2SD1980TR [ROHM]
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ROHM 
2SD2195 / 2SD1980 / 2SD1867
Transistors
Power Transistor (100V, 2A)
2SD2195 / 2SD1980 / 2SD1867
zFeatures
zExternal dimensions (Unit : mm)
1) Darlington connection for high DC current gain.
2) Built-in resistor between base and emitter.
3) Built-in damper diode.
2SD2195
4.5
1.6
1.5
4) Complements the 2SB1580 / 2SB1316.
(1)
(2)
(3)
0.4
zEquivalent circuit
0.5
3.0
0.4
0.4
(1) Base
(2) Collector
(3) Emitter
1.5
1.5
C
ROHM : MPT3
EIAJ : SC-62
B
2SD1980
6.5
5.1
R1
R2
2.3
0.5
E
R
1
2
3.5kΩ
300Ω
B
C
E
: Base
: Collector
: Emitter
R
zAbsolute maximum ratings (Ta=25°C)
0.75
0.65
2.3
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Symbol
VCBO
VCEO
VEBO
Limits
100
100
6
Unit
0.9
(1)
2.3
V
V
(3)
(2)
0.5
1.0
V
(1) Base
(2) Collector
(3) Emitter
2
A(DC)
A(Pulse)
IC
ROHM : CPT3
EIAJ : SC-63
Collector current
∗1
∗2
3
0.5
2
2SD2195
Collector
W
power
PC
1
2SD1980
W(Tc=25°C)
dissipation
2SD1867
10
1
2.5
6.8
∗3
2SD1867
W
°C
°C
Junction temperature
Storage temperature
Tj
150
Tstg
−55 to +150
∗
∗
∗
1
2
3
Single pulse Pw=100ms
When mounted on a 40 x 40 x 0.7 mm ceramic board.
Printed circuit board, 1.7mm thick, collector plating 100mm2 or larger.
0.65Max.
0.5
( )
2
( )
3
( )
1
2.54
2.54
1.05
0.45
Taping specifications
(1) Emitter
(2) Collector
(3) Base
ROHM : ATV
Rev.B
1/3
2SD2195 / 2SD1980 / 2SD1867
Transistors
zPackaging specifications and hFE
Type
2SD2195
MPT3
1k to 10k
DP
2SD1980
CPT3
1k to 10k
−
2SD1867
ATV
Package
1k to 10k
hFE
Marking
Code
−
T100
TL
TV2
Basic ordering unit (pieces)
1000
2500
2500
∗
Denotes hFE
zElectrical characteristics (Ta=25°C)
Parameter
Symbol
BVCBO
BVCBO
BVEBO
Min.
100
100
6
Typ.
−
−
−
−
−
−
−
−
Max.
Unit
V
Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
−
−
−
I
I
I
C
C
E
=50µA
=5mA
=5mA
V
V
I
CBO
−
−
−
−
10
µA
mA
V
V
V
CB =100V
EB =5V
Emitter cutoff current
I
EBO
3
Collector-emitter saturation voltag
Base-Emitter saturation voltage
DC current transfer ratio
Transition frequency
VCE(sat)
1.5
2.0
10000
−
I
I
C
=1A,I
B
=1mA
/I =1A/1mA
∗
∗
V
BE(sat)
V
C
B
hFE
1000
−
MHz
V
V
V
CE =2V,I
CE =5V,I
C
E
=1A
f
T
−
−
80
=−0.1A,f=30MHz
Output capacitance
Measured using pulse current.
Cob
25
−
pF
CB =10V,I
E
=0A,f=1MHz
∗
zElectrical characteristic curves
2.0
10
5
10000
Ta=25°C
VCE=2V
Ta=25°C
5000
V
CE=4V
1.6
1.2
2
2V
2000
1000
1
C
0.5
°
0.4mA
500
C
C
°
°
25
25
0.2
0.1
Ta=100
−
200
100
0.8
0.4
0
50
0.05
0.02
20
10
0.01
0.2 0.6 1.0 1.4 1.8 2.2 2.6 3.0
BASE TO EMITTER VOLTAGE : VBE V)
0
1
2
3
4
5
0.001
0.01
0.1
1
10
(
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
COLLECTOR CURRENT : IC (A)
Fig.2 Grounded emitter propagation
characteristics
Fig.1 Grounded emitter output
characteristics
Fig.3 DC current gain vs. collector current
10000
5000
100
100
VCE=2V
Ta=25°C
IC/IB=1000
50
50
2000
1000
500
20
10
20
10
C
°
C
5
5
°
25
I
C/I
B
=1000
500
Ta=100
Ta=−25°C
C
200
100
50
2
1
2
1
°
25
25°C
−
100°C
0.5
0.2
0.5
20
0.2
0.1
100.001
0.1
0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5
1
2
5
10
0.0.1 0.0.2 0.0.5 0.1 0.2
0.5
1
2
5
10
0.0.1 0.0.2 0.0.5 0.1 0.2
0.5
1
2
5
10
COLLECTOR CURRENT : IC (A)
COLLECTOR CURRENT : IC (A)
COLLECTOR CURRENT : I
C
(
A)
Fig.4 DC current gain vs. collector current
Fig.6 Collector-emitter saturation voltage
vs.collector current
Fig.5 Collector-emitter saturation voltage
vs.collector current
Rev.B
2/3
2SD2195 / 2SD1980 / 2SD1867
Transistors
1000
500
3
10
5
Ta=25°C
∗ Single Nonrepetitive Pulse
Ta=25°C
f=1MHz
=0A
I
C
Max Pulse
Max
∗
IC Max Pulse
2
1
I
E
I
C
2
1
200
100
500m
0.5
200m
100m
50m
50
DC
0.2
0.1
20
10
20m
10m
5m
5
0.05
Ta=25°C
When mounted on a 14+ 8+ 0.8mm
glass epoxy board.
2
1
2m
1m
∗ Single Nonrepetitive
Pulse
0.1 0.2 0.5
1
2
5 10 20 50 100 200 5001000
0.1 0.2
0.5
1
2
5
10 20
50 100
1
2
5
10
CE (V)
20
50
100
COLLECTOR TO EMITTER VOLTTER
VOLTAGE :VCE (V)
COLLECTOR TO BASE VOLTAGE : VCB (V)
V
Fig.7 Collector output capacitance
vs. collector-base voltage
Fig.9 Safe operating area(2SD1867)
Fig.8 Safe operating area (2SD2195)
Rev.B
3/3
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1
相关型号：
2SD1981-AJ
Small Signal Bipolar Transistor, 2A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-226
ONSEMI
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