DTC124TM [ROHM]
Digital transistors (built-in resistor); 数字晶体管（内置电阻）
| 型号： | DTC124TM |
| 厂家： | 
ROHM |
| 描述： | Digital transistors (built-in resistor) |
| 文件： | 总5页 (文件大小：53K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DTC124TM / DTC124TE / DTC124TUA /
DTC124TKA / DTC124TSA
Transistors
Digital transistors (built-in resistor)
DTC124TM / DTC124TE / DTC124TUA /
DTC124TKA / DTC124TSA
zExternal dimensions (Unit : mm)
zFeatures
1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors (see equivalent circuit).
1.2
DTC124TM
0.2 0.8 0.2
(
)
2
(3)
(
)
1
2) The bias resistors consist of thin-film resistors with
complete of the input. They also have the advantage
of almost completely eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation,
making device design easy.
0.15Max.
(1) Base
(2) Emitter
(3) Collector
ROHM
: VMT3
Abbreviated symbol
: 05
DTC124TE
( )
1
( )
2
( )
3
0.8
1.6
zEquivalent circuit
(1) Emitter
(2) Base
(3) Collector
0.1Min.
ROHM
EIAJ
:
EMT3
:
SC-75A
Abbreviated symbol
: 05
C
DTC124TUA
B
R1
1.25
2.1
E
Each lead has same dimensions
(1) Emitter
(2) Base
(3) Collector
0.1Min.
B : Base
C : Collector
E : Emitter
ROHM
EIAJ
:
UMT3
:
SC-70
Abbreviated symbol
: 05
DTC124TKA
1.6
2.8
Each lead has same dimensions
0.3Min.
(1) Emitter
(2) Base
ROHM
EIAJ
:
SMT3
(3) Collector
:
SC-59
Abbreviated symbol
: 05
DTC124TSA
4
2
0.45
Taping specifications
0.45
2.5 0.5
5
)( )(
(1) Emitter
(2) Collector
(3) Base
ROHM
EIAJ
:
SPT
(
1
)
3
2
:
SC-72
1/3
DTC124TM / DTC124TE / DTC124TUA /
DTC124TKA / DTC124TSA
Transistors
zAbsolute maximum ratings (Ta=25°C)
Limits(DTC124T )
Parameter
Symbol
Unit
V
M
E
UA
50
KA
SA
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
VCBO
VCEO
VEBO
50
5
V
V
I
C
100
mA
150
Collector power dissipation
Junction temperature
Storage temperature
200
150
−55 to +150
300
Pc
Tj
mW
°C
Tstg
°C
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
−
−
−
−
−
−
−
Collector-base breakdown voltage
BVCBO
50
50
5
V
V
I
I
I
C
=50µA
=1mA
−
Collector-emitter breakdown voltage BVCEO
C
−
Emitter-base breakdown voltage
Collector cutoff current
BVEBO
V
E
=50µA
CB=50V
EB=4V
−
I
CBO
EBO
CE(sat)
FE
0.5
0.5
0.3
µA
µA
V
V
V
−
−
Emitter cutoff current
I
Collector-emitter saturation voltage
DC current transfer ratio
Input resistance
V
I
C/I
B
=10mA/1mA
=1mA
−
h
100 250 600
V
CE=5V, IC
−
R1
15.4
22
28.6 kΩ
−
−
Transition frequency
f
T
250
MHZ
V
CE=10V, IE=−5mA, f=100MHZ
Transition frequency of the device
zPackaging specifications
Package
VMT3
Taping
T2L
EMT3
Taping
TL
UMT3
SMT3
Taping
T146
SST3
Taping
TP
Packaging type
Code
Taping
T106
3000
5000
Basic ordering unit (pieces)
8000
3000
Type
3000
−
−
−
−
−
−
−
−
−
−
DTC124TM
−
−
−
−
DTC124TE
−
−
−
DTC124TUA
DTC124TKA
DTC124TSA
−
−
−
2/3
DTC124TM / DTC124TE / DTC124TUA /
DTC124TKA / DTC124TSA
Transistors
zElectrical characteristic curves
1k
1
VCE=5V
lC/lB=10
500
500m
200m
100m
50m
200
100
Ta=100˚C
Ta=100˚C
25˚C
25˚C
-40˚C
50
-40˚C
20
10
5
20m
10m
5m
2m
1m
2
1
100µ 200µ
500µ 1m
2m
5m 10m 20m
50m 100m
100µ 200µ
500µ 1m
2m
5m 10m 20m
50m 100m
COLLECTOR CURRENT : I
C(A)
COLLECTOR CURRENT : IC(A)
Fig.1 DC current gain vs. collector
current
Fig.2 Collector-emitter saturation
voltage vs. collector current
3/3
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document use silicon as a basic material.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.0
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