2SD2345G [PANASONIC]
Small Signal Bipolar Transistor, 0.05A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT, SSMINI3-F3, 3 PIN;
| 型号： | 2SD2345G |
| 厂家： | 
PANASONIC |
| 描述： | Small Signal Bipolar Transistor, 0.05A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT, SSMINI3-F3, 3 PIN 放大器 光电二极管 晶体管 |
| 文件： | 总4页 (文件大小：222K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors
2SD2345G
Silicon NPN epitaxial planar type
For low-frequency amplification
■ Features
■ Package
•
• High forward current transfer ratio hFE
• Low collector-emitter saturation voltage VCE(sat)
• High emitter-base voltage (Collector open) VEBO
• Low noise voltage NV
Code
SSMini3-F3
MarkinSymbol: 1Z
Pin
1: B
•
•
mitt
Colector
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
V
VCEO
VBO
IC
Rng
Unit
V
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
40
15
V
V
50
mA
mA
mW
°C
Peak collector current
ICP
10
Collector power dissipaton
Junction temperate
PC
25
Tj
125
Storage temperaure
−5to +125
°C
■ Electrical Characteristics Ta = 25°C 3°C
ter
Symbol
VCBO
VCEO
VEBO
ICBO
Conditions
Min
50
Typ
Max
Unit
V
CollectorEmitter open)
Collector-emiage (Base opn)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio *
Collector-emitter saturation voltage
Transition frequency
IC = 10 µA, IE = 0
IC = 1 mA, IB = 0
40
V
IE = 10 µA, IC = 0
VCB = 20 V, IE = 0
VCE = 20 V, IB = 0
VCE = 10 V, IC = 2 mA
15
V
100
1
nA
µA
ICEO
hFE
400
2000
0.20
VCE(sat) IC = 10 mA, IB = 1 mA
fT VB = 10 V, IE = −2 mA, f = 200 MHz
0.05
120
V
MHz
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. : Rank classification
*
Rank
R
S
T
hFE
400 to 800
600 to 1 200 1000 to 2000
Publication date: June 2007
SJC00408AED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
2SD2345G
PC Ta
IC VCE
IC VBE
150
125
100
75
160
140
120
100
80
120
100
80
60
40
0
VCE = 10 V
Ta = 25°C
25°C
Ta = 75°C
−25°C
IB = 100 µA
µA
80 A
70 µA
60 µA
A
µA
30 µA
60
50
40
20 µA
10 µA
25
20
0
0
0
20 40 60 80 100 120 140 160
0
4
8
10
1
0.4
0.8
2
1.6
2.0
(
)
Ambient temperature Ta °C
(
(
V
)
Collecto-emitter voltage VCE
Base-emitter voltage VBE
VCE(sat) IC
hFE IC
fT IE
1800
1500
120
900
300
0
100
250
200
150
100
50
VCB = 10 V
Ta = 25°C
IC / IB = 10
CE = 10 V
10
1
Ta = 75°C
25°C
−25°C
Ta = 75°C
−25
25°C
.1
0.01
0
0.1
1
10
100
1
10
100
− 0.1
−1
−10
−100
(
)
(
)
(
)
Collector current IC mA
urrenIC m
Emiter current IE mA
VCB
NV IC
NV VCE
8
7
6
5
4
3
2
1
0
100
100
80
60
40
20
0
VCE = 10 V
IE = 0
= 1 MHz
Ta = 25°C
GV = 80 dB
Function = FLAT
Ta = 25°C
Rg = 100 kΩ
80
60
40
20
0
Rg = 100 kΩ
22 kΩ
5 kΩ
22 kΩ
5 kΩ
IC = 1 mA
GV = 80 dB
Function = FLAT
Ta = 25°C
1
10
100
1
10
100
0.01
0.1
1
(
V
)
(
V
)
(
)
Collector-base voltage VCB
Collector-emitter voltage VCE
Collector current IC mA
SJC00408AED
2
This product complies with the RoHS Directive (EU 2002/95/EC).
SSMini3-F3
Unit: mm
1.60 +−00..0035
0.26 +−00..0025
3
1
2
0.13 +−00..0025
.50)
(0.5)
1.00 05
(5°
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semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
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company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
company which may arise as a result of the use of technical information described in this book.
(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
– Special applications (such as for airplanes, aerospace, automobiles, traffic contrl equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability equired, or if the failure or malfunction of the prod-
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– Any applications other than the standard applications intended.
(4) The products and product specifications described in this book re subjet to change wnotice for modification and/or im-
provement. At the final stage of your design, purchasingouse f the roducts, therfor the most up-to-date Product
Standards in advance to make sure that the latest specifictions saisfy your requirements.
(5) When designing your equipment, comply with the rnge f absolute maximuing nd the guaranteed operating conditions
(operating power supply voltage and operating nvirnt etc.). Especiallyplee be creful not to exceed the range of absolute
maximum rating on the transient state, such as powpower-off and mode-witching. Otherwise, we will not be liable for any
defect which may arise later in your equpment
Even when the products are used withthe guarnteed values, ake nto te cosideration of incidence of break down and failure
mode, possible to occur to semicuctor roducts. Mesures the syems such as redundant design, arresting the spread of fire
or preventing glitch are recomin ordeto prevent pysicainjury, fire, social damages, for example, by using the products.
(6) Comply with the instructionfor ue in rder to prevent reakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mcanical stress) at the time of handlin, mounting or at customer's process. When using products for which
damp-proof packinis reqred, satisfy the condions, suh as shelf life and the elapsed time since first opening the packages.
(7) This book may e noreprinted or repwhther wholly or partially, without the prior written permission of Matsushita
Electric ndurial Co., Ltd.
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