2SD2343P [ROHM]
Small Signal Bipolar Transistor, 2A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-126FP, 3 PIN;![2SD2343P](http://pdffile.icpdf.com/pdf2/p00296/img/icpdf/2SD2343-Q_1789320_icpdf.jpg)
型号: | 2SD2343P |
厂家: | ![]() |
描述: | Small Signal Bipolar Transistor, 2A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-126FP, 3 PIN 局域网 开关 晶体管 |
文件: | 总1页 (文件大小:63K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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2SC4132 / 2SD1857 / 2SD2343
Transistors
Power Transistor (120V, 1.5A)
2SC4132 / 2SD1857 / 2SD2343
!Features
!External dimensions (Units : mm)
CEO
1) High breakdown voltage. (BV
= 120V)
2) Low collector output capacitance.
2SC4132
4.0
2.5
1.0
0.5
CB
(Typ. 20pF at V = 10V)
(
)
1
T
3) High transition frequency. (f = 80MHz)
(
)
2
3
4) Complements the 2SB1236.
(
)
(1) Base(Gate)
(2) Collector(Drain)
(3) Emitter(Source)
ROHM : MPT3
EIAJ : SC-62
!Absolute maximum ratings (Ta = 25°C)
Parameter
Symbol
Limits
Unit
V
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
VCBO
VCEO
VEBO
120
120
2SD1857
V
6.8
5
V
2.5
I
C
2
A
Collector current
I
CP
3
A
1
2
*
0.65Max.
0.5
*
2SC4132
2
0.5
Collector power
dissipation
W
2SD1857
2SD2343
1
1.5
( )
( ) ( )
1
2 3
P
C
2.54 2.54
1.05
0.45
W (Tc = 25°C)
5
Taping specifications
Junction temperature
Storage temperature
Tj
150
°C
°C
(1) Emitter
(2) Collector
(3) Base
Tstg
−55~+150
1
2
Single pulse Pw = 10ms
When mounted on a 40 × 40 × 0.7mm ceramic board.
*
ROHM : ATV
2SD2343
*
7.8
3.2
Tor 3.3
φ
Rear 3.19
φ
!Packaging specifications and hFE
C0.7
Type
2SC4132 2SD1857 2SD2343
1.6
0.95
Package
MPT3
PQR
ATV
PQR
−
TV2
2500
TO-126FP
1.75
0.8
2.3
hFE
PQ
−
−
1000
Marking
Code
CB
*
2.3
0.7
1.76
T100
1000
Basic ordering unit (pieces)
(1) Emitter
(2) Collector
(3) Base
( ) ( ) (
)
1 2
3
Denotes hFE
*
ROHM : TO-126FP
!Electrical characteristics (Ta = 25°C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
BVCBO
BVCEO
BVEBO
120
120
5
−
−
−
−
−
−
−
−
80
20
−
−
−
V
V
I
I
I
C
C
E
= 50µA
= 1mA
= 50µA
CB = 100V
EB = 4V
V
I
CBO
EBO
CE(sat)
−
−
−
82
82
−
1
µA
µA
V
V
V
Emitter cutoff current
I
1
Collector-emitter saturation voltage
V
0.4
390
270
−
I
C/I
B
= 1A/0.1A
*
*
2SC4132,2SD1857
2SD2343
−
−
MHz
pF
DC current
transfer ratio
hFE
V
CE/I
C
= 5V/0.1A
Transition frequency
Output capacitance
f
T
V
V
CE = 5V , I = −0.1A , f = 30MHz
CB = 10V , IE = 0A , f = 1MHz
E
Cob
−
−
Measured using pulse current.
*
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2SD2345J
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Small Signal Bipolar Transistor, 0.05A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT, SSMINI3-F1, SC-89, 3 PIN
PANASONIC
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