2SK2504TL [ROHM]
4V Drive Nch MOS FET; 4V驱动N沟道MOS FET型号: | 2SK2504TL |
厂家: | ROHM |
描述: | 4V Drive Nch MOS FET |
文件: | 总6页 (文件大小:95K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
2SK2504
Transistors
4V Drive Nch MOS FET
2SK2504
zStructure
zExternal dimensions (Unit : mm)
Silicon N-channel MOS FET
CPT3
6.5
5.1
2.3
0.5
zFeatures
1) Low On-resistance.
2) Fast switching speed.
3) Wide SOA (safe operating area).
4) 4V drive.
0.75
0.65
2.3
0.9
(1)
2.3
(1)Gate
5) Drive circuits can be simple.
6) Parallel use is easy.
(3)
(2)
0.5
1.0
(2)Drain
(3)Source
Abbreviated symbol : K2504
zApplications
Switching
zPackaging specifications
zInner circuit
Package
Type Code
Taping
TL
Basic ordering unit (pieces)
2SK2504
2500
(1)
(2)
(3)
(1) Gate
(2) Drain
(3) Source
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Symbol
Limits
100
Unit
V
DSS
GSS
V
V
V
±
20
5
Continuous
Pulsed
I
D
A
Drain current
∗
I
DP
20
A
Continuous
Pulsed
I
DR
5
A
Reverse drain
current
∗
I
DRP
20
20
A
P
D
W
°C
°C
Total power dissipation(Tc=25°C
)
Tch
Tstg
150
Channel temperature
−55 to +150
Storage temperature
Pw
≤ 10µs, Duty cycle ≤ 1%
∗
Rev.A
1/5
2SK2504
Transistors
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min.
Typ.
−
Max.
Unit
nA
V
Test Conditions
Gate-source leakage
I
GSS
(BR)DSS
DSS
−
100
−
±
100
−
V
GS
=
±
20V, VDS=0V
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
V
−
I
D
=1mA, VGS=0V
I
−
10
µA
V
V
V
DS=100V, VGS=0V
V
GS(th)
1.0
−
−
2.5
0.22
0.28
−
DS=10V, I =1mA
D
0.18
0.25
−
I
I
I
D
D
D
=2.5A, VGS=10V
=2.5A, VGS=4V
=2.5A, VDS=10V
DS=10V
Static drain-source on-state
resistance
RDS(on)
Ω
−
∗
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Y
fs
4.0
−
S
Ciss
520
175
60
5.0
20
50
20
−
pF
pF
pF
ns
ns
ns
ns
V
V
C
oss
rss
d(on)
−
−
GS=0V
C
−
−
f=1MHz
t
t
−
−
I
D
=2.5A, VDD=50V
t
r
−
−
VGS=10V
Turn-off delay time
Fall time
d(off)
−
−
R
L
=20Ω
t
f
−
−
R
G
=10Ω
Pw
≤
300 s, Duty cycle ≤ 1%
µ
∗
Rev.A
2/5
2SK2504
Transistors
zElectrical characteristics curve
10
50
10
5
VDS
Pulsed
=10V
Ta=25°C
10V
8V
Pulsed
9
8
7
6
5
4
3
2
100µs
6V
Ta=125°C
75°C
5V
2
1
10
5
4V
25°C
−25°C
0.5
0.2
0.1
1
0.5
VGS=3V
0.05
1
0
0.02
0.01
Tc=25°C
Single pulse
0.1
1
0
1
2
3
4
5
5
10
50 100 200
0
1
2
3
4
5
6
DRAIN-SOURCE VOLTAGE : VDS (V)
DRAIN-SOURCE VOLTAGE : VDS (V)
GATE-SOURCE VOLTAGE : VGS (V)
Fig.1 Maximum Safe Operating Area
Fig.2 Typical Output Characteristics
Fig.3 Typical Transfer Characteristics
10
1
10
5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
VGS
Pulsed
=
10V
VGS
Pulsed
=4V
VDS=10V
lD=1mA
2
Ta=125°C
75°C
