DTC143TKA [SECOS]
NPN Digital Transistors (Built-in Resistors); NPN数字晶体管（内置电阻）
| 型号： | DTC143TKA |
| 厂家： | 
SECOS HALBLEITERTECHNOLOGIE GMBH |
| 描述： | NPN Digital Transistors (Built-in Resistors) |
| 文件： | 总2页 (文件大小：206K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DTC143TE/DTC143TUA/DTC143TKA
DTC143TCA/TC143TSA
Elektronische Bauelemente
NPN Digital Transistors (Built-in Resistors)
FEATURES
* Built-in bias resistors enable the configuration of
an inverter circuit without connecting input resistors
(see equivalent circuit).
* Only the on/off confitions need to be set for operation,
making device design easy.
* The bias resistors consis of thin-film resistors with
compete isolation to allow negative biasing of the
input. They also have the advantage of almost
completely eliminating parasitic effects.
PIN CONNENCTIONS AND MARKING
DTC143TE
DTC143TUA
(1) Base
(1)Base
(2) Emitter
(3) Collector
(2)Emitter
(3)Collector
SOT-323
Abbreviated symbol: 03
Abbreviated symbol: 03
SOT-523
DTC143TKA
DTC143TCA
(1) Base
(1) Base
(2) Emitter
(2) Emitter
(3) Collector
(3) Collector
SOT-23
Abbreviated symbol: 03
SOT-23-3L
Abbreviated symbol: 03
DTC143TSA
(1) Emitter
(2) Collector
(3) Base
TO-92S
Any changing of specification will not be informed indivlidua
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
Page 1 of 2
DTC143TE/DTC143TUA/DTC143TKA
DTC143TCA/TC143TSA
Elektronische Bauelemente
NPN Digital Transistors (Built-in Resistors)
Absolute maximum ratings(Ta=25℃)
Limits (DTC143T□ )
Parameter
Symbol
Unit
E
UA
CA
50
50
5
KA
SA
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
V(BR)CBO
V(BR)CEO
V(BR)EBO
IC
V
V
V
100
mA
Collector Power dissipation
PC
150
200
300
mW
Junction temperature
Storage temperature
Tj
150
℃
℃
Tstg
-55~150
Electrical characteristics (Ta=25℃)
Parameter
Symbol
Min.
50
50
5
Typ
Max.
Unit
V
Conditions
Ic=50µA
Collector-base breakdown voltage
V(BR)CBO
Collector-emitter breakdown voltage V(BR)CEO
V
Ic=1mA
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
V(BR)EBO
ICBO
IEBO
VCE(sat)
hFE
V
IE=50µA
0.5
0.5
µA
µA
V
VCB=50V
VEB=4V
Collector-emitter saturation voltage
DC current transfer ratio
Input resistance
0.3
IC=5mA,IB=0.25mA
VCE=5V,IC=1mA
100
600
6.11
R1
3.29
4.7
KΩ
Transition frequency
fT
250
MHz
VO=10V ,IO=5mA,f=100MHz
Typical Characteristics
Any changing of specification will not be informed individua
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
Page 2 of 2
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