2SK2503_1 [ROHM]

4V Drive Nch MOS FET; 4V驱动N沟道MOS FET


型号：	2SK2503_1
厂家：	ROHM
描述：	4V Drive Nch MOS FET 4V驱动N沟道MOS FET 驱动
文件：	总6页 (文件大小：94K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

2SK2503

Transistors

4V Drive Nch MOS FET

2SK2503

zStructure

zExternal dimensions (Unit : mm)

Silicon N-channel MOS FET

CPT3

6.5

5.1

2.3

0.5

zFeatures

1) Low On-resistance.

2) Fast switching speed.

3) Wide SOA (safe operating area).

4) 4V drive.

0.75

0.65

2.3

0.9

(1)

2.3

(1)Gate

5) Drive circuits can be simple.

6) Parallel use is easy.

(3)

(2)

0.5

1.0

(2)Drain

(3)Source

Abbreviated symbol : K2503

zApplications

Switching

zPackaging specifications

zInner circuit

Package

Type Code

Taping

Basic ordering unit (pieces)

2SK2503

2500

(1)

(2)

(3)

(1) Gate

(2) Drain

(3) Source

zAbsolute maximum ratings (Ta=25°C)

Parameter

Drain-source voltage

Gate-source voltage

Symbol

Limits

Unit

DSS

GSS

Continuous

Pulsed

Drain current

∗

Continuous

Pulsed

Reverse drain

current

∗

DRP

°C

Total power dissipation(Tc=25°C

)

Tch

Tstg

150

Channel temperature

−55 to +150

Storage temperature

≤ 10µs, Duty cycle ≤ 1%

∗

Rev.A

1/5

2SK2503

Transistors

zElectrical characteristics (Ta=25°C)

Parameter

Symbol Min.

Typ.

Max.

Unit

Test Conditions

Gate-source leakage

GSS

(BR)DSS

DSS

−

100

−

20V, VDS=0V

Drain-source breakdown voltage

Zero gate voltage drain current

Gate threshold voltage

=1mA, VGS=0V

µA

DS=60V, VGS=0V

GS(th)

1.0

−

2.5

DS=10V, I =1mA

0.11 0.135

=2.5A, VGS=10V

=2.5A, VGS=4V

=2.5A, VDS=10V

DS=10V

Static drain-source on-state

resistance

RDS(on)

Ω

−

0.17

−

0.20

−

∗

Forward transfer admittance

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

4.0

−

Ciss

520

240

100

5.0

−

oss

rss

d(on)

−

GS=0V

−

f=1MHz

−

=2.5A, VDD=30V

−

VGS=10V

Turn-off delay time

Fall time

d(off)

−

=12Ω

−

=10Ω

≤

300 s, Duty cycle ≤ 1%

∗

Rev.A

2/5

2SK2503

Transistors

zElectrical characteristics curve

V_DS

Pulsed

=10V

Ta=25°C

Pulsed

100µs

Ta=125°C

10V

75°C

25°C

−25°C

10ms

0.5

0.2

0.1

0.5

0.05

V_GS=3V

0.02

0.01

=25°C

Single pulse

0.1

0.5

10 20

50 100

DRAIN-SOURCE VOLTAGE : V_DS(V)

GATE-SOURCE VOLTAGE : V_GS(V)

Fig.1 Maximum Safe Operating Area

Fig.2 Typical Output Characteristics

Fig.3 Typical Transfer Characteristics

4.0

3.0

2.0

V_GS

Pulsed

=10V

V_GS

Pulsed

=4V

V_DS=10V

I_D=1mA

Ta=125°C

75°C

Ta=125°C

75°C

25°C

0.5

−25°C

25°C

−25°C

0.2

0.1

0.2

0.1

1.0

0.05

0.02

0.01

0.02

0.01

0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10.0

0.01 0.02 0.05 0.1 0.2

0.5

−50 −25

25 25 75 100 125 150

DRAIN CURRENT : I_D(A)

CHANNEL TEMPERATURE : Tch (°C)

Fig.4 Gate Threshold Voltage

vs. Channel Temperature

Fig.5 Static Drain-Source On-State

Fig.5 Resistance vs. Drain Current ( Ι )

Fig.6 Static Drain-Source On-State

Fig.6 Resistance vs. Drain Current ( ΙΙ )