Ta=125°C
75°C
1
0.5
25°C
25°C
−25°C
−25°C
0.2
0.1
0.1
0.05
0.5
0
−50 −25
0.01
0.01
0.01
0.01
0.1
1
10
0.01 0.02 0.05 0.1 0.2
0.5 1.0 2.0 5.0 10
0
25 50 75 100 125 150
DRAIN CURRENT : ID (A)
DRAIN CURRENT : ID (A)
CHANNEL TEMPERATURE : Tch (°C)
Fig.4 Gate Threshold Voltage
vs. Channel Temperature
Fig.5 Static Drain-Source On-State Resistance Fig.6 Static Drain-Source On-State Resistance
vs. Drain Current ( Ι )
ꢀꢀ vs. Drain Current ( ΙΙ )
0.6
100
0.6
0.5
0.4
0.3
Ta=25°C
Pulsed
VDS
Pulsed
=10V
VGS
Pulsed
=10V
50
20
10
5
0.4
0.2
0
Ta= −25°C
25°C
75°C
125°C
lD=5A
2.5A
2
1
ID=5A
0.2
2.5A
0.5
0.1
0
0.2
0.1
0.01 0.02 0.05 0.1 0.2 0.5
1
2.0 5.0 10
0
5
10
15
20
−50 −25
0
25 50 75 100 125 150
GATE-SOURCE VOLTAGE : VGS (V)
CHANNEL TEMPERATURE : Tch (°C)
DRAIN CURRENT : ID (A)
Fig.7 Static Drain-Source On-State Resistance
vs. Gate-Source Voltage
Fig.8 Static Drain-Source On-State Resistance
vs. Channel Temperature
Fig.9 Forward Transfer Admittance
vs. Drain Current
Rev.A
3/5
2SK2504
Transistors
10
5
10000
1000
VGS=0V
T
VGS
a
=
25°C
0V
1MHz
T
a
=25°C
Pulsed
=
Pulsed
5
f
=
VGS=10V
0V
Ta=125°C
75°C
1
2
25°C
−25°C
0.5
C
iss
1
C
oss
rss
0.5
0.1
100
10
C
0.2
0.1
0.05
0.05
0.01
0
0.5
1.0
1.5
0
0.5
1.0
1.5
0.1
1
10
100
SOURCE-DRAIN VOLTAGE : VSD (V)
SOURCE-DRAIN VOLTAGE : VSD (V)
DRAIN-SOURCE VOLTAGE : VDS (V)
Fig.10 Reverse Drain Current
Fig.11 Reverse Drain Current
Fig.12 Typical Capacitance
vs. Source-Drain Voltage ( Ι )
vs. Source-Drain Voltage ( ΙΙ )
vs. Drain-Source Voltage
1000
500
1000
500
Ta=25°C
Ta=25°C
di/dt=100A/µs
V
DD=30V
GS=10V
V
GS=0V
V
Pulsed
R =10Ω
G
200
100
50
Pulsed
t
d(off)
100
50
t
f
t
r
20
10
5
t
d(on)
10
2
0.1
0.2
0.5
1
2
5
10
0.05 0.1 0.2
0.5
1
2
5
10
REVERSE DRAIN CURRENT : IDR (A)
DRAIN CURRENT : I
D
(A)
Fig.14 Reverse Recovery Time
Fig.13 Switching characteristics
(See Figures 16 and 17 for
vs. Reverse Drain Current
the measurement circuit and
resultant waveforms)
10
1
D=1
0.5
0.2
0.1
0.05
0.02
0.1
Tc=25°C
θ
th(ch-c) (t)=r (t) θth(ch-c)
0.01
θth(ch-c)=6.25°C/W
0.01
PW
PW
T
Single pulse
D=
1
T
0.001
10µ
100µ
1m
PULSE WIDTH : PW (s)
Fig.15 Normalized Transient Thermal Resistance vs. Pulse Width
10m
100m
10
Rev.A
4/5
2SK2504
Transistors
zSwitching characteristics measurement circuit
Pulse Width
90%
50%
10%
50%
VGS
VGS
VDS
ID
VDS
RL
D.U.T.
10%
RG
10%
90%
VDD
90%
td(on)
tr
t
f
td(off)
toff
ton
Fig.16 Switching Time Test Circuit
Fig.17 Switching Time Waveforms
Rev.A
5/5
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1
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