20
10
5
20m
10m
5m
2
1
2m
1m
100µ 200µ 500µ 1m
2m
5m 10m 20m
50m 100m
100µ 200µ 500µ 1m
2m
5m 10m 20m
50m 100m
COLLECTOR CURRENT : I
C
(A)
COLLECTOR CURRENT : IC (A)
Fig.1 DC current gain vs.
collector current
Fig.2 Collector-emitter saturation
voltage vs. collector current
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Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN
ROHM
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