0.3

100

0.6

Ta=25°C

Pulsed

V_DS

Pulsed

=10V

V_GS

Pulsed

=10V

0.5

0.4

0.3

0.2

0.1

Ta= −25°C

25°C

=5A

75°C

125°C

2.5A

I =5A

0.5

2.5A

0.1

0.2

0.1

0.01 0.02 0.05 0.1 0.2 0.5

2.0 5.0 10

−50 −25

25 50 75 100 125 150

GATE-SOURCE VOLTAGE : V_GS(V)

CHANNEL TEMPERATURE : Tch (°C)

DRAIN CURRENT : I_D(A)

Fig.7 Static Drain-Source On-State Resistance

vs. Gate-Source Voltage

Fig.8 Static Drain-Source On-State Resistance

vs. Channel Temperature

Fig.9 Forward Transfer Admittance

vs. Drain Current

Rev.A

3/5

2SK2503

Transistors

10000

5000

V_GS=0V

1MHz

V_GS0V

Pulsed

25°C

=25°C

Pulsed

V_GS=10V

Ta=125°C

75°C

2000

1000

500

25°C

−25°C

0.5

C_iss

C_oss

0.2

0.1

0.5

200

100

0.2

0.1

0.05

0.02

0.01

0.05

0.5

1.0

1.5

0.5

1.0

1.5

0.1 0.2 0.5

10 20

50 100

SOURCE-DRAIN VOLTAGE : V_SD(V)

DRAIN-SOURCE VOLTAGE : V_DS(V)

Fig.10 Reverse Drain Current

Fig.11 Reverse Drain Current

Fig.12 Typical Capacitance

vs. Drain-Source Voltage

vs. Source-Drain Voltage ( Ι )

vs. Source-Drain Voltage ( ΙΙ )

1000

500

1000

500

Ta=25°C

di/dt=50A/µs

DD=30V

GS=10V

VGS=0V

Pulsed

R =10Ω

200

100

Pulsed

d(off)

100

d(on)

0.1

0.2

0.5

0.05 0.1 0.2

0.5

REVERSE DRAIN CURRENT : IDR (A)

DRAIN CURRENT : I

(A)

Fig.14 Reverse Recovery Time

Fig.13 Switching characteristics

(See Figures 16 and 17 for

vs. Reverse Drain Current

the measurement circuit and

resultant waveforms)

D=1

0.5

0.2

0.1

0.05

0.02

0.1

Tc=25°C

_th(ch-c)(t)=r (t) θ_{th (ch-c)}

θ_th(ch-c)=6.25°C/W

0.01

Single pulse

^0.001¹0µ

100µ

10m

100m

PULSE WIDTH : PW (s)

Fig.15 Normalized Transient Thermal Resistance vs. Pulse Width

Rev.A

4/5

2SK2503

Transistors

zSwitching characteristics measurement circuit

Pulse Width

90%

50%

10%

50%

V_GS

V_DS

I_D

V_DS

R_L

D.U.T.

10%

R_G

10%

90%

V_DD

90%

t_d(on)

t_r

t_d(off)

t_off

t_on

Fig.15 Switching Time Test Circuit

Fig.16 Switching Time Waveforms

Rev.A

5/5

Appendix

Notes

No technical content pages of this document may be reproduced in any form or transmitted by any

means without prior permission of ROHM CO.,LTD.

The contents described herein are subject to change without notice. The specifications for the

product described in this document are for reference only. Upon actual use, therefore, please request

that specifications to be separately delivered.

Application circuit diagrams and circuit constants contained herein are shown as examples of standard

use and operation. Please pay careful attention to the peripheral conditions when designing circuits

and deciding upon circuit constants in the set.

Any data, including, but not limited to application circuit diagrams information, described herein

are intended only as illustrations of such devices and not as the specifications for such devices. ROHM

CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any

third party's intellectual property rights or other proprietary rights, and further, assumes no liability of

whatsoever nature in the event of any such infringement, or arising from or connected with or related

to the use of such devices.

Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or

otherwise dispose of the same, no express or implied right or license to practice or commercially

exploit any intellectual property rights or other proprietary rights owned or controlled by

ROHM CO., LTD. is granted to any such buyer.

Products listed in this document are no antiradiation design.

The products listed in this document are designed to be used with ordinary electronic equipment or devices

(such as audio visual equipment, office-automation equipment, communications devices, electrical

appliances and electronic toys).

Should you intend to use these products with equipment or devices which require an extremely high level of

reliability and the malfunction of with would directly endanger human life (such as medical instruments,

transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other

safety devices), please be sure to consult with our sales representative in advance.

About Export Control Order in Japan

Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control

Order in Japan.

In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)

on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.

Appendix1-Rev1.1

2SK2503_1 [ROHM]

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