DAN202U_11 [ROHM]
Switching Diode; 开关二极管
| 型号： | DAN202U_11 |
| 厂家： | 
ROHM |
| 描述： | Switching Diode |
| 文件： | 总3页 (文件大小：1005K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Data Sheet
Switching Diode
DAN202U
Applications
Dimensions (Unit : mm)
Land size figure (Unit : mm)
Ultra high speed switching
1.3
2.0±0.2
0.3±0.1
Each lead has same dimension
0.65
0.15±0.05
Features
(3)
1) Small mold type (UMD3).
2) High reliability.
0.8MIN
UMD3
0～0.1
(2)
(1)
（0.65）
（0.65）
Construction
Structure
0.7±0.1
0.9±0.1
1.3±0.1
Silicon epitaxial planar
ROHM : UMD3
JEDEC : SOT-323
JEITA : SC-70
dot (year week factory)
Taping specifications (Unit : mm)
φ1.55±0.05
2.0±0.05
4.0±0.1
0.3±0.1
2.25±0.1
ꢀꢀꢀꢀ 0
φ0.5±0.05
4.0±0.1
1.25±0.1
Absolute maximum ratings (Ta=25°C)
Parameter
Limits
Symbol
VRM
VR
Unit
V
Reverse voltage (repetitive peak)
Reverse voltage (DC)
80
80
300
V
Forward current (Single)
Average rectified forward current (Single)
Surge current (t=1us)
Power dissipation
IFM
mA
mA
A
100
Io
Isurge
Pd
4
200
mW
°C
°C
Junction temperature
150
Tj
Storage temperature
55 to 150
Tstg
Electrical characteristics (Ta=25°C)
Parameter
Forward voltage
Symbol
Min.
Typ.
Max.
1.2
0.1
3.5
4
Unit
V
Conditions
VF
IR
IF=100mA
-
-
-
-
-
-
-
-
Reverse current
VR=70V
μA
pF
ns
Capacitance between terminals
Reverse recovery time
VR=6V , f=1MHz
VR=6V , IF=5mA , RL=50Ω
Ct
trr
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© 2011 ROHM Co., Ltd. All rights reserved.
2011.06 - Rev.A
1/2
Data Sheet
DAN202U
ꢀ
Ta=150℃
Ta=125℃
10
100
10
10000
1000
100
10
Ta=75℃
Ta=125℃
f=1MHz
Ta=75℃
Ta=25℃
Ta=25℃
Ta=150℃
1
Ta=-25℃
Ta=-25℃
1
1
0.1
0.01
0.1
0.1
0
10 20 30 40 50 60 70 80
0
5
10
15
20
0
100 200 300 400 500 600 700 800 900 100
0
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
10
9
8
7
6
5
4
3
2
1
0
100
90
80
70
60
50
40
30
20
10
0
950
940
930
920
910
900
Ta=25℃
VR=80V
n=10pcs
Ta=25℃
Ta=25℃
IF=100mA
n=30pcs
VR=6V
f=1MHz
n=10pcs
AVE:9.655nA
AVE:1.17pF
AVE:921.7mV
VF DISPERSION MAP
IR DISPERSION MAP
Ct DISPERSION MAP
20
15
10
5
10
9
8
7
6
5
4
3
2
1
0
5
4
3
2
1
0
Ta=25℃
VR=6V
IF=5mA
RL=50Ω
n=10pcs
1cyc
Ifsm
Ifsm
8.3ms 8.3ms
1cyc
8.3ms
AVE:1.93ns
AVE:3.50A
0
1
10
100
IFSM DISRESION MAP
trr DISPERSION MAP
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
10
9
8
7
6
5
4
3
2
1
0
100
10
1
1000
100
10
Rth(j-a)
Ifsm
t
Rth(j-c)
Mounted on epoxy board
AVE:2.54kV
AVE:0.97kV
IM=1mA
IF=10mA
time
300us
10
1ms
C=200pF
R=0Ω
C=100pF
R=1.5kΩ
1
0.001 0.01
0.1
1
10
100
0.1
1
100 1000
TIME:t(ms)
IFSM-t CHARACTERISTICS
TIME:t(s)
ESD DISPERSION MAP
Rth-t CHARACTERISTICS
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© 2011 ROHM Co., Ltd. All rights reserved.
2/2
2011.06 - Rev.A
Notice
N o t e s
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More detail product informations and catalogs are available, please contact us.
ROHM Customer Support System
http://www.rohm.com/contact/
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© 2011 ROHM Co., Ltd. All rights reserved.
R1120A
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