DTA114TE_09 [ROHM]
-100mA / -50V Digital transistors (with built-in resistors); -100mA / -50V数字晶体管（具有内置电阻）
| 型号： | DTA114TE_09 |
| 厂家： | 
ROHM |
| 描述： | -100mA / -50V Digital transistors (with built-in resistors) |
| 文件： | 总3页 (文件大小：139K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
-100mA / -50V Digital transistors
(with built-in resistors)
DTA114TM / DTA114TE / DTA114TUA / DTA114TKA
Applications
Inverter, Interface, Driver
Features
1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see
equivalent circuit).
2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input. They also
have the advantage of almost completely eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation, making the device design easy.
Structure
PNP epitaxial planar silicon transistor (Resistor built-in type)
Dimensions (Unit : mm)
DTA114TM
DTA114TE
0.7
1.6
0.3
1.2
0.32
0.55
(3)
(
)
3
(
)( )
2
1
0.22
(
)
2
( )
1
0.13
0.4 0.4
0.2
0.5
0.2
0.15
(1) Base
(2) Emitter
(3) Collector
(1) Emitter
(2) Base
(3) Collector
0.8
0.5
0.5
ROHM : VMT3
DTA114TUA
ROHM : EMT3
DTA114TKA
1.0
Abbreviated symbol : 94
Abbreviated symbol : 94
2.9
1.1
0.8
2.0
0.9
0.7
0.4
0.2
0.3
(
3
)
( )
3
(
2
)
( )
1
(
)
( )
1
2
0.650.65
1.3
(1) Emitter
(2) Base
(3) Collector
0.95 0.95
1.9
(1) Emitter
(2) Base
0.15
0.15
ROHM : UMT3
EIAJ : SC-70
ROHM : SMT3
EIAJ : SC-59
(3) Collector
Each lead has same dimensions
Each lead has same dimensions
Abbreviated symbol : 94
Abbreviated symbol : 94
Inner circuit
C
E
B
R1
B : Base
C : Collector
E : Emitter
R1=10kΩ
www.rohm.com
2009.06 - Rev.B
1/2
c
○ 2009 ROHM Co., Ltd. All rights reserved.
DTA114TM / DTA114TE / DTA114TUA / DTA114TKA
Data Sheet
Packaging specifications
VMT3
Taping
T2L
EMT3
Taping
TL
UMT3
Taping
T106
SMT3
Taping
T146
Package
Package type
Code
Basic ordering
unit (pieces)
8000
3000
3000
3000
Part No.
DTA114TM
DTA114TE
DTA114TUA
DTA114TKA
−
−
−
−
−
−
−
−
−
−
−
−
Absolute maximum ratings (Ta=25C)
Limits
Parameter
Symbol
Unit
DTA114TM DTA114TE DTA114TUA DTA114TKA
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
V
V
V
CBO
CEO
EBO
−50
−50
−5
V
V
V
I
C
−100
mA
mW
°C
°C
Collector power dissipation
Junction temperature
Storage temperature
P
C
150
200
Tj
Tstg
150
−55 to +150
Electrical characteristics (Ta=25C)
Parameter
Symbol
BVCBO
BVCEO
BVEBO
Min.
−50
−50
−5
−
Typ.
−
Max.
Unit
V
Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
−
−
−
I
I
I
C
=−50μA
=−1mA
−
V
C
−
V
E
=−50μA
CB=−50V
EB=−4V
I
CBO
EBO
CE(sat)
FE
−
−0.5
−0.5
−0.3
600
13
μA
μA
V
V
V
Emitter cutoff current
I
−
−
Collector-emitter saturation voltage
DC current transfer ratio
V
−
−
I
C/I
B
=−10mA/−1mA
h
100
7
250
10
250
−
V
CE=−5V, I
C
=−1mA
Input resistance
R
1
kΩ
MHz
−
Transition frequency
fT
∗
−
−
V
CE=−10V, I
E
=5mA, f=100MHz
∗ Characteristics of built-in transistor
Electrical characteristic curves
1k
−1
V
CE=−5V
lC/lB=20
500
−500m
200
100
−200m
−100m
−50m
Ta=100°C
25°C
−40°C
Ta=100°C
25°C
−40°C
50
20
10
5
−20m
−10m
−5m
2
1
−2m
−1m
−100μ −200μ −500μ −1m −2m
−5m −10m −20m −50m−100m
−100μ −200μ −500μ −1m −2m
−5m −10m −20m −50m−100m
COLLECTOR CURRENT : I (A)
C
COLLECTOR CURRENT : I (A)
C
Fig.1 DC current gain vs. collector
current
Fig.2 Collector-emitter saturation
voltage vs. collector current
www.rohm.com
2009.06 - Rev.B
2/2
c
○ 2009 ROHM Co., Ltd. All rights reserved.
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Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
be taken into account when designing circuits for mass production.
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However, should you incur any damage arising from any inaccuracy or misprint of such
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© 2009 ROHM Co., Ltd. All rights reserved.
R0039
A
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