DAN202N3 [CYSTEKEC]
High-Speed double diode; 高速双二极管型号: | DAN202N3 |
厂家: | CYSTECH ELECTONICS CORP. |
描述: | High-Speed double diode |
文件: | 总4页 (文件大小:170K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Spec. No. : C328N3C
Issued Date : 2003.05.14
Revised Date
CYStech Electronics Corp.
Page No. : 1/4
High –speed double diode
DAN202N3
Description
The DAN202N3 consists of two high-speed switching diodes with common cathodes, fabricated in planar
technology, and encapsulated in the small SOT-23 plastic SMD package.
Equivalent Circuit
DAN202N3
SOT-23
Common cathode
1
2
3
1:Anode
Anode
Anode
2:Anode
3:Common cathode
Features
• Small plastic SMD package
• High switching speed: max. 4ns
• Continuous reverse voltage: max. 80V
• Repetitive peak reverse voltage: max. 80V
• Repetitive peak forward current: max. 300mA.
Applications
• High-speed switching in thick and thin-film circuits.
DAN202N3
CYStek Product Specification
Spec. No. : C328N3C
Issued Date : 2003.05.14
Revised Date
CYStech Electronics Corp.
Page No. : 2/4
Absolute Maximum Ratings @TA=25℃
Parameters
Repetitive peak reverse voltage
Continuous reverse voltage
Continuous forward current
Repetitive peak forward current
Non-repetitive peak forward current
@square wave, Tj=125℃ prior to surge t=1µs
t=1ms
Symbol
VRRM
VR
Min
Max
80
Unit
V
-
-
-
80
V
IF
100
300
mA
mA
IFRM
-
-
-
4
1
A
A
IFSM
0.5
250
150
+150
A
t=1s
Total power dissipation(Note 1)
Junction Temperature
Ptot
Tj
Tstg
mW
°C
°C
-
Storage Temperature
-65
Note 1: Device mounted on an FR-4 PCB.
Electrical Characteristics @ Tj=25℃ unless otherwise specified
Parameters Symbol Conditions
Min Typ. Max Unit
IF=1mA
715 mV
IF=10mA
855 mV
Forward voltage
VF
-
-
-
-
IF=50mA
1
V
V
IF=150mA
VR=25V
1.25
30
2.5
60
nA
µA
µA
µA
VR=75V
Reverse current
IR
VR=25V,Tj=150℃
100
VR=75V,Tj=150℃
Diode capacitance
Cd
trr
VR=0V, f=1MHz
-
-
-
-
1.5
pF
when switched from IF=10mA to
IR=10mA,RL=100Ω, measured
at IR=1mA
when switched from IF=10mA
tr=20ns
Reverse recovery time
4
ns
Forward recovery voltage
Vfr
-
-
1.75
V
Thermal Characteristics
Symbol
Parameter
Conditions
Value
Unit
℃
Rth,j-tp
Rth, j-a
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
360
500
/W
/W
Note 1
℃
Note 1: Device mounted on an FR-4 PCB.
DAN202N3
CYStek Product Specification
Spec. No. : C328N3C
Issued Date : 2003.05.14
Revised Date
CYStech Electronics Corp.
Page No. : 3/4
Characteristic Curves
Forward Current vs Forward Voltage
Forward Current vs Ambient Temperature
275
250
225
200
175
150
125
100
75
250
225
200
175
150
125
100
75
single diode loaded
double diode loaded
50
50
25
25
0
0
0
0.2 0.4 0.6 0.8
1
1.2 1.4
0
50
100
150
200
Ambient Temperature---Ta(℃)
Forward Voltage---VF(V)
Non-repetitive peak forward
current vs pulse duration
Diode Capacitance vs Reverse Voltage
100
10
1
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0.1
1
10
100
1000
10000
0
2
4
6
8
10 12 14 16
Pulse Duration---tp(μs)
Reverse Voltage---VR(V)
DAN202N3
CYStek Product Specification
Spec. No. : C328N3C
Issued Date : 2003.05.14
Revised Date
CYStech Electronics Corp.
Page No. : 4/4
SOT-23 Dimension
Marking:
A
L
A4
3
S
B
1
2
3-Lead SOT-23 Plastic
Surface Mounted Package
CYStek Package Code: N3
V
G
Style: Pin 1.Anode 2.Anode
3.Common cathode
C
D
K
H
J
*: Typical
Inches
Millimeters
Inches
Min. Max.
Millimeters
DIM
DIM
Min.
Max.
Min.
Max.
3.04
1.60
1.30
0.50
2.30
0.10
Min.
Max.
0.177
0.67
1.15
2.75
0.65
A
B
C
D
G
H
0.1102 0.1204
0.0472 0.0630
0.0335 0.0512
0.0118 0.0197
0.0669 0.0910
0.0005 0.0040
2.80
1.20
0.89
0.30
1.70
0.013
J
K
L
0.0034 0.0070
0.0128 0.0266
0.0335 0.0453
0.0830 0.1083
0.0098 0.0256
0.085
0.32
0.85
2.10
0.25
S
V
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: 42 Alloy ; solder plating
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
DAN202N3
CYStek Product Specification
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