DAN202KFH [ROHM]
Rectifier Diode, 2 Element, 0.1A, 80V V(RRM), Silicon, SMD3, SC-59, 3 PIN;
| 型号： | DAN202KFH |
| 厂家： | 
ROHM |
| 描述： | Rectifier Diode, 2 Element, 0.1A, 80V V(RRM), Silicon, SMD3, SC-59, 3 PIN 光电二极管 |
| 文件： | 总3页 (文件大小：796K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Data Sheet
AEC-Q101 Qualified
Switching Diode
DAN202KFH
Applications
Dimensions (Unit : mm)
Land size figure (Unit : mm)
Ultra high speed switching
0.8MIN.
2.9±0.2
各リードとも
Each lead has same dimension
＋0.1
ꢀ－0.05
0.4
＋0.1
－0.06
Features
0.15
0.95
(3)
1) Small mold type. (SMD3)
2) High reliability
0～0.1
1.9
SMD3
(2)
(1)
0.8±0.1
0.95
0.95
1.9±0.2
Construction
1.1±0.2
0.01
Silicon epitaxial planar
Structure
ROHM : SMD3
JEDEC :S0T-346
JEITA : SC-59
week code
Taping specifications (Unit : mm)
φ1.5±0.1
0
2.0±0.05
4.0±0.1
0.3±0.1
ꢀꢀꢀꢀꢀ
φ1.05MIN
4.0±0.1
3.2±0.1
1.35±0.1
Absolute maximum ratings (Ta=25°C)
Parameter
Limits
Symbol
VRM
VR
Unit
Reverse voltage (repatitive peak)
Reverse voltage (DC)
80
80
V
V
Forward current (Single)
IFM
300
450
100
150
4
mA
mA
mA
mA
A
Forward current (Double)
IFM
Average rectified forward current (Single)
Io
Average rectified forward current (double)
Io
Surge current (t=1us) (Single)
Surge current (t=1us) (Double)
Power dissipation
Isurge
Isurge
Pd
6
A
200
150
mW
°C
°C
Junction temperature
Tj
Storage temperature
55 to 150
Tstg
Electrical characteristics (Ta=25°C)
Parameter
Forward voltage
Conditions
Symbol
Min.
Typ.
Max.
1.2
0.1
3.5
4
Unit
V
VF
IR
IF=100mA
-
-
-
-
-
-
-
-
Reverse current
VR=70V
μA
pF
ns
Capacitance between terminals
Reverse recovery time
VR=6V , f=1MHz
VR=6V , IF=5mA , RL=50Ω
Ct
trr
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© 2011 ROHM Co., Ltd. All rights reserved.
2011.06 - Rev.C
1/2
Data Sheet
DAN202KFH
ꢀ
Ta=150℃
Ta=125℃
10
10000
1000
100
10
100
Ta=75℃
Ta=125℃
f=1MHz
Ta=75℃
Ta=25℃
10
1
Ta=150℃
Ta=25℃
1
Ta=-25℃
Ta=-25℃
1
0.1
0.01
0.1
0.1
0
100 200 300 400 500 600 700 800 900 1000
0
10 20 30 40 50 60 70 80
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
0
5
10
15
REVERSE VOLTAGE:VR(V)
20
FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS
VR-Ct CHARACTERISTICS
10
9
8
7
6
5
4
3
2
1
0
950
940
930
920
910
900
100
90
80
70
60
50
40
30
20
10
0
Ta=25℃
VR=80V
n=30pcs
Ta=25℃
IF=100mA
n=30pcs
Ta=25℃
VR=6V
f=1MHz
n=10pcs
AVE:9.655nA
AVE:1.17pF
AVE:921.7m
VF DISPERSION MAP
IR DISPERSION MAP
Ct DISPERSION MAP
10
9
8
7
6
5
4
3
2
1
0
20
15
10
5
5
4
3
2
1
0
Ta=25℃
VR=6V
IF=5mA
RL=50Ω
n=10pcs
1cyc
8.3ms
Ifsm
Ifsm
8.3ms 8.3ms
1cyc
AVE:3.50A
AVE:1.93ns
0
1
10
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
100
IFSM DISPERSION MAP
trr DISPERSION MAP
10
9
8
7
6
5
4
3
2
1
0
100
10
1
1000
100
10
Rth(j-a)
Ifsm
t
Rth(j-c)
Mounted on epoxy board
AVE:2.54kV
AVE:0.97kV
IM=100mA
IF=10A
time
1ms
300us
C=200pF
R=0Ω
C=100pF
R=1.5kΩ
1
0.001 0.01
0.1
1
10
100
0.1
1
TIME:t(ms)
Rth-t CHARACTERISTICS
10
100 1000
TIME:t(ms)
IFSM-t CHARACTERISTICS
ESD DISPERSION MAP
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© 2011 ROHM Co., Ltd. All rights reserved.
2/2
2011.06 - Rev.C
Notice
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© 2011 ROHM Co., Ltd. All rights reserved.
